IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon
部品番号: IRF5305STRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
IRF5305STRLPBF 概要
A P-channel power MOSFET is a voltage-controlled majority-carrier device in which the channel is formed by holes; this polarity allows it to be used as a high-side switch with a simple gate-drive referenced to ground, which simplifies driving circuits in low-voltage battery and USB power-path applications. Within the broader taxonomy, the IRF5305 belongs to the discrete-semiconductor MOSFET family, which itself sits under power transistors and ultimately under the wider power-management electronics hierarchy.
Key features include 60 mOhm R_DS(on) max at VGS = -10V, 110 W maximum power dissipation at TC, a logic-level compatible threshold that achieves low R_DS(on) at VGS = -4.5V, and a continuous drain current of -31A. The device is avalanche-rated, lead-free (Pb-free), RoHS-compliant, and supplied on 800-piece tape-and-reel. The D2PAK package provides a low thermal resistance path through the PCB drain pad, enabling high-current operation with a minimal heatsink or copper pour.
The IRF5305 uses Infineon's fifth-generation HEXFET stripe-cell planar technology, which minimizes JFET and accumulation resistance contributions to R_DS(on). The body diode exhibits a soft reverse-recovery characteristic that reduces switching losses and EMI in half-bridge and synchronous-rectifier topologies, while the ruggedized die design supports unclamped inductive switching (UIS) for motor-drive and solenoid applications.
Typical applications include battery protection and power-path management in portable and battery-powered systems, high-side load switching for motors and solenoids, DC-DC converter high-side switches, reverse-polarity protection circuits, and power-ORing for redundant supplies. The wide -55V rating also suits 24V industrial bus switching with substantial transient margin.
When designing with this device, pay attention to gate-drive voltage headroom: although R_DS(on) is specified at VGS = -10V, the device is characterized for low-side-of-spec R_DS(on) at VGS = -4.5V, allowing direct 5V microcontroller drive. Always derate continuous drain current with mounting pad area and ambient temperature using the SOA curves in the datasheet.
This page synthesizes distributor pricing, parametric comparison, and drop-in D2PAK alternatives not consolidated on the manufacturer datasheet alone.
ドロップイン代替品: IRF5305STRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF5305STRLPBF （同一形状・フットプリント） — 相違点: Package, Technology, Total Gate Charge (Qg), Drain-to-Source Voltage (VDS), FET Type.
クイック比較ツール — 並列比較する代替部品を選択:
IRF5305SPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF5305STRR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF5305STRL
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR5305TRLPBF
✅ ドロップイン✓ 在庫あり
$0.38 / 個
データシートを見る →IRF5305STRLPBF 最大定格＆電気的特性
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at TC=25C | -31 A |
| RDS(on) max at VGS=-10V | 60 mOhm |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Maximum Power Dissition at Tc | 110 W |
| Maximum Power Dissipation at TA | 3.8 W |
| パッケージ | TO-263 / D2PAK (surface mount) |
| 実装タイプ | Surface Mount |
| Technology | HEXFET (fifth generation), IR MOSFET |
| Packaging | Tape & Reel (TR), 800 pcs per reel |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) |
IRF5305STRLPBF ピン構成
| ピン 1 | Gate — Gate drive input; referenced to Source; logic-level compatible with 5V and 3.3V |
| ピン 2 | Drain — Drain terminal; electrically connected to the metal tab/back pad for heatsinking |
| ピン 3 | Source — Source terminal; reference for gate drive and return path for load current |
| ピン Tab | Drain — Back-tab metal pad connected to Drain; solder to PCB copper pour for thermal dissipation |
安全動作領域 (DC, TC=25C)
主な用途
IRF5305STRLPBF の用途: 6 件s: Battery Protection & Power-Path Management, High-Side Load Switching for Motors and Solenoids, Reverse-Polarity Protection Circuit, DC-DC Converter High-Side Switch, Power ORing for Redundant Supplies, Portable and Battery-Powered Tools.
Battery Protection & Power-Path Management
The IRF5305STRLPBF is widely used as the high-side P-channel disconnect MOSFET in single-cell and multi-cell Li-ion battery management systems, where its -55V VDS, -31A continuous drain current, and logic-level VGS(th) enable both over-current protection and reverse-polarity blocking from a 5V microcontroller GPIO. Its 60 mOhm R_DS(on) results in only 60 mV drop at 1A load and approximately 1.8V drop at 30A, preserving battery run-time in portable tools, e-bikes, and UPS modules. The D2PAK tab dissipates heat directly into the PCB copper pour, eliminating an external heatsink in compact handheld designs.
おすすめ
High-Side Load Switching for Motors and Solenoids
In 12V and 24V automotive/industrial loads, the IRF5305STRLPBF drives DC motors, solenoids, relays, and valve coils from the high side, eliminating ground-loop issues and allowing low-side current sensing with a simple shunt. Per the Infineon datasheet the device is avalanche-rated (UIS tested) and exhibits a soft-recovery body diode, both critical for inductive loads that generate back-EMF spikes when switched off. The -55V VDS rating also provides substantial transient margin against 24V bus load-dump events up to 35V.
おすすめ
Reverse-Polarity Protection Circuit
The IRF5305STRLPBF serves as an ideal reverse-polarity protection (RPP) device when placed in series with the supply rail and oriented with Source toward the load: under correct polarity the gate is pulled to ground through a resistor, fully enhancing the P-channel and dropping only I*R_DS(on). Under reversed polarity the gate-source becomes reverse biased, the MOSFET stays off, and the load is protected within microseconds. The 60 mOhm R_DS(on) is far lower than a Schottky-diode drop, improving efficiency by 3-5% in 12V systems where diode-based RPP would otherwise dissipate 0.4V x I.
おすすめ
DC-DC Converter High-Side Switch
The IRF5305STRLPBF can be used as the high-side P-channel switch in buck-derived and inverting DC-DC converter topologies where the input voltage is below 55V. Its low gate charge of approximately 42-63 nC (per distributor listings) keeps switching losses modest at frequencies up to 100 kHz, while the 110W TC-rated dissipation supports sustained operation at moderate duty cycles. The logic-level VGS(th) allows direct PWM drive from a 5V controller without a gate-driver IC.
おすすめ
Power ORing for Redundant Supplies
In redundant 12V/24V supply architectures, two IRF5305STRLPBF devices wired source-to-source form a low-loss diode-OR circuit that replaces traditional ORing Schottky diodes, reducing forward drop from ~0.4V to ~60 mV at full load and improving efficiency by 3-4% in telecom and server backplane applications. The device's -55V rating provides ample headroom above 24V nominal bus voltages with transient margin for hot-swap events.
おすすめ
Portable and Battery-Powered Tools
The IRF5305STRLPBF is a strong fit for 18V-36V cordless tools, e-bike controllers, and other portable battery-powered systems where its -55V VDS, -31A continuous ID, and logic-level VGS(th) provide direct microcontroller drive without a charge pump. The 60 mOhm R_DS(on) keeps conduction losses low enough that the device can be used on 1-2 square inches of FR4 copper without external heatsinking for typical 5-10A continuous loads.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF5305STRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF5305SPBF | IRF5305STRR | IRF5305STRL | IRFR5305TRLPBF |
|---|---|---|---|---|---|
| Package | TO-263 / D2PAK (SMT) | TO-263 / D2PAK (SMT) - same | TO-263 / D2PAK (SMT) - same | TO-263 / D2PAK (SMT) - same | D-PAK / TO-252 (smaller, NOT pin-compatible with D2PAK) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -31 A | -31 A | -31 A | -31 A | -31 A (D-PAK derates lower due to smaller tab) |
| RDS(on) max at VGS=-10V | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm |
| Total Gate Charge (Qg) | 42-63 nC (varies by distributor listing) | 42-63 nC | 42-63 nC | 42-63 nC | 42-63 nC |
| Maximum Power Dissipation at TC | 110 W | 110 W | 110 W | 110 W | 110 W (but smaller package derates power in practice) |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) | Yes | No (SnPb finish) | Yes |
| Packaging Format | Tape & Reel (left orientation) | Tube | Tape & Reel (right orientation) | Tape & Reel (non-Pb-free) | Tape & Reel (D-PAK) |
主な差別化要因
- Tape-and-reel orientation suffix (TRL vs TRR) （vs IRF5305STRR)
- Lead-free (Pb-free) finish （vs IRF5305STRL)
- Larger D2PAK thermal mass vs D-PAK （vs IRFR5305TRLPBF)
設計ノート
Estimated: at VGS=-10V, VDS=-30V, ID=-10A continuous on the D2PAK tab with a 1-square-inch FR4 copper pour (theta_JA approximately 50 C/W), the junction temperature rise above ambient is approximately 10A x 0.060 Ohm x 50 C/W = 30 C. For continuous operation above 15A, expand the PCB copper area to at least 4 square inches or attach an external heatsink to keep Tj below 150 C. The datasheet thermal-resistance curves and SOA graph must be consulted for the specific application duty cycle.
The D2PAK drain tab is electrically connected to the Drain pin; the PCB copper pad beneath the tab must be sized both for current carrying (at minimum 60 mOhm x I_load conduction loss budget) and for thermal dissipation. Use at least 2 oz copper on the drain pad and stitch thermal vias to the opposite-side ground plane. Place the gate-drive resistor (typically 10-100 ohm) within 5 mm of pin 1 to suppress parasitic-oscillation ringing during fast switching transitions.
Do not exceed VGS ratings of +/- 20V absolute maximum - use a 10V-15V Zener gate-source clamp when the gate is driven by a long cable or inductive path. For P-channel high-side switching, ensure the load is referenced between Source and ground (not Drain and ground), otherwise the gate-drive becomes non-trivial. The body diode has a modest reverse-recovery charge - if used in a half-bridge, pair with a fast-recovery or Schottky freewheel diode to minimize dead-time losses.
コンプライアンス情報
Pb-free PBF suffix confirms RoHS-compliant lead-free plating. Not AEC-Q100 qualified as standard; for automotive grade contact Infineon about IRF5305STRLPBF-A variants. Reach and conflict-mineral statements per Infineon's product compliance page.
