UCC21550BDWR vs UCC21521DWR 比較
詳細な並列比較: UCC21550BDWR メーカー: Texas Instruments および UCC21521DWR メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 生産中仕様比較
| パラメータ | UCC21550BDWR | UCC21521DWR |
|---|---|---|
| ブランド | Texas Instruments | Texas Instruments |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.88 | $2.15 |
| 出力構成 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| パッケージ | 16-SOIC (DW) | SOIC-16 (DW) |
| 実装タイプ | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | Compliant |
| Channel Count | — | 2 |
| Isolation Rating | — | 5700 Vrms |
| CMTI | — | 100 V/ns (minimum) |
| Propagation Delay | — | 19 ns (typical) |
| Delay Matching | — | 5 ns (maximum) |
| Pulse-Width Distortion | — | 6 ns (maximum) |
| Minimum Pulse Width | — | 10 ns |
| Max Switching Frequency | — | 5 MHz |
| Isolation Technology | — | Capacitive coupling |
| Input Threshold | — | TTL and CMOS compatible (3.3 V logic) |
| Enable / Disable Pin | — | Yes (DIS) |
| 動作温度 | — | -40C to +125C |
| Configurations | — | Dual low-side, dual high-side, or half-bridge |