UCC21550BDWR vs UCC21710QDWRQ1 比較
詳細な並列比較: UCC21550BDWR メーカー: Texas Instruments および UCC21710QDWRQ1 メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 生産中
仕様比較
| パラメータ | UCC21550BDWR | UCC21710QDWRQ1 |
|---|---|---|
| ブランド | Texas Instruments | Texas Instruments |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.88 | $2.74 |
| 出力構成 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | +10 A |
| Peak Sink Current | 6 A | -10 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| パッケージ | 16-SOIC (DW) | 16-SOIC (DW) wide-body |
| 実装タイプ | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | — |
| 機能 | — | Single-channel isolated gate driver |
| Isolation Technology | — | SiO2 capacitive coupling |
| Isolation Rating (rms) | — | 5.7 kVrms (reinforced) |
| Working Voltage (rms) | — | 1.5 kVrms |
| Target Switches | — | SiC MOSFETs up to 1700 V, IGBTs |
| Propagation Delay (typ.) | — | 60 ns |
| CMTI (min.) | — | 100 V/ns |
| Output Supply Voltage (VCC2/VEE2) | — | 12.8 V to 18 V |
| Input Supply Voltage (VDD/VCCI) | — | 3 V to 5.5 V |
| Protection Features | — | DESAT, Miller clamp, UVLO, FLT, soft turn-off |
| 動作温度範囲 | — | -40 C to +150 C |
| Automotive Qualification | — | AEC-Q100 |
| RoHS | — | Compliant |