UCC21550BDWR vs UCC21710QDWRQ1 Vergleich

Detaillierter Direktvergleich von UCC21550BDWR von Texas Instruments und UCC21710QDWRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550BDWR UCC21710QDWRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,88 $2,74
Ausgangskonfiguration Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A +10 A
Peak Sink Current 6 A -10 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms —
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes —
Junction Temperature Range -40 C to +150 C —
Gehäuse 16-SOIC (DW) 16-SOIC (DW) wide-body
Montageart Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
RoHS-Status [DATA_NEEDED: RoHS status] —
Funktion — Single-channel isolated gate driver
Isolation Technology — SiO2 capacitive coupling
Isolation Rating (rms) — 5.7 kVrms (reinforced)
Working Voltage (rms) — 1.5 kVrms
Target Switches — SiC MOSFETs up to 1700 V, IGBTs
Propagation Delay (typ.) — 60 ns
CMTI (min.) — 100 V/ns
Output Supply Voltage (VCC2/VEE2) — 12.8 V to 18 V
Input Supply Voltage (VDD/VCCI) — 3 V to 5.5 V
Protection Features — DESAT, Miller clamp, UVLO, FLT, soft turn-off
Betriebstemperaturbereich — -40 C to +150 C
Automotive Qualification — AEC-Q100
RoHS — Compliant

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