IRFR1018ETRPBF vs IRFR2405TRPBF 对比
详细并排对比 IRFR1018ETRPBF 出自 Infineon 和 IRFR2405TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR1018ETRPBF | IRFR2405TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.61 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 79 A (Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ | — |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 46 nC | 70 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| 封装 | TO-252AA (D-Pak) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| RoHS 状态 | Compliant | Compliant (Lead-Free PBF suffix) |
| Lead-Free | Yes | — |
| MSL 等级 | 1 | 1 |
| Avalanche Rated | Yes | Yes (100% avalanche tested) |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 工作结温 | — | -55C to +175C |
| 引脚数量 | — | 3 (Gate, Drain, Source) + Tab |
| 无卤 | — | [DATA_NEEDED: halogen-free status] |