IRFS7430TRL7PP vs IRF1018EPBF Comparison

Detailed side-by-side comparison of IRFS7430TRL7PP by Infineon and IRF1018EPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS7430TRL7PP IRF1018EPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.15 $0.38
Manufacturer Infineon Technologies β€”
Product Family StrongIRFET β€”
Series HEXFET β€”
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D, Tc=25Β°C) 240 A β€”
Continuous Drain Current (I_D, Tc=100Β°C) [DATA_NEEDED: ID at Tc=100Β°C] β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: IDM pulse spec] β€”
R_DS(on) max (V_GS=10V) 1.2 mΞ© (per family datasheet); 0.75 mΞ© typical β€”
Gate-Source Voltage (V_GS) max Β±20 V β€”
Gate Threshold Voltage (V_GS(th)) 2.0 V to 3.5 V β€”
Total Gate Charge (Q_g) 305 nC β€”
Power Dissipation (P_D, Tc=25Β°C) 375 W β€”
Operating Junction Temperature -55Β°C to +175Β°C β€”
Package D2PAK (TO-263-7), 7 leads + tab TO-220AB (through-hole, 3-lead)
Mounting Type Surface Mount Through Hole
Single Pulse Avalanche Energy (E_AS) 1454 mJ (per cross-reference test L=1mH) β€”
RoHS Status Compliant Compliant
MSL Level MSL1 (per PartGenie) β€”
Technology β€” HEXFET (Power MOSFET)
Drain-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) at Tc=25C β€” 79 A
Rds(on) max at Vgs=10V β€” 8.4 mOhm
Total Gate Charge (Qg) β€” 46 nC
Gate Drive Voltage (Vgs) β€” 10 V (optimized; +/-20 V max)
Power Dissipation (Pd) at Tc=25C β€” 110 W
Operating Temperature Range β€” -55 C to +175 C (Tj)
Qualification β€” JEDEC (Industrial market)
Lead-Free (PBF suffix) β€” Yes
Pin Count β€” 3 (Gate, Drain, Source)

Datasheets & Resources

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