CSD17484F4 - 30V N-Ch FemtoFET MOSFET 3A | Texas Instruments
MPN: CSD17484F4 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.36 | $3.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
Drop-in alternatives for CSD17484F4 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
CSD17483F4
β Drop-Inπ Reference alternative (not in catalog)
CSD17484F4T
β Drop-Inπ Reference alternative (not in catalog)
CSD17484F4 Maximum Ratings & Electrical Characteristics
| Configuration | Single N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 3 A (Ta) |
| On-Resistance (RDS(on)) Max | 128 mOhm |
| On-Resistance (RDS(on)) Typ | 99 mOhm |
| Power Dissipation (PD) | 500 mW (Ta) |
| Technology | FemtoFET / NexFET |
| Gate ESD Protection | Yes |
| Package | 3-PICOSTAR (1 x 0.60 mm) LGA |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] |
| Operating Temperature | [DATA_NEEDED: operating temperature range] |
| RoHS Status | Compliant |
| Footprint Reduction vs Standard SOT | At least 60% |
CSD17484F4 Pin Configuration
| Pin 1 | G β Gate - control terminal with integrated ESD protection |
| Pin 2 | S β Source |
| Pin 3 | D β Drain (large bottom pad shares drain connection) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
CSD17484F4 is suitable for 6 applications: Smartphone Load Switch, Portable Battery-Powered Devices, Wearable Electronics, Compact Industrial Sensor Nodes, Tablet and Handheld Display/Peripheral Rails, Security Camera and IoT Module Power Gating.
Smartphone Load Switch
The CSD17484F4 fits smartphone load switching because its 1.0 x 0.6 mm PICOSTAR footprint occupies roughly 40% of an SC-70 area while still handling 3A and 30V. With 99 mOhm typical RDS(on), voltage drop at a 1A phone rail is only 99 mV, dissipating about 99 mW - within the 500 mW package rating with minimal copper. Driven directly from a GPIO through a small drive transistor, its low gate charge enables fast, low-energy switching. Place it in series with peripheral power rails to cut sleep-mode leakage.
Recommended
Portable Battery-Powered Devices
In battery-powered products, the CSD17484F4 serves as a battery disconnect or low-side switch. Its 30V rating covers multi-cell Li-ion stacks and charger transients, while 99 mOhm typical RDS(on) keeps conduction loss low enough to preserve battery runtime. Because battery protection circuits need fast fault interruption, the low gate charge permits rapid turn-off from protection IC outputs. Verify thermal design: at 2A continuous, dissipation is about 400 mW, near the 500 mW limit, so ensure adequate copper pour under the PICOSTAR pads.
Recommended
Wearable Electronics
Wearables demand the smallest possible power switches, making the CSD17484F4 PICOSTAR LGA a natural fit. The 1.0 x 0.6 mm body fits under shields and inside tight module areas, and integrated gate ESD protection tolerates assembly handling. With 99 mOhm typical RDS(on), switching sensor or display rails of a few hundred milliamps adds negligible voltage drop and heat. Low gate threshold allows interfacing with low-voltage microcontroller GPIO. Follow TI land pattern layout exactly - stencil design at this scale determines solder joint reliability.
Recommended
Compact Industrial Sensor Nodes
Industrial IoT sensor nodes use the CSD17484F4 to switch peripheral sensors and radios for aggressive duty-cycling. Its 30V rating survives industrial supply transients on 12-24V auxiliary rails, and 3A capacity covers radio transmit bursts. Low gate charge allows drive from small logic-level translators or supervisor outputs, minimizing quiescent overhead in always-on nodes. The PICOSTAR footprint enables high-density node designs on two-layer PCBs; add local copper plane under the device so the 500 mW dissipation rating holds in enclosed enclosures.
Recommended
Tablet and Handheld Display/Peripheral Rails
Tablet designers deploy the CSD17484F4 to gate display backlight, touch, and peripheral power rails. At 3A continuous it supports inrush-limited rail turn-on when paired with soft-start circuits, and 99-128 mOhm RDS(on) keeps rail droop below 1% on 5V supplies at moderate loads. The 60% footprint reduction versus standard small-signal MOSFETs directly increases routing density around connectors. Ensure GPIO drive satisfies gate charge requirements for clean turn-on, and keep gate traces short to limit ringing at multi-megahertz switching edges.
Recommended
Security Camera and IoT Module Power Gating
Battery or PoE-backed security cameras and IoT modules use the CSD17484F4 to power-gate image sensors, wireless modules, and flash between capture or transmit events. The 30V VDS tolerates PoE transients on auxiliary circuits, while the tiny footprint allows gating individual subsystems rather than an entire module. With 99 mOhm typical on-resistance, leakage and conduction losses in sleep states stay minimal, directly extending battery life. Its low gate threshold supports drive from low-voltage PMIC GPIO outputs common in camera SoC power trees.
Recommended
Recommended Products Summary
Engineering reference data for CSD17484F4 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CSD17483F4 | CSD17303Q5 | AON7410 |
|---|---|---|---|---|
| Package | 3-PICOSTAR (1 x 0.60 mm) LGA | 3-PICOSTAR (1 x 0.60 mm) - same | SON 3x3 | DFN 3x3 |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Alpha & Omega Semiconductor |
| VDS | 30 V | 30 V | [DATA_NEEDED] | 40 V |
| RDS(on) Max | 128 mOhm | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current | 3 A (Ta) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation | 500 mW (Ta) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate ESD Protection | Yes | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | FemtoFET / NexFET | FemtoFET / NexFET | NexFET | AlphaMOS |
Key Differentiators
- Industry-leading footprint (vs AON7410)
- Integrated gate ESD protection (vs CSD17303Q5)
- Low conduction loss at tiny scale (vs Generic SOT-23 30V MOSFET)
Design Notes
The 3-PICOSTAR package has only 500 mW power dissipation at 25C ambient and essentially no self-standing thermal mass. At full 3A load with 128 mOhm max RDS(on), dissipation could reach 1.15W, so real continuous current in a given layout is limited by copper area under the PICOSTAR pads. Provide at least the TI-recommended land pattern with short, wide drain and source traces into a copper pour, and derate current at elevated ambient temperatures per the datasheet normalized thermal impedance curves.
The 1.0 x 0.6 mm LGA land pattern requires precise stencil design - typically a reduced-thickness stencil (around 100 um) with apertures per TI datasheet Figure to prevent solder bridging and insufficient joint formation. Avoid via-in-pad under the drain pad unless filled and plated. Inspect with X-ray or angled optical during first-article builds since the joints are hidden under the LGA body.
Drive the gate with a source impedance low enough to charge the gate quickly, but the gate ESD protection network means standard MOSFET gate-drive assumptions may shift slightly - consult the datasheet VGS ratings and do not exceed the abs-max gate voltage. Also note third-party 'equivalents' such as AON7410 or BSC090N06LS are NOT drop-in: the PICOSTAR footprint is TI-exclusive and any substitution requires a PCB redesign.
Compliance Information
RoHS compliance per TI product page. AEC-Q100 qualification not indicated for this part - verify with TI quality portal for automotive use.
