UCC21550BDWR vs UCC21710QDWRQ1 비교
다음의 상세 나란히 비교: UCC21550BDWR 제조: Texas Instruments 및 UCC21710QDWRQ1 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 활성
사양 비교
| 파라미터 | UCC21550BDWR | UCC21710QDWRQ1 |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.88 | $2.74 |
| 출력 구성 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | +10 A |
| Peak Sink Current | 6 A | -10 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| 패키지 | 16-SOIC (DW) | 16-SOIC (DW) wide-body |
| 실장 유형 | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | — |
| 기능 | — | Single-channel isolated gate driver |
| Isolation Technology | — | SiO2 capacitive coupling |
| Isolation Rating (rms) | — | 5.7 kVrms (reinforced) |
| Working Voltage (rms) | — | 1.5 kVrms |
| Target Switches | — | SiC MOSFETs up to 1700 V, IGBTs |
| Propagation Delay (typ.) | — | 60 ns |
| CMTI (min.) | — | 100 V/ns |
| Output Supply Voltage (VCC2/VEE2) | — | 12.8 V to 18 V |
| Input Supply Voltage (VDD/VCCI) | — | 3 V to 5.5 V |
| Protection Features | — | DESAT, Miller clamp, UVLO, FLT, soft turn-off |
| 동작 온도 범위 | — | -40 C to +150 C |
| Automotive Qualification | — | AEC-Q100 |
| RoHS | — | Compliant |