UCC21550BDWR vs UCC21521DWR 비교
다음의 상세 나란히 비교: UCC21550BDWR 제조: Texas Instruments 및 UCC21521DWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 활성사양 비교
| 파라미터 | UCC21550BDWR | UCC21521DWR |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.88 | $2.15 |
| 출력 구성 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| 패키지 | 16-SOIC (DW) | SOIC-16 (DW) |
| 실장 유형 | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Channel Count | — | 2 |
| Isolation Rating | — | 5700 Vrms |
| CMTI | — | 100 V/ns (minimum) |
| Propagation Delay | — | 19 ns (typical) |
| Delay Matching | — | 5 ns (maximum) |
| Pulse-Width Distortion | — | 6 ns (maximum) |
| Minimum Pulse Width | — | 10 ns |
| Max Switching Frequency | — | 5 MHz |
| Isolation Technology | — | Capacitive coupling |
| Input Threshold | — | TTL and CMOS compatible (3.3 V logic) |
| Enable / Disable Pin | — | Yes (DIS) |
| 동작 온도 | — | -40C to +125C |
| Configurations | — | Dual low-side, dual high-side, or half-bridge |