MRFE6P9220HR3 vs MRF6P9220HR3 比較
詳細な並列比較: MRFE6P9220HR3 メーカー: NXP Semiconductors および MRF6P9220HR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRFE6P9220HR3 | MRF6P9220HR3 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $232.20 | $58.40 |
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Lateral MOSFET (RF Power) |
| Technology | RF Power MOSFET | LDMOS, enhancement-mode |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | [DATA_NEEDED: efficiency at test] |
| パッケージ | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | NI-860C3 (ceramic, flange-mount) |
| Configuration | Common source, 2 elements | Common-source, single-ended |
| 実装タイプ | Surface Mount with copper heatsink pad | Surface/chassis mount (flange to heatsink) |
| 動作温度範囲 | [DATA_NEEDED: Tj max / operating range] | — |
| Lead Free Status | Lead Free | — |
| RoHS ステータス | Compliant | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF6P9220HR3 |
| Drain-Source Voltage (VDS) | — | 28 V typical |
| Typical Output Power (Pout) | — | 47 W (average, N-CDMA) |
| Power Gain (Gp) | — | 20 dB typical |
| Drain Current at Test (ID) | — | [DATA_NEEDED: drain current at Pout test] |
| Quiescent Bias Current (IDQ) | — | 1.6 A typical |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| Application | — | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | — | Enhancement mode |