STI38N65M5 vs IPW65R041CFD 비교
다음의 상세 나란히 비교: STI38N65M5 제조: STMicroelectronics 및 IPW65R041CFD 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ 활성
사양 비교
| 파라미터 | STI38N65M5 | IPW65R041CFD |
|---|---|---|
| 브랜드 | STMicroelectronics | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.19 | $4.68 |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at 25°C | 38 A | — |
| Continuous Drain Current (ID) at 100°C | 24 A | — |
| Pulsed Drain Current (IDM) | 152 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.099 ohm (typical) | — |
| Total Gate Charge (Qg) | 110 nC | — |
| Input Capacitance (Ciss) | 4200 pF | — |
| Output Capacitance (Coss) | 180 pF | — |
| Reverse Transfer Capacitance (Crss) | 12 pF | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| 동작 온도 범위 | -55°C to +150°C | — |
| 패키지 | TO-247 | PG-TO247-3 (TO-247, through-hole) |
| 실장 유형 | Through Hole | Through Hole |
| RoHS 상태 | Compliant | Compliant (GREEN package per digchip specification listing) |
| 할로겐 프리 | Yes | — |
| Operating Mode | — | Enhancement |
| Technology | — | CoolMOS CFD2 (superjunction, fast body diode) |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 650 V |
| On-Resistance RDS(on) | — | 41 mOhm |
| Continuous Drain Current ID | — | 68.5 A (Tc) |
| Power Dissipation PD | — | 500 W (Tc) |
| Total Gate Charge Qg | — | 300 nC |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS rating] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Thermal Resistance RthJC | — | [DATA_NEEDED: RthJC] |
| Body Diode | — | Integrated fast body diode |
| Package Color / Material | — | Green plastic (halogen-aware molding per digchip listing) |
| Application Segment | — | Industrial |