CSD17484F4 - 30V N-Ch FemtoFET MOSFET 3A | Texas Instruments
部品番号: CSD17484F4 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.47 | $4.70 |
| 100 | $0.34 | $34.00 |
| 500 | $0.28 | $140.00 |
| 1,000 | $0.22 | $220.00 |
CSD17484F4 概要
A power MOSFET is a three-terminal voltage-controlled semiconductor switch used to regulate or switch power in electronic systems. Within the hierarchy of power management components - power management IC to discrete power transistor to small-signal MOSFET - the FemtoFET family occupies the small-signal segment, replacing standard small-signal MOSFETs while providing at least a 60% reduction in footprint size.
Key features include the 30V drain-to-source rating suitable for single-cell and multi-cell battery stacks, low gate charge for fast switching with limited drive current, a low gate threshold voltage for 1.8V-2.5V logic-compatible drive, and integrated gate ESD protection that improves assembly robustness on automated SMT lines.
The NexFET process technology balances RDS(on) against gate charge, achieving low conduction loss at modest loads while keeping total switching energy low. Because the PICOSTAR LGA package has extremely small thermal mass, PCB copper area is the primary thermal path and must be designed accordingly.
Typical applications include smartphone and tablet load switches, portable battery-powered devices, wearable electronics, and low-side switching in compact industrial sensor nodes where board area is the dominant constraint.
Design tip: at only 1.0 x 0.6 mm, the land pattern and stencil design directly determine both solderability and RDS(on) performance - follow the TI datasheet (SLPS550) layout recommendations exactly, and verify thermal dissipation with copper pour area rather than assuming package ratings alone.
ドロップイン代替品: CSD17484F4 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
CSD17483F4
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD17484F4 最大定格＆電気的特性
| VDS Drain-to-Source Voltage | 30 V |
| ID Continuous Drain Current | 3 A (Ta) |
| RDS(on) Max | 128 mOhm |
| RDS(on) Typ | 99 mOhm |
| Power Dissipation | 500 mW (Ta) |
| Polarity | N-Channel |
| Technology | NexFET / FemtoFET |
| Gate ESD Protection | Yes |
| パッケージ | 3-PICOSTAR LGA (1.0 mm x 0.6 mm) |
| 実装タイプ | Surface Mount |
| Configuration | Single FET |
| Footprint Reduction | >= 60% vs standard small-signal MOSFETs |
| Drive Compatibility | Low VGS(th), logic-level drive |
CSD17484F4 ピン構成
| ピン 1 | G — Gate terminal - logic-level drive input with integrated ESD protection |
| ピン 2 | S — Source terminal - reference for gate drive and current return |
| ピン 3 | D — Drain terminal - main current path, also primary thermal path via PCB copper |
主な用途
CSD17484F4 の用途: 6 件s: Smartphone Load Switching, Portable Battery-Powered Devices, Wearable Electronics, Compact Industrial Sensor Nodes, Camera Flash and Haptics Drivers, Board-Level DC Power Distribution.
Smartphone Load Switching
The CSD17484F4 fits smartphone power rails where every square millimeter of PCB counts. Its 1.0 x 0.6 mm PICOSTAR footprint is at least 60% smaller than standard small-signal MOSFETs, while the 99 mOhm typical RDS(on) keeps conduction loss low at sub-amp load currents. Placed as a low-side switch between the PMIC and system load, the low gate threshold voltage permits direct drive from 1.8V-2.5V logic rails, and integrated gate ESD protection survives automated assembly handling.
おすすめ
Portable Battery-Powered Devices
In battery-powered tablets, power banks, and handheld instruments, the CSD17484F4 serves as a battery disconnect or load switch on single-cell and multi-cell stacks within its 30V rating. The low on-resistance of 99 mOhm typical minimizes voltage drop and wasted energy at moderate loads, extending runtime, while low gate charge keeps switching losses small even when driven by power management ICs with limited gate-drive current, making it efficient for infrequent and periodic switching duties.
おすすめ
Wearable Electronics
Smartwatches, fitness bands, and hearables demand the smallest viable power switches. The CSD17484F4 PICOSTAR LGA occupies roughly 0.6 square millimeters, enabling dense flexible and rigid PCB layouts where component height and area dominate. Its NexFET process balances RDS(on) and gate charge so wearables can switch sensor rails and haptics supplies efficiently, and the 3A continuous rating provides ample headroom above typical wearable load currents of tens to hundreds of milliamps.
おすすめ
Compact Industrial Sensor Nodes
Low-side switching in industrial sensor nodes and IIoT modules benefits from the CSD17484F4's combination of 30V tolerance and minimal footprint on dense mixed-signal boards. The 128 mOhm maximum RDS(on) ensures predictable conduction loss across process corners, and gate ESD protection improves yields on automated SMT lines handling tiny LGA packages. Nodes switching 12V or 24V sensor supplies within the 30V limit can use this FET with logic-level drive from an MCU GPIO through a small gate resistor.
おすすめ
Camera Flash and Haptics Drivers
Mobile camera flash capacitors and haptic actuators need small, fast, robust switches. The CSD17484F4's low total gate charge permits rapid turn-on and turn-off with limited drive current, important for timing-critical flash charge/discharge paths within its 30V rating. Its 3A capability handles pulsed currents with the 500 mW dissipation limit respected, and the 60% footprint saving versus SOT-23 alternatives frees board area near the camera module where space is scarcest.
おすすめ
Board-Level DC Power Distribution
On dense daughter cards and modules, the CSD17484F4 acts as a low-side switch or inrush-control element on 3.3V-12V distribution rails. Working with hot-swap or eFuse controllers, its 30V VDS rating provides margin on 12V rails, and 99 mOhm typical RDS(on) keeps drop below 10 mV per ampere. The PICOSTAR layout demands attention: TI datasheet SLPS550 land-pattern guidance and generous copper pours ensure both solderability and thermal performance at sustained load.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: CSD17484F4 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | CSD17483F4 | CSD22206W | CSD17303Q5 |
|---|---|---|---|---|
| Package | 3-PICOSTAR LGA (1.0 x 0.6 mm) | 3-PICOSTAR LGA - same | SOT-23 (W) - different | SON 2x2 - different |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Footprint Area | 0.6 mm2 | 0.6 mm2 | ~5.6 mm2 (SOT-23) | 4 mm2 (SON 2x2) |
主な差別化要因
- Smallest footprint in its voltage class （vs CSD22206W)
- Integrated gate ESD protection （vs CSD17483F4)
- 30V rating in a 1x0.6 mm package （vs CSD17303Q5)
設計ノート
The PICOSTAR package is rated 500 mW at 25C ambient, but its tiny thermal mass means PCB copper is the only heatsink. Maximize drain and source copper pours on the top layer and add stitching vias to inner/ground planes where the net permits. At 1A continuous, conduction loss is roughly I2 x R = 0.13W, which is safe; at 3A it approaches 1.15W and exceeds the rating - derate duty cycle or use a larger FemtoFET/NexFET.
Follow TI datasheet SLPS550 land-pattern and stencil recommendations exactly. The three LGA bumps on a 1.0 x 0.6 mm body require a fine stencil (thin foil, reduced apertures) to deposit a controlled paste volume: too little paste causes open joints, too much causes bridging between bumps. Confirm the stencil aperture area ratio with your fabricator before production.
Gate drive must respect the absolute maximum VGS rating in datasheet SLPS550 - although the part has gate ESD protection, this does not replace a series gate resistor or zener clamp when driven from noisy or inductive sources. Also, do not assume SOT-23 thermal behavior: the LGA has no exposed pad and relies entirely on bump-to-copper heat transfer, so reflow profile per TI guidance is mandatory.
コンプライアンス情報
Compliance status not present in the provided verified web data. TI standard product is typically RoHS-compliant; confirm on the TI.com quality page for CSD17484F4.
