MRFE6P9220HR3 vs MRF6P9220HR3 Comparação

Comparação detalhada lado a lado de MRFE6P9220HR3 por NXP Semiconductors e MRF6P9220HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRFE6P9220HR3 MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP

MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP

MRFE6P9220HR3 ✓ Ativo
NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ Ativo

Comparação de especificações

Parâmetro MRFE6P9220HR3 MRF6P9220HR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $232,20 $58,40
Tipo de transistor LDMOS, N-Channel Enhancement-Mode, Lateral N-Channel Lateral MOSFET (RF Power)
Technology RF Power MOSFET LDMOS, enhancement-mode
Frequency Range 865 MHz to 1000 MHz —
Test Frequency 880 MHz 880 MHz
Drain-Source Voltage (Vdss) Max 66 V —
Test Supply Voltage 28 V —
Test Drain Current 1.6 A —
Output Power (Avg, N-CDMA) 47 W —
Peak Output Power 200 W —
Power Gain (Typ) 20 dB at 880 MHz —
Drain Efficiency [DATA_NEEDED: typical drain efficiency % at 47 W avg] [DATA_NEEDED: efficiency at test]
Encapsulamento NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount NI-860C3 (ceramic, flange-mount)
Configuration Common source, 2 elements Common-source, single-ended
Tipo de montagem Surface Mount with copper heatsink pad Surface/chassis mount (flange to heatsink)
Faixa de temperatura de operação [DATA_NEEDED: Tj max / operating range] —
Lead Free Status Lead Free —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6P9220HR3
Drain-Source Voltage (VDS) — 28 V typical
Typical Output Power (Pout) — 47 W (average, N-CDMA)
Power Gain (Gp) — 20 dB typical
Drain Current at Test (ID) — [DATA_NEEDED: drain current at Pout test]
Quiescent Bias Current (IDQ) — 1.6 A typical
Operating Frequency Range — Up to 1000 MHz (broadband, up to ~1 GHz typical)
Application — Base-station PA, N-CDMA, industrial RF
Operating Mode — Enhancement mode

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