BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon
部品番号: BSS87H6327FTSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.46 | $0.46 |
| 10 | $0.4 | $4.00 |
| 100 | $0.32 | $32.00 |
| 500 | $0.27 | $135.00 |
| 1,000 | $0.22 | $220.00 |
| 3,000 | $0.18 | $540.00 |
BSS87H6327FTSA1 概要
A small-signal MOSFET is a discrete field-effect transistor optimized for low-current switching and amplification rather than high-power conversion. The BSS87 sits in the broader taxonomy of discrete semiconductors -> MOSFETs -> small-signal MOSFETs -> N-channel enhancement-mode devices. Its 240V rating is unusually high for the SOT-89 package class, making it a strong fit when designers need voltage headroom in a compact, surface-mount footprint.
Key features include a maximum on-resistance (RDS(on)) of 6 ohm at VGS=10V, a low threshold voltage for direct logic-level gate drive from 5V microcontrollers, gate-source breakdown rated to +/-20V, and an automotive-grade qualification per AEC-Q101. The SOT-89 (PG-SOT89-4-2) package provides a metal tab connected to the drain that doubles as a low-thermal-resistance heatsink, enabling 1W continuous dissipation when properly land-patterned on the PCB. The device is fully RoHS compliant, lead-free (Pb-free), and qualified to the automotive reliability standard AEC-Q101, supporting use in both consumer and in-vehicle designs.
Technically, the BSS87 uses Infineon's vertical DMOS process, which positions the channel vertically under the gate to maximize breakdown voltage per unit silicon area - the reason a 240V part can fit in a SOT-89 footprint that competitors normally use only for 60V-100V devices. Compared with planar small-signal MOSFETs, the vertical DMOS structure yields lower specific on-resistance and faster switching at the cost of a higher input capacitance, which the designer must account for in high-speed gate-drive design.
Typical applications include high-side load switching in 24V industrial buses, LED matrix drivers, relay and solenoid drivers in automotive body modules, level shifters between low-voltage microcontrollers and high-voltage rails, and battery-protection circuits in e-mobility. The combination of 240V rating and SOT-89 footprint is rare, so designers choose this part specifically when the alternative is a much larger DPAK or TO-220.
When designing with this part, ensure the gate is driven with at least 10V (or use a charge pump for low-voltage MCU control), keep dv/dt below the datasheet rating, and provide sufficient copper area on the drain tab to achieve the rated 1W dissipation at the application's ambient temperature. For automotive designs, prefer the AEC-Q101-qualified SP number to avoid requalification.
ドロップイン代替品: BSS87H6327FTSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSS87H6327FTSA1 （同一形状・フットプリント） — 相違点: Package, Continuous Drain Current (ID), Drain-Source Voltage (VDS), Technology, MSL Level.
クイック比較ツール — 並列比較する代替部品を選択:
BSS606NH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.13 / 個
データシートを見る →BSR802NL6327HTSA1
✅ ドロップイン✓ 在庫あり
$0.15 / 個
データシートを見る →BSS192PH6327FTSA1
✅ ドロップイン✓ 在庫あり
$0.34 / 個
データシートを見る →BSP316PH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.21 / 個
データシートを見る →BSP315PH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.31 / 個
データシートを見る →BSS205NH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.12 / 個
データシートを見る →BSP88H6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.21 / 個
データシートを見る →BSS87H6327FTSA1 最大定格＆電気的特性
| FET Type | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) | 240 V |
| Continuous Drain Current (ID) | 260 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | +/-20 V |
| パッケージ | PG-SOT89-4-2 (SOT-89) |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +150C (junction) |
| ピン数 | 3 (Gate / Drain / Source) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS ステータス | Compliant |
| Lead-Free / Pb-Free | Yes (Pb-free plating) |
| MSLレベル | 1 (per JEDEC J-STD-020) |
| Process Technology | Vertical DMOS |
BSS87H6327FTSA1 ピン構成
| ピン 1 | Gate — Gate control input; drive with >=10V for full enhancement |
| ピン 2 | Drain — Drain terminal; also serves as thermal tab connected to drain internally |
| ピン 3 | Source — Source terminal; connect to circuit ground or low-side rail |
安全動作領域 (DC)
主な用途
BSS87H6327FTSA1 の用途: 6 件s: 24V Industrial Bus High-Side Switching, Automotive Body Electronics Load Drivers, Solid-State Relay (SSR) Output Stage, E-Mobility Battery Protection Cut-Off, Level Shifter for Microcontroller to High-Voltage Rail, LED Matrix Row/Column Driver.
24V Industrial Bus High-Side Switching
The BSS87H6327FTSA1 fits 24V industrial bus switching because its 240V VDS rating provides substantial headroom above the nominal 24V rail and below load-dump transients on PLC digital outputs. With 260mA continuous drain current the device handles typical sensor, LED-indicator, and small-re coil loads found on industrial backplanes. The SOT-89 footprint allows it to fit on densely populated PLC cards that cannot accommodate a DPAK MOSFET. Place the BSS87 between the 24V rail and the load, gate-drive via a logic-level shift or buffer from the MCU, and add a 100k gate-source resistor to ensure defined off-state. Compared with a Darlington driver, the BSS87 provides faster switching (low Qg) and lower saturation loss, improving overall module efficiency.
おすすめ
Automotive Body Electronics Load Drivers
The BSS87H6327FTSA1 is AEC-Q101 qualified, making it ideal for automotive body-electronics applications such as LED daytime-running-light drivers, mirror-adjust loads, and small solenoid controls. Its 240V VDS withstands the harsh transient environment defined by ISO 7637-2 and LV 124, while 260mA continuous current is sufficient for most body-control loads below 5W. The compact SOT-89 footprint supports the dense PCB layouts typical of BCM (body control modules) and door-module PCBs. Gate-drive can be provided by a low-cost automotive-grade gate driver such as the 1EDN6550BXTSA1. Compared with bipolar Darlington drivers, the BSS87 cuts conduction loss by roughly 80% and eliminates the need for a flyback diode on inductive loads when paired with a freewheel diode externally.
おすすめ
Solid-State Relay (SSR) Output Stage
The BSS87H6327FTSA1 is well-suited as the output switch in a solid-state relay (SSR) for AC or DC load switching up to 200V rails. Its 240V VDS rating exceeds the peak of typical 120/230VAC rectified supplies (after derating), and the SOT-89 footprint allows very compact SSR designs for PCB-mount modules. Designers typically add an input-side optocoupler (for galvanic isolation) and a gate-bias network to hold the BSS87 in the on-state once triggered. Compared with triac-based SSRs, the MOSFET output eliminates zero-crossing noise and allows DC switching, at the cost of requiring a freewheel path for inductive DC loads.
おすすめ
E-Mobility Battery Protection Cut-Off
The BSS87H6327FTSA1 fits e-mobility battery-protection circuits (e-bikes, e-scooters, low-voltage EV auxiliaries) where a compact 240V-rated MOSFET is required to interrupt the pack discharge path on fault conditions. The 260mA rating covers auxiliary low-current rails such as the BMS supply, indicator LEDs, and logic-level enable lines. Designers pair it with a dedicated battery-protection IC and a low-Rds(on) main power MOSFET for the high-current path; the BSS87 is used in the sense/auxiliary branch. Its SOT-89 footprint is well-suited to the compact BMS PCBs found in handlebar-mounted controllers.
おすすめ
Level Shifter for Microcontroller to High-Voltage Rail
The BSS87H6327FTSA1 functions as a simple open-drain-style level shifter when its source is tied to the target high-voltage rail and its drain pulled up to the MCU's logic rail via a resistor. This topology translates a logic-level MCU GPIO signal into a high-voltage switch on the source side, useful for driving 12V / 24V relays from a 3.3V MCU. With 240V VDS, the device tolerates a wide range of target rails including 48V telecom. The low Qg of the BSS87 keeps level-shifter propagation delay in the tens of nanoseconds - faster than most optocoupler solutions - making it suitable for PWM feedback and timing-sensitive interfaces.
おすすめ
LED Matrix Row/Column Driver
The BSS87H6327FTSA1 is well-matched to LED matrix scanning applications where individual rows or columns must be pulled low by an N-channel switch. With 240V VDS the device tolerates long-series LED strings (e.g., 50-70 white LEDs in series at ~3V each) and 260mA continuous drain current covers typical 20-50mA per-row average currents. The SOT-89 footprint supports the dense matrix PCB layouts found in large-format signage. Compared with discrete transistor arrays, the BSS87's low RDS(on) keeps voltage headroom loss below 1V even at full row current, simplifying the LED-current calculations for the driver IC.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSS87H6327FTSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSS606NH6327XTSA1 | BSR802NL6327HTSA1 | BSS192PH6327FTSA1 | BSP316PH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-SOT89-4-2 (SOT-89) | PG-SOT89-4-2 (SOT-89) - same | PG-SOT89-4-2 (SOT-89) - same | PG-SOT89-4-2 (SOT-89) - same | PG-SOT89-4-2 (SOT-89) - same | PG-SOT89-4-2 (SOT-89) - same |
| FET Type / Polarity | N-Channel enhancement | N-Channel | N-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 240 V | 200 V | 20 V | -250 V (P-ch) | -100 V (P-ch) | -60 V (P-ch) |
| On-Resistance RDS(on) max | 6 ohm @ VGS=10V | 6.5 ohm @ VGS=10V | 0.040 ohm @ VGS=10V (logic-level) | 12 ohm @ VGS=10V | 8 ohm @ VGS=10V | 8 ohm @ VGS=10V |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Approx. Price @ qty 1000 | $0.22 | ~$0.20 | ~$0.18 | ~$0.30 | ~$0.22 | ~$0.20 |
主な差別化要因
- Unusually high 240V VDS in SOT-89 package （vs BSS606NH6327XTSA1)
- True N-channel polarity at 240V （vs BSS192PH6327FTSA1)
- Voltage-class differentiation （vs BSR802NL6327HTSA1)
設計ノート
The SOT-89 (PG-SOT89-4-2) drain tab is the primary heat-dissipation path. Estimated: at TA=25C, ID=260mA, and VDS=10V the device dissipates approximately 2.6W if forced into linear operation, but the datasheet limits continuous power to 1W (TA). Mount the tab on at least 100 mm^2 of 2-oz copper pour to achieve the rated RthJA of ~125 C/W; without copper the junction can exceed 150C within seconds at full load. Derate linearly above TA=25C using the datasheet thermal curve.
Route the gate trace as a short, narrow track directly from the driver to pin 1, keeping it away from the drain (pin 2) to minimize Miller coupling. Place a 10k-100k gate-source resistor on every BSS87 to guarantee a defined off-state when the driver is tri-stated during MCU reset or programming. Add a TVS diode across drain-source when switching inductive loads to clamp the flyback voltage below the 240V VDS rating.
Driving the BSS87 directly from a 3.3V or 5V GPIO is a common pitfall: the datasheet specifies RDS(on) at VGS=10V, so at 5V VGS the device will conduct but RDS(on) is much higher than 6 ohm and conduction loss becomes unacceptable for continuous switching. Use a gate-driver IC, charge pump, or bootstrap supply when only logic-level rails are available. Also do not exceed VGS=+/-20V, even transiently - the gate oxide is not as rugged as the drain junction.
コンプライアンス情報
RoHS compliant (Pb-free plating) and AEC-Q101 qualified for automotive reliability per Infineon datasheet. Halogen-free status not explicitly stated in the verified web data; set to unknown. Conflict-minerals compliance per Infineon corporate policy.
