2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon
部品番号: 2ED2304S06FXUMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.79 | $790.00 |
| 3,000 | $0.66 | $1,980.00 |
2ED2304S06FXUMA1 概要
A gate driver is a power-management IC that sits between a low-voltage control signal (microcontroller, PWM controller, or logic) and the gate of a high-voltage power switch. The 2ED2304S06F belongs to the half-bridge gate driver category, meaning it contains both a high-side and a low-side driver plus level-shifting logic so that a single logic input pair can control a phase leg in a totem-pole or half-bridge topology. Compared with discrete opto-coupled or transformer drivers, monolithic half-bridge ICs reduce BOM count, propagation delay mismatch, and PCB area in switch-mode power supplies, motor drives, and lighting.
Key features include 650 V absolute maximum blocking voltage on the high-side driver, integrated bootstrap diode to remove an external discrete, Schmitt-trigger CMOS/LSTTL inputs compatible down to 3.3 V, built-in dead-time and interlock logic to prevent shoot-through, and matched propagation delays of approximately 200 ns for symmetric switching. The 2ED2304S06F is also specified for VCC operation from 10 V to 17 V with undervoltage lockout (UVLO) on both the low-side VCC and the high-side VB-VS rail.
The thin-film-SOI process enables negative VS transients (typical of motor-drive back-EMF events) to be tolerated without latch-up, a recurring failure mechanism in older junction-isolated drivers. The integrated BSD replaces an external high-voltage diode plus resistor, simplifying the bootstrap supply for the high-side. Typical applications for the 2ED2304S06FXUMA1 include small home appliances (fan, pump, and induction-cooking drives), low-power motor drives, switched-mode power supplies (SMPS) up to a few hundred watts, and solid-state relay (SSR) output stages.
Designers should verify that the chosen MOSFET or IGBT total gate charge Qg remains below the driver's source/sink capability at the intended switching frequency so that rise and fall times stay within target EMI margins. Bootstrap capacitor sizing, dead-time selection, and gate-resistor tuning are the three primary design tasks when using this driver in a half-bridge topology.
This page consolidates distributor pricing, drop-in same-package alternatives, and practical PCB design notes that go beyond what appears in the manufacturer datasheet, giving engineers a single reference for sourcing and applying the 2ED2304S06FXUMA1.
ドロップイン代替品: 2ED2304S06FXUMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 2ED2304S06FXUMA1 （同一形状・フットプリント） — 相違点: Package, Input Logic Compatibility, RoHS Status, Technology, Bootstrap Diode.
クイック比較ツール — 並列比較する代替部品を選択:
IR2304SPBF
✅ ドロップイン✓ 在庫あり
$0.48 / 個
データシートを見る →2ED2304S06FXUMA2
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2ED21064S06JXUMA1
✅ ドロップイン✓ 在庫あり
$0.85 / 個
データシートを見る →IR2109SPBF
✅ ドロップイン✓ 在庫あり
$1.05 / 個
データシートを見る →2ED2304S06FXUMA1 最大定格＆電気的特性
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Technology | Infineon thin-film SOI |
| Blocking Voltage (High-Side) | 650 V |
| Source Current (typ.) | 0.36 A |
| Sink Current (typ.) | 0.7 A |
| Input Logic Compatibility | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| VCC Supply Range | 10 V to 17 V |
| Bootstrap Diode | Integrated (BSD) |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | Built-in |
| Propagation Delay (typ.) | 200 ns |
| 動作温度範囲 | -40C to +125C |
| パッケージ | PG-DSO-8-910 (DSO-8) |
| 実装タイプ | Surface Mount |
| MSLレベル | 2 |
| RoHS ステータス | Compliant |
2ED2304S06FXUMA1 ピン構成
| ピン 1 | VCC — Low-side and logic supply (10 V to 17 V) |
| ピン 2 | HIN — High-side logic input (Schmitt-trigger, 3.3 V compatible) |
| ピン 3 | LIN — Low-side logic input (Schmitt-trigger, 3.3 V compatible) |
| ピン 4 | COM — Low-side return / ground |
| ピン 5 | LO — Low-side gate drive output |
| ピン 6 | VS — High-side floating supply return |
| ピン 7 | HO — High-side gate drive output |
| ピン 8 | VB — High-side floating supply (bootstrap) |
主な用途
2ED2304S06FXUMA1 の用途: 6 件s: Small Home Appliance Motor Drives, Switched-Mode Power Supplies (SMPS), Solid-State Relay (SSR) Output Stages, Induction Heating Cooktops, PFC + Half-Bridge Converter Stages, Solar Micro-Inverters and Power Optimizers.
Small Home Appliance Motor Drives
The 2ED2304S06FXUMA1's 650 V blocking rating and 0.36 A/0.7 A source/sink drive directly support small-motor half-bridge drives used in kitchen appliances such as induction cookers, blenders, and washing-machine pumps. Its integrated bootstrap diode removes an external high-voltage rectifier, simplifying the BOM for cost-sensitive appliance designs. Compared with discrete opto-driver solutions, the SOI technology tolerates VS-node transients during motor back-EMF commutation without latch-up, improving field reliability in appliances subjected to inductive kickback.
おすすめ
Switched-Mode Power Supplies (SMPS)
The 2ED2304S06FXUMA1 is well matched to half-bridge SMPS topologies up to several hundred watts, including telecom bricks, LED TV power stages, and industrial DC-DC converters. The integrated BSD saves an external high-voltage diode on the floating supply rail, while 200 ns typical propagation delay supports switching frequencies in the 50-200 kHz range. For higher-power designs requiring stronger gate drive, the same DSO-8 footprint accepts the 2ED21064S06JXUMA1 family member without PCB rework.
おすすめ
Solid-State Relay (SSR) Output Stages
In solid-state relay designs, the 2ED2304S06FXUMA1 drives two back-to-back MOSFETs or a TRIAC, replacing electromechanical relays with a long-life, silent, fast-switching alternative. The 650 V blocking rating covers 230 VAC mains, and the integrated bootstrap diode simplifies the high-side drive for AC zero-cross or random-fire switching. Schmitt-trigger 3.3 V inputs interface directly to microcontrollers and optocouplers, simplifying the SSR front end.
おすすめ
Induction Heating Cooktops
Induction-cooking resonant converters operate at high bus voltages with hard-switched half-bridge legs, demanding a 650 V-capable driver with negative transient immunity. The 2ED2304S06FXUMA1's SOI process survives VS-node excursions typical of resonant tank ringing, while the built-in interlock logic prevents shoot-through that would otherwise destroy the IGBTs. The PG-DSO-8 package keeps the driver close to the switching devices, minimizing gate-loop inductance.
おすすめ
PFC + Half-Bridge Converter Stages
Two-stage converters often pair a PFC front-end with a half-bridge LLC or phase-shift stage, where the 2ED2304S06FXUMA1 drives the half-bridge primary side. The integrated BSD simplifies the high-side floating supply, and the VCC UVLO protects the half-bridge from low-voltage startup glitches. Designers can use the same driver across 100 W to 500 W converter platforms by changing only the power MOSFETs.
おすすめ
Solar Micro-Inverters and Power Optimizers
Module-level solar electronics such as micro-inverters and DC power optimizers use compact half-bridge stages driven by the 2ED2304S06FXUMA1. The 650 V rating supports 400-600 VDC link voltages typical of single-phase solar micro-inverter designs, while the integrated BSD and small PG-DSO-8 package keep board area low. Negative VS transient immunity is critical in solar systems where long DC cables inject ringing onto the switching node.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2ED2304S06FXUMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IR2304SPBF | 2ED2304S06FXUMA2 | 2ED21064S06JXUMA1 | IR2109SPBF |
|---|---|---|---|---|---|
| Package | PG-DSO-8-910 | PG-DSO-8 - same | PG-DSO-8-910 - same | DSO-8 - same family | SOIC-8 / PDIP-8 - same family |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Blocking Voltage | 650 V | 600 V | 650 V | 650 V | 600 V |
| Source Current | 0.36 A | 0.18 A | 0.36 A | 0.55 A | 0.12 A |
| Sink Current | 0.7 A | 0.35 A | 0.7 A | 1.0 A | 0.25 A |
| Integrated Bootstrap Diode | Yes | No | Yes | Yes | No |
| Technology | SOI | Junction-isolated | SOI | SOI | Junction-isolated |
| Propagation Delay (typ.) | 200 ns | 220 ns | 200 ns | 180 ns | 220 ns |
主な差別化要因
- Integrated bootstrap diode eliminates one external HV diode （vs IR2304SPBF)
- SOI process tolerates negative VS transients （vs IR2304SPBF)
- Asymmetric source/sink drive (0.36 A / 0.7 A) （vs 2ED21064S06JXUMA1)
設計ノート
Estimated: At 100 kHz switching with Qg = 50 nC total gate charge, the 2ED2304S06FXUMA1 drives 0.36 A x 17 V average for turn-on, drawing 5 mA from VCC per switching cycle and roughly 0.5 W total from VCC at full duty cycle. Size the bootstrap capacitor with C_boot > Qg / (delta V_boot), typically 100 nF to 1 uF ceramic for Qg up to 100 nC. Confirm VCC decoupling with at least 1 uF X7R within 5 mm of pin 1.
Keep the gate-drive loop (HO-VS-HO_HC and LO-COM-LO_HC) area below 1 cm^2 to limit parasitic inductance; a high dV/dt half-bridge node can otherwise induce ringing above the driver's absolute maximum VS rating. Place the bootstrap capacitor CB between VB and VS with traces shorter than 5 mm, and return VS directly to the switch-node Kelvin source rather than power ground.
Do not float the high-side driver without initializing the bootstrap capacitor before applying the first switching pulse; failure to pre-charge CB through a startup pulse can leave the high-side unpowered and create shoot-through. Also note that the integrated BSD requires a minimum 1 uF bypass on VB; values below 100 nF can cause UVLO retriggering under load steps.
The PG-DSO-8-910 package has a typical theta_JA of 150 C/W on a 1-oz two-layer JEDEC EIA/JESD51 board. At 0.5 W dissipation (CCM half-bridge at 100 kHz, 0.5 A drive current), junction rise is approximately 75 C above ambient - well within the 150 C maximum. For continuous high-frequency operation, recommend a thermal via array under the exposed pad to spread heat.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. Industrial grade only - not AEC-Q100 qualified for automotive. For automotive half-bridge drivers from Infineon, refer to the EiceDRIVER automotive family.
