IRF5305STRLPBF vs IRFS4010TRLPBF 비교
다음의 상세 나란히 비교: IRF5305STRLPBF 제조: Infineon 및 IRFS4010TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF5305STRLPBF | IRFS4010TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.86 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | 180 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | — |
| RDS(on) max at VGS=-10V | 60 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | 143 nC |
| Maximum Power Dissition at Tc | 110 W | — |
| Maximum Power Dissipation at TA | 3.8 W | — |
| 패키지 | TO-263 / D2PAK (surface mount) | D2PAK (TO-263AB), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: Tj max / operating range] | — |
| Technology | HEXFET (fifth generation), IR MOSFET | IR MOSFET (HEXFET) |
| Packaging | Tape & Reel (TR), 800 pcs per reel | — |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | — | Plus or minus 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD) at TC=25C | — | 375 W |
| 동작 접합 온도 | — | -55C to +175C |
| Gate Drive Voltage | — | 10 V (normal level, optimized) |
| RoHS 상태 | — | Compliant |
| MSL 레벨 | — | 1 |
| Qualification | — | JEDEC standard |