MRFE6P9220HR3 vs MRF6P9220HR3 비교
다음의 상세 나란히 비교: MRFE6P9220HR3 제조: NXP Semiconductors 및 MRF6P9220HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRFE6P9220HR3 | MRF6P9220HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $232.20 | $58.40 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Lateral MOSFET (RF Power) |
| Technology | RF Power MOSFET | LDMOS, enhancement-mode |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | [DATA_NEEDED: efficiency at test] |
| 패키지 | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | NI-860C3 (ceramic, flange-mount) |
| Configuration | Common source, 2 elements | Common-source, single-ended |
| 실장 유형 | Surface Mount with copper heatsink pad | Surface/chassis mount (flange to heatsink) |
| 동작 온도 범위 | [DATA_NEEDED: Tj max / operating range] | — |
| Lead Free Status | Lead Free | — |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF6P9220HR3 |
| Drain-Source Voltage (VDS) | — | 28 V typical |
| Typical Output Power (Pout) | — | 47 W (average, N-CDMA) |
| Power Gain (Gp) | — | 20 dB typical |
| Drain Current at Test (ID) | — | [DATA_NEEDED: drain current at Pout test] |
| Quiescent Bias Current (IDQ) | — | 1.6 A typical |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| Application | — | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | — | Enhancement mode |