UCC21550BDWR vs UCC21521DWR 对比
详细并排对比 UCC21550BDWR 出自 Texas Instruments 和 UCC21521DWR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 量产中规格对比
| 参数 | UCC21550BDWR | UCC21521DWR |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $2.15 |
| 输出配置 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| 封装 | 16-SOIC (DW) | SOIC-16 (DW) |
| 安装类型 | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Channel Count | — | 2 |
| Isolation Rating | — | 5700 Vrms |
| CMTI | — | 100 V/ns (minimum) |
| Propagation Delay | — | 19 ns (typical) |
| Delay Matching | — | 5 ns (maximum) |
| Pulse-Width Distortion | — | 6 ns (maximum) |
| Minimum Pulse Width | — | 10 ns |
| Max Switching Frequency | — | 5 MHz |
| Isolation Technology | — | Capacitive coupling |
| Input Threshold | — | TTL and CMOS compatible (3.3 V logic) |
| Enable / Disable Pin | — | Yes (DIS) |
| 工作温度 | — | -40C to +125C |
| Configurations | — | Dual low-side, dual high-side, or half-bridge |