1N5711SB - 70V 15mA Schottky Diode DO-35 | STMicroelectronics
部品番号: 1N5711SB ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.34 | $3.40 |
| 100 | $0.21 | $21.00 |
| 500 | $0.15 | $75.00 |
| 1,000 | $0.11 | $110.00 |
1N5711SB 概要
A Schottky barrier diode is a semiconductor rectifier formed by a metal-to-silicon junction rather than a conventional P-N junction. Because majority-carrier conduction dominates, the device switches extremely quickly and exhibits a lower forward voltage than an equivalent silicon P-N diode, classifying it within the broader family of small-signal diodes, rectifiers, and discrete semiconductors used across power, RF, and logic subsystems.
Key features include the 70 V peak reverse voltage, ultrafast switching speed with essentially zero reverse recovery time, low turn-on voltage, and a broad dynamic range suitable for high-level signal detection. The hermetically sealed glass body provides long-term reliability in humid or otherwise harsh environments, and matched batches are available from ST on request for applications needing paired V-I characteristics.
The metal-semiconductor junction is primarily optimized for high-level UHF/VHF detection and pulse applications. With low junction capacitance and fast charge extraction, the diode operates as a detector, mixer, and low-power switch well into the VHF/UHF bands, and functions in pulse shaping, sampling gates, and fast logic circuits per the MACOM and ST application descriptions.
Typical applications include RF envelope detection in narrow-band receivers, UHF/VHF pulse shaping and sampling networks, low-level mixing, and general-purpose high-speed small-signal switching in instrumentation.
In design, respect the 15 mA forward current and 430 mW dissipation limits; derate power above 25 C ambient and provide adequate lead length for heat conduction since the glass DO-35 package has no dedicated thermal pad.
This page synthesizes distributor pricing, drop-in cross-references, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: 1N5711SB — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 1N5711SB （同一形状・フットプリント） — 相違点: Diode Type, Package, Mounting Type, Power Dissipation, Reverse Recovery Time.
クイック比較ツール — 並列比較する代替部品を選択:
1N5711
✅ ドロップイン✓ 在庫あり
$0.18 / 個
データシートを見る →1N5711
✅ ドロップイン✓ 在庫あり
$0.18 / 個
データシートを見る →1N5711
✅ ドロップイン✓ 在庫あり
$0.18 / 個
データシートを見る →1N5711
✅ ドロップイン✓ 在庫あり
$0.18 / 個
データシートを見る →1N6263
✅ ドロップイン✓ 在庫あり
$0.12 / 個
データシートを見る →1N5711SB 最大定格＆電気的特性
| Diode Type | Small Signal Schottky Barrier Diode |
| Peak Reverse Voltage (VRRM) | 70 V |
| Average Forward Current (IF(AV)) | 15 mA |
| Power Dissipation | 430 mW |
| Reverse Recovery Time | Ultrafast (Schottky, no stored charge) |
| Configuration | Single |
| パッケージ | DO-35 (SOD-27) hermetic glass axial |
| 実装タイプ | Through Hole |
| Junction Material | Metal-to-silicon junction |
| Primary Applications | UHF/VHF detection, mixing, switching, pulse shaping |
| Matched Batches | Available on request (ST) |
1N5711SB ピン構成
| ピン 1 | Cathode — Cathode lead - marked by the band on the glass body |
| ピン 2 | Anode — Anode lead - current enters here in forward conduction |
主な用途
1N5711SB の用途: 6 件s: UHF/VHF Signal Detection, RF Mixing and Frequency Conversion, Fast Pulse Shaping and Sampling Gates, Low-Level Switching in Narrow-Band Receivers, General-Purpose High-Speed Small-Signal Switching, RF Test and Measurement Probes.
UHF/VHF Signal Detection
The 1N5711SB fits RF envelope and level detection circuits because its metal-to-silicon Schottky junction provides a low turn-on voltage and negligible stored charge, enabling rectification of small UHF/VHF signals with broad dynamic range. Per the ST datasheet, the part is primarily intended for high-level UHF/VHF detection with matched batches available for paired detectors. In a typical half-wave detector, the diode feeds an RC load (for example 1 kOhm and 10 nF) whose time constant is long compared to the RF period, extracting the envelope. The 70 V rating provides headroom against receiver front-end transients, while the low capacitance minimizes loading of the tuned circuit.
おすすめ
RF Mixing and Frequency Conversion
Schottky diodes such as the 1N5711SB serve as the nonlinear mixing element in passive single-diode and diode-ring mixers for VHF/UHF receivers. The metal-semiconductor junction switches at the LO rate with essentially zero reverse recovery, producing clean harmonic content for frequency conversion at low LO power. MACOM's application description for the 1N5711 explicitly lists mixing at low power levels as a primary use in narrow-band receivers. With 15 mA average current capability and 430 mW dissipation, the diode tolerates typical small-signal mixer drive levels, while its low junction capacitance preserves IF bandwidth and port isolation across the VHF/UHF range.
おすすめ
Fast Pulse Shaping and Sampling Gates
In pulse circuitry, the 1N5711SB performs pulse shaping, sampling-gate clamping, and level shifting where transition times must stay in the nanosecond range. Because Schottky majority-carrier conduction stores no minority charge, the diode turns off instantly with no reverse-recovery tail - a decisive advantage over P-N switching diodes in sampling bridges and fast logic gates, as documented in the MACOM 1N5711 application description for UHF/VHF pulse shaping, sampling, and fast logic. The hermetic DO-35 glass body also withstands the repetitive peak currents of gate drive circuits within the 430 mW package dissipation limit, making it a reliable choice for test instrumentation front ends.
おすすめ
Low-Level Switching in Narrow-Band Receivers
Narrow-band receiver front ends and AGC paths use the 1N5711SB as a low-power RF switch and detector-combiner. Its low forward turn-on voltage minimizes signal loss in passive switching configurations, and the 70 V breakdown gives robust ESD and overload tolerance relative to the small signals involved. Both ST and MACOM describe the 1N5711 family as suitable for commercial switching and control functions in narrow-band receivers. Matched batches available on request from ST allow designers to build balanced switching or detector pairs with closely tracked V-I curves, improving carrier suppression and detector linearity across temperature in communication equipment.
おすすめ
General-Purpose High-Speed Small-Signal Switching
Beyond RF, the 1N5711SB works as an ultrafast general-purpose small-signal rectifier and clamp in instrumentation, test fixtures, and through-hole prototyping where the rugged DO-35 axial body simplifies hand assembly. The Diodes Incorporated cross-listed datasheet describes the same registered part as a Schottky barrier switching diode, and Microchip's DO-204AH version raises the current rating to 33 mA for slightly heavier loads. Reverse recovery is effectively zero, so the diode suits freewheeling and polarity-protection roles on fast digital or analog lines, provided the 15 mA average current and 70 V reverse limits of the SB suffix are respected in the design.
おすすめ
RF Test and Measurement Probes
DIY and production RF probes, field-strength meters, and power detectors commonly use a 1N5711-class Schottky as the rectifying element feeding a sensitive DC voltmeter or instrumentation amplifier. The diode's low barrier lets it respond to signals of only a few hundred millivolts, and its low capacitance keeps probe loading below a picofarad-class value when combined with a series resistor. MACOM and ST both position the 1N5711 for detection and measurement in the UHF/VHF bands. The axial glass package allows direct soldering to probe tips and ground rings, and matched batches from ST improve accuracy in dual-diode compensated detector designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 1N5711SB — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 1N5711 (ST) | 1N5711 (Diodes Inc) | 1N5711 (Microchip) | 1N5711UR-1 (Microchip) |
|---|---|---|---|---|---|
| Package | DO-35 (SOD-27) axial glass | DO-35 (SOD-27) - same | DO-35 - same | DO-204AH (DO-35) - same footprint | DO-213AA MELF - different (SMD) |
| Brand | STMicroelectronics | STMicroelectronics | Diodes Incorporated | Microchip Technology | MACOM Technology Solutions |
| Diode Technology | Schottky barrier (metal-silicon) | Schottky barrier | Schottky barrier switching | Schottky | Silicon Schottky, hermetic glass |
| Reverse Recovery | Ultrafast (no stored charge) | Ultrafast | Ultrafast | Ultrafast | Ultrafast |
| Primary Application Focus | UHF/VHF detection, pulse applications | High-level UHF/VHF detection | General high-speed switching | General switching, higher current | Detecting, mixing, switching in UHF/VHF |
| Mounting Type | Through Hole (axial) | Through Hole | Through Hole | Through Hole | Surface Mount (MELF) |
主な差別化要因
- Hermetic glass DO-35 package for harsh environments （vs 1N5711UR-1 (Microchip))
- Optimized for high-level UHF/VHF detection （vs 1N5711 (Diodes Inc))
- Higher current headroom available in family （vs 1N5711 (ST base))
設計ノート
Respect the two hard limits of this part: 70 V peak reverse voltage and 15 mA average forward current (430 mW dissipation). In resonant or poorly terminated RF circuits, reverse ringing can exceed the DC supply voltage by a large factor - measure or simulate worst-case reverse stress, and add a small series resistor or margin-rated diode if ringing approaches the breakdown region. Also remember that Schottky leakage rises strongly with temperature; leakage that is negligible at 25 C can shift detector bias points at 85 C ambient.
Keep detector loops short. In a UHF/VHF envelope detector, the diode's cathode lead, load capacitor, and ground return form the RF loop; long leads add inductance that resonates with the load capacitance and distorts detection above a few hundred megahertz. Cut DO-35 leads to the minimum practical length, orient the body away from strong RF fields, and use a disc ceramic load capacitor (e.g. 1-10 nF) soldered directly across the diode output and ground for the cleanest envelope reproduction.
Estimated: at rated IF(AV) = 15 mA and a typical Schottky VF of roughly 0.3-0.4 V (verify against the ST datasheet curve), conduction loss is only about 4.5-6 mW - far below the 430 mW rating, so small-signal detector duty rarely stresses the part thermally. The derating concerns instead arise in pulse or clamp duty with repetitive peak currents; calculate average power as VF times duty-cycle-weighted current and keep it under 430 mW at 25 C free air, derating linearly at higher ambient temperatures per the manufacturer datasheet.
コンプライアンス情報
Compliance data was not present in the provided web data for the 1N5711SB suffix; verify RoHS/REACH status on the ST product page for the exact ordering code before procurement.
