IRLML6246TRPBF vs IRLML2803TRPBF 比較
詳細な並列比較: IRLML6246TRPBF メーカー: Infineon および IRLML2803TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRLML6246TRPBF | IRLML2803TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.11 | $0.13 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLML6246TRPBF | IRLML2803TRPBF |
| Technology | IR MOSFET (HEXFET Power MOSFET) | IR MOSFET Generation V |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm | — |
| On-Resistance RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg total gate charge] | — |
| Power Dissipation (Ta=25C) | 1.3 W | — |
| 動作温度範囲 | -55C to +150C (junction) | -55C to +150C (TJ) |
| パッケージ | SOT-23 (Micro3) | Micro3 / SOT-23 (3-pin) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Pb-free) | Compliant, Halogen-Free |
| ハロゲンフリー | Yes | — |
| MSLレベル | MSL1 (per JEDEC J-STD-020) | 1 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| Gate Drive Level | — | Logic-level (driven from 3.3V / 5V) |