IRFR1018ETRPBF vs IRFR2405TRPBF 比較
詳細な並列比較: IRFR1018ETRPBF メーカー: Infineon および IRFR2405TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR1018ETRPBF | IRFR2405TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.36 | $0.61 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 79 A (Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ | — |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 46 nC | 70 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | — |
| 動作温度範囲 | -55 °C to +175 °C | — |
| パッケージ | TO-252AA (D-Pak) | TO-252AA (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| RoHS ステータス | Compliant | Compliant (Lead-Free PBF suffix) |
| Lead-Free | Yes | — |
| MSLレベル | 1 | 1 |
| Avalanche Rated | Yes | Yes (100% avalanche tested) |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 動作接合温度 | — | -55C to +175C |
| ピン数 | — | 3 (Gate, Drain, Source) + Tab |
| ハロゲンフリー | — | [DATA_NEEDED: halogen-free status] |