IRLML6246TRPBF vs IRLML2803TRPBF Comparison

Detailed side-by-side comparison of IRLML6246TRPBF by Infineon and IRLML2803TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML6246TRPBF IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF βœ“ Active
Infineon
IRLML2803TRPBF IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF βœ“ Active

Specification Comparison

Parameter IRLML6246TRPBF IRLML2803TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.13
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRLML6246TRPBF IRLML2803TRPBF
Technology IR MOSFET (HEXFET Power MOSFET) IR MOSFET Generation V
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 20 V β€”
Continuous Drain Current (ID) at Ta=25C 4.1 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] β€”
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm β€”
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] β€”
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) β€”
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] β€”
Power Dissipation (Ta=25C) 1.3 W β€”
Operating Temperature Range -55C to +150C (junction) -55C to +150C (TJ)
Package SOT-23 (Micro3) Micro3 / SOT-23 (3-pin)
Mounting Type Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) Compliant, Halogen-Free
Halogen-Free Yes β€”
MSL Level MSL1 (per JEDEC J-STD-020) 1
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 1.2 A
On-Resistance RDS(on) at VGS=4.5V β€” 250 mOhm maximum
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) β€” 3.3 nC typical
Power Dissipation (PD) at TA=25C β€” 540 mW
Gate Drive Level β€” Logic-level (driven from 3.3V / 5V)

Datasheets & Resources

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