IRFR1018ETRPBF vs IRFR2405TRPBF Comparison

Detailed side-by-side comparison of IRFR1018ETRPBF by Infineon and IRFR2405TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR1018ETRPBF IRFR2405TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-to-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 79 A (Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Rds(on) Max @ Vgs=10V 8.4 mΩ —
Rds(on) Max @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] —
Gate Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 46 nC 70 nC
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Maximum Power Dissipation (Pd) 110 W (Tc) —
Operating Temperature Range -55 °C to +175 °C —
Package TO-252AA (D-Pak) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET HEXFET (IR MOSFET)
RoHS Status Compliant Compliant (Lead-Free PBF suffix)
Lead-Free Yes —
MSL Level 1 1
Avalanche Rated Yes Yes (100% avalanche tested)
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Operating Junction Temperature — -55C to +175C
Pin Count — 3 (Gate, Drain, Source) + Tab
Halogen Free — [DATA_NEEDED: halogen-free status]

Datasheets & Resources

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