BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
部品番号: BSC109N10NS3GATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.45 | $145.00 |
| 500 | $1.28 | $640.00 |
| 1,000 | $1.12 | $1,120.00 |
| 3,000 | $0.95 | $2,850.00 |
BSC109N10NS3GATMA1 概要
A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-source voltage is applied, and it is the fundamental building block of switched-mode power supplies (SMPS), motor drives, and DC-DC converters. In the broader taxonomy, power MOSFETs belong to discrete semiconductors, which sit under the wider power management ecosystem alongside gate drivers, voltage regulators, and supervisors. The OptiMOS 3 platform specifically targets high-efficiency telecom, server, and industrial SMPS designs where low conduction and switching losses translate directly into improved power-supply efficiency, denser PCB layouts, and reduced cooling requirements.
Key features of the BSC109N10NS3GATMA1 include ultra-low RDS(on) of 10.9 mOhm maximum at 10 V VGS, a 100 V VDS rating suitable for 48 V telecom bus and 60 V industrial bus rails, and an avalanche-rated single-pulse body diode for inductive switching robustness. The 78 W power dissipation envelope (Tc) supports high-current operation, while the SuperSO8 5x6 mm package provides a low thermal resistance path to the PCB copper pour, enabling compact high-density designs.
Typical applications include synchronous rectification in 48 V server and telecom isolated DC-DC converters, primary-side switching in industrial SMPS, motor drive H-bridges for 24-48 V brushless DC systems, hot-swap and OR-ing controllers, and battery protection circuits in e-mobility and energy storage. When designing with this MOSFET, careful attention to gate-drive voltage, dead-time, and PCB thermal layout is required to fully realize its efficiency potential.
ドロップイン代替品: BSC109N10NS3GATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSC109N10NS3GATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, MSL Level, Operating Temperature Range, Drain-Source Voltage (VDS).
クイック比較ツール — 並列比較する代替部品を選択:
BSC12DN20NS3GATMA1
✅ ドロップイン✓ 在庫あり
$0.61 / 個
データシートを見る →IPB35N10S3L26ATMA1
✅ ドロップイン✓ 在庫あり
$1.15 / 個
データシートを見る →BSC019N08NS5ATMA1
✅ ドロップイン✓ 在庫あり
$1.78 / 個
データシートを見る →ISZ230N10NM6ATMA1
✅ ドロップイン✓ 在庫あり
$0.71 / 個
データシートを見る →BSC109N10NS3GATMA1 最大定格＆電気的特性
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 63 A |
| Power Dissipation (PD, Tc) | 78 W |
| RDS(on) Max | 10.9 mOhm at VGS=10 V |
| Technology | OptiMOS 3 |
| パッケージ | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount |
| Gate Charge (Qg) | 26 nC |
| 動作温度範囲 | -55C to +175C |
| ピン数 | 8 |
| RoHS ステータス | Compliant |
| Avalanche Energy Rated | Yes |
| Lead-Free | Yes |
BSC109N10NS3GATMA1 ピン構成
| ピン 1 | Source — Source terminal (connected to exposed pad) |
| ピン 2 | Source — Source terminal (connected to exposed pad) |
| ピン 3 | Source — Source terminal (connected to exposed pad) |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Drain — Drain terminal |
| ピン 6 | Drain — Drain terminal |
| ピン 7 | Drain — Drain terminal |
| ピン 8 | Drain — Drain terminal |
安全動作領域 (DC)
主な用途
BSC109N10NS3GATMA1 の用途: 6 件s: 48V Telecom Synchronous Rectification, Industrial SMPS Primary-Side Switch, 24-48V Brushless DC Motor Drive, Hot-Swap and OR-ing Controllers, Battery Protection in E-Mobility, Solar Inverter DC-DC Stage.
48V Telecom Synchronous Rectification
The BSC109N10NS3GATMA1 is well suited as the synchronous rectifier MOSFET on the secondary side of 48 V telecom isolated DC-DC converters, where its 100 V VDS rating comfortably exceeds the rectified 48 V bus and its 10.9 mOhm RDS(on) minimizes conduction loss. In a typical 600 W half-bridge converter switching at 100-200 kHz, the synchronous FET handles 20-40 A RMS, and the low gate charge of 26 nC reduces driver losses. Compared to using a Schottky diode, synchronous rectification with this MOSFET typically improves efficiency by 3-5 percent, directly reducing heatsink requirements.
おすすめ
Industrial SMPS Primary-Side Switch
In industrial switch-mode power supplies operating from 24 V or 48 V buses, the BSC109N10NS3GATMA1 serves as the primary-side high-side or low-side switch in hard-switched half-bridge and full-bridge topologies. The 100 V breakdown provides ample margin above the bus voltage plus transformer reflected stress, and the 78 W power dissipation envelope supports continuous operation at high duty cycles. The SuperSO8 5x6 mm footprint enables compact industrial PSU designs where PCB area is constrained, and the low RDS(on) keeps conduction loss manageable at 10-20 A continuous primary currents.
おすすめ
24-48V Brushless DC Motor Drive
The BSC109N10NS3GATMA1 is a strong candidate for the H-bridge switches in 24 V or 48 V brushless DC (BLDC) motor drive modules used in e-bikes, robotic actuators, and small industrial drives. With 63 A continuous current capability, it comfortably drives motors up to 2-3 kW at the lower bus voltages. Its low RDS(on) of 10.9 mOhm minimizes I2R losses during high-current torque phases, improving battery runtime in portable applications. The avalanche rating provides robustness against the inductive kickback from motor winding inductance when PWM-switching at 20-50 kHz.
おすすめ
Hot-Swap and OR-ing Controllers
The BSC109N10NS3GATMA1 functions as the pass element in 48 V hot-swap and OR-ing circuits used in server and telecom shelves for live-insertion and redundant power supply sharing. Its 100 V rating tolerates 48 V nominal plus transient spikes from load steps and inductive back-EMF, while the 63 A continuous current capability supports high-power server blades and switch fabrics. The low RDS(on) of 10.9 mOhm keeps the forward voltage drop low even at full load, reducing conduction loss and improving power-supply efficiency. The avalanche-rated body diode also handles reverse-current transients during OR-ing switchover events.
おすすめ
Battery Protection in E-Mobility
In e-mobility battery management systems (BMS) operating at 36-72 V nominal battery packs (e-bikes, light electric vehicles, energy storage), the BSC109N10NS3GATMA1 serves as the discharge and charge protection FET between the battery stack and the load or charger. Its 100 V rating comfortably exceeds 72 V pack voltages with margin, and its 10.9 mOhm RDS(on) reduces I2R heating during continuous discharge cycles, prolonging battery runtime. The 78 W thermal envelope supports the peak discharge currents of e-mobility applications (often 30-50 A peak) when properly heatsunk.
おすすめ
Solar Inverter DC-DC Stage
The BSC109N10NS3GATMA1 is well matched to the boost or buck stage in small-to-medium solar inverter DC-DC converters operating from 48 V battery banks or 60 V PV string voltages. The 100 V VDS rating tolerates the open-circuit PV voltage at cold temperatures with margin, and the low RDS(on) at 10.9 mOhm maximizes energy harvest efficiency by minimizing conduction loss. In microinverters and string inverters in the 1-3 kW range, this MOSFET enables efficient high-frequency switching (50-100 kHz), shrinking the magnetics and reducing overall system cost.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSC109N10NS3GATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSC12DN20NS3GATMA1 | IPB35N10S3L26ATMA1 | BSC019N08NS5ATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| VDS Max | 100 V | 200 V | 100 V | 80 V | 100 V |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 6 |
主な差別化要因
- Class-leading OptiMOS 3 FOM with 30% reduction over prior generation （vs BSC019N08NS5ATMA1)
- Standard SuperSO8 5x6 footprint enables drop-in compatibility （vs SiA1236D-E3 (STMicroelectronics))
- 100 V VDS provides ample margin for 48 V telecom and 60 V industrial buses （vs BSC030N03LSGATMA1)
設計ノート
Estimated: at ID=20 A continuous and RDS(on)=10.9 mOhm, conduction loss is approximately P=I2R=20^2 x 0.0109=4.36 W. With the PG-TDSON-8-1 (SuperSO8) thermal resistance of approximately 50 C/W on a standard 1 oz 1 sq inch copper pour, junction temperature rise is roughly 218C above ambient - clearly inadequate for continuous operation. To sustain 20 A continuous at 70C ambient, the designer must use at least 2-4 sq inches of 2 oz copper, multiple thermal vias under the exposed pad, and possibly an external heatsink. Always validate thermal envelope with manufacturer SOA curves before committing to production.
The PG-TDSON-8-1 (SuperSO8) package exposes the drain tab on the bottom for direct PCB heatsinking - use a thermal via array (typically 9-16 vias, 0.3 mm diameter, 1 mm pitch) under the exposed pad to conduct heat into inner copper planes. Minimize the high-current source and drain loop areas to reduce parasitic inductance, which can cause voltage spikes exceeding VDS during switching transients. Place the gate driver within 5-10 mm of the gate pin and use a 10-100 Ohm gate resistor to dampen ringing.
Do not operate the BSC109N10NS3GATMA1 at VGS below the datasheet-recommended threshold (typically 4.5 V minimum for full enhancement) or the RDS(on) will rise dramatically, causing thermal runaway. Ensure the gate driver can sink/source at least 1-2 A peak to charge the 26 nC gate charge quickly during switching transitions. Avoid exceeding the single-pulse avalanche energy rating during inductive load switching - if unavoidable, add a snubber or TVS clamp across the drain-source.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade MOSFET, not automotive grade. Lead-free and halogen-free per packaging marking.
