UCC21550BDWR vs UCC21521DWR Vergleich

Detaillierter Direktvergleich von UCC21550BDWR von Texas Instruments und UCC21521DWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550BDWR UCC21521DWR
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,88 $2,15
Ausgangskonfiguration Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms —
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes —
Junction Temperature Range -40 C to +150 C —
Gehäuse 16-SOIC (DW) SOIC-16 (DW)
Montageart Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
Channel Count — 2
Isolation Rating — 5700 Vrms
CMTI — 100 V/ns (minimum)
Propagation Delay — 19 ns (typical)
Delay Matching — 5 ns (maximum)
Pulse-Width Distortion — 6 ns (maximum)
Minimum Pulse Width — 10 ns
Max Switching Frequency — 5 MHz
Isolation Technology — Capacitive coupling
Input Threshold — TTL and CMOS compatible (3.3 V logic)
Enable / Disable Pin — Yes (DIS)
Betriebstemperatur — -40C to +125C
Configurations — Dual low-side, dual high-side, or half-bridge

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