IRFS7430TRL7PP vs IRF1018EPBF 比較
詳細な並列比較: IRFS7430TRL7PP メーカー: Infineon および IRF1018EPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFS7430TRL7PP | IRF1018EPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.15 | $0.38 |
| Manufacturer | Infineon Technologies | — |
| Product Family | StrongIRFET | — |
| Series | HEXFET | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 240 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | [DATA_NEEDED: ID at Tc=100°C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: IDM pulse spec] | — |
| R_DS(on) max (V_GS=10V) | 1.2 mΩ (per family datasheet); 0.75 mΩ typical | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 3.5 V | — |
| Total Gate Charge (Q_g) | 305 nC | — |
| Power Dissipation (P_D, Tc=25°C) | 375 W | — |
| 動作接合温度 | -55°C to +175°C | — |
| パッケージ | D2PAK (TO-263-7), 7 leads + tab | TO-220AB (through-hole, 3-lead) |
| 実装タイプ | Surface Mount | Through Hole |
| Single Pulse Avalanche Energy (E_AS) | 1454 mJ (per cross-reference test L=1mH) | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | MSL1 (per PartGenie) | — |
| Technology | — | HEXFET (Power MOSFET) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 79 A |
| Rds(on) max at Vgs=10V | — | 8.4 mOhm |
| Total Gate Charge (Qg) | — | 46 nC |
| Gate Drive Voltage (Vgs) | — | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | — | 110 W |
| 動作温度範囲 | — | -55 C to +175 C (Tj) |
| Qualification | — | JEDEC (Industrial market) |
| Lead-Free (PBF suffix) | — | Yes |
| ピン数 | — | 3 (Gate, Drain, Source) |