UCC21550BDWR vs UCC21710QDWRQ1 对比
详细并排对比 UCC21550BDWR 出自 Texas Instruments 和 UCC21710QDWRQ1 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 量产中
规格对比
| 参数 | UCC21550BDWR | UCC21710QDWRQ1 |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $2.74 |
| 输出配置 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | +10 A |
| Peak Sink Current | 6 A | -10 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| 封装 | 16-SOIC (DW) | 16-SOIC (DW) wide-body |
| 安装类型 | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| 功能 | — | Single-channel isolated gate driver |
| Isolation Technology | — | SiO2 capacitive coupling |
| Isolation Rating (rms) | — | 5.7 kVrms (reinforced) |
| Working Voltage (rms) | — | 1.5 kVrms |
| Target Switches | — | SiC MOSFETs up to 1700 V, IGBTs |
| Propagation Delay (typ.) | — | 60 ns |
| CMTI (min.) | — | 100 V/ns |
| Output Supply Voltage (VCC2/VEE2) | — | 12.8 V to 18 V |
| Input Supply Voltage (VDD/VCCI) | — | 3 V to 5.5 V |
| Protection Features | — | DESAT, Miller clamp, UVLO, FLT, soft turn-off |
| 工作温度范围 | — | -40 C to +150 C |
| Automotive Qualification | — | AEC-Q100 |
| RoHS | — | Compliant |