CY14B104NA - 4Mbit 256Kx16 nvSRAM 25ns | Infineon/Cypress
部品番号: CY14B104NA ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $23.37 | $23.37 |
| 10 | $21.03 | $210.30 |
| 100 | $18.7 | $1,870.00 |
| 500 | $16.36 | $8,180.00 |
| 1,000 | $14.02 | $14,020.00 |
CY14B104NA 概要
An nvSRAM is a memory IC that pairs a standard SRAM cell with a nonvolatile QuantumTrap element in each bit cell. Within the memory hierarchy it sits between pure SRAM (fast but volatile) and EEPROM/Flash (nonvolatile but slow to write). nvSRAM behaves like fast SRAM during normal operation and copies the entire array into the nonvolatile elements on power-down or on demand, so no battery backup is required.
Key features include three storage operations: hardware STORE triggered by the HSB pin, software STORE via an address sequence, and AutoStore on power-down (enabled by default). Access times of 20 ns, 25 ns, and 45 ns are offered across the family. Write operations are SRAM-fast, giving effectively unlimited endurance during SRAM operation, while the nonvolatile element retains data for years without power.
The device is built on Cypress QuantumTrap technology, which uses a proprietary trapping-layer process to capture charge in each cell without the erase/write bottlenecks of Flash. During low-voltage conditions (VCC below VSWITCH), the device inhibits all externally initiated STORE and write operations to protect data integrity from corruption.
Typical applications include industrial PLCs and data loggers, RAID/disk-drive controller configuration storage, networking equipment for fast-reboot state retention, and automotive event recorders where the automotive-qualified CY14B104NA variants apply.
Design consideration: the 8 ms (typical family value) STORE operation temporarily blocks SRAM access, so firmware should tolerate a short stall on power-down and reserve adequate hold-up capacitance to complete AutoStore.
This page synthesizes distributor pricing, verified cross-reference data including the Everspin MRAM drop-in equivalent, and practical design notes not consolidated in the manufacturer datasheet.
ドロップイン代替品: CY14B104NA — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
CY14B104NA-ZS25XI
✅ ドロップイン📋 参考代替品（カタログ未掲載）
CY14B104NA-ZS20XI
✅ ドロップイン📋 参考代替品（カタログ未掲載）
CY14B104NA-ZS45XI
✅ ドロップイン📋 参考代替品（カタログ未掲載）
CY14B104NA-ZSP45XI
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MR2A16AYS35
✅ ドロップイン📋 参考代替品（カタログ未掲載）
CY14B104LA-25ZSXI
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CY14B104NA 最大定格＆電気的特性
| メモリサイズ | 4 Mbit |
| メモリ構成 | 256K x 16 |
| インターフェースタイプ | Parallel |
| Access Time | 25 ns (20 ns and 45 ns grades also offered) |
| Technology | QuantumTrap nvSRAM (SRAM + nonvolatile cell) |
| Nonvolatile Storage Operations | Hardware STORE (HSB), Software STORE, AutoStore on power-down |
| AutoStore | Enabled by default |
| Low-Voltage Protection | Inhibits STORE/write when VCC < VSWITCH |
| Operating Temperature (XI grade) | -40C to +85C |
| Endurance (SRAM writes) | Unlimited during SRAM operation |
| Data Retention | Nonvolatile, battery-free |
| パッケージ | 44-TSOP II (ZS); 54-ball FBGA (BA) |
| 実装タイプ | Surface Mount |
| Automotive Qualification | Automotive nvSRAM variants available |
CY14B104NA 44-tsop ii (zs); 54-ball fbga (ba) ピン配置ガイド
CY14B104NA (44-tsop ii (zs); 54-ball fbga (ba) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: CY14B104NA.
詳細は データシート をご参照ください。
主な用途
CY14B104NA の用途: 6 件s: Industrial PLC and Data Logger, RAID and Disk-Drive Controller State Storage, Networking Equipment Fast Reboot, Automotive Event Data Recorder, Medical Instrument Calibration Storage, Smart Metering and IoT Gateway.
Industrial PLC and Data Logger
The CY14B104NA fits industrial programmable logic controllers and event data loggers because it combines 25 ns SRAM-speed writes with battery-free nonvolatile retention: process setpoints, counters, and fault histories can be updated thousands of times per second and survive power loss automatically via AutoStore. The part is placed on the processor's parallel memory bus with CE/OE/WE control and 10 uF bulk plus 0.1 uF local decoupling; the VCAP pin network must follow the Infineon datasheet recommendation so the 8 ms-class STORE completes during brownout. Low-voltage inhibition below VSWITCH guarantees no corrupted half-written records, eliminating the checksum-repair routines that battery-backed SRAM and Flash loggers typically need.
おすすめ
RAID and Disk-Drive Controller State Storage
Disk and RAID controllers use the CY14B104NA to hold configuration tables, write-journal state, and mirror metadata that must be instantly writable and survive unexpected power cuts. The 256K x 16 organization maps directly to 16-bit controller buses, and the 25 ns access grade keeps state reads off the critical path. Unlike Flash-based journal storage, nvSRAM writes require no erase cycle, so journaling never stalls I/O throughput, and AutoStore commits state at power-down without host intervention. Designers connect the HSB pin to the controller supervisor to also trigger a software STORE on graceful shutdown, and should budget the 8 ms-class STORE window in the firmware shutdown sequence.
おすすめ
Networking Equipment Fast Reboot
Routers, switches, and telecom line cards use the CY14B104NA to retain routing tables, license data, and configuration snapshots so a reboot can restore service in seconds. The 25 ns parallel access lets the CPU reload state immediately at power-up without reading through a serial EEPROM bottleneck, and the QuantumTrap cells retain data for years unpowered. In redundant systems the hardware STORE via HSB provides a deterministic commit point for synchronized failover state. The 44-TSOP II footprint allows two-layer routing under the part with controlled-length address traces; designers should verify bus turnaround timing since STORE cycles block SRAM access momentarily during power transitions.
おすすめ
Automotive Event Data Recorder
Automotive-qualified CY14B104NA variants serve event data recorders and body-control modules where crash records, odometer data, and fault codes must be captured at SRAM speed and survive key-off without battery backup. The dedicated automotive datasheet from Infineon documents the low-voltage protection: below VSWITCH all externally initiated STORE and write operations are inhibited, preventing corruption during cold-crank and load-dump transients. The device occupies the MCU parallel bus with standard SRAM timing, and the wide industrial-to-automotive temperature coverage supports underhood and cabin locations. Layout should keep the VCAP network close to the device so AutoStore completes despite battery disconnect.
おすすめ
Medical Instrument Calibration Storage
Laboratory and medical instruments use the CY14B104NA to store calibration curves, patient-session settings, and audit-trail counters that change frequently but must persist across power cycles and transport. The 25 ns SRAM access allows the main processor to update calibration data in real time during self-calibration routines, while AutoStore guarantees the latest calibration is committed when the instrument is unplugged - critical for devices moved between rooms. Battery-free retention removes lithium-cell maintenance, simplifying compliance logistics. The 256K x 16 organization suits 16-bit DSP buses, and software STORE via the address sequence lets firmware create explicit checkpoints at the end of each calibration procedure.
おすすめ
Smart Metering and IoT Gateway
Energy meters and IoT gateways use the CY14B104NA for tamper counters, load-profile ring buffers, and provisioning secrets that must be written continuously and retained through outages and tamper events. SRAM-speed writes allow per-interval energy accumulation without wear concerns, contrasting with Flash meters that must batch writes to limit erase cycles. AutoStore commits the profile automatically at power-down, and low-voltage inhibition below VSWITCH blocks writes during deliberate brownout tampering. The 4-Mbit density holds months of interval data at 256K x 16, and the 44-TSOP II package is easily sourced and inspected for utility-grade supply chains. Pair with a supervisor IC that leaves HSB free for hardware STORE.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: CY14B104NA — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | CY14B104NA-ZS25XI | CY14B104NA-ZS20XI | CY14B104NA-ZS45XI | CY14B104NA-ZSP45XI | MR2A16AYS35 | CY14B104LA-25ZSXI |
|---|---|---|---|---|---|---|---|
| Package | 44-TSOP II | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP2 - same | 44-TSOP II - same |
| Brand | Infineon Technologies (Cypress) | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Everspin | Infineon Technologies |
| Access Time | 25 ns | 25 ns | 20 ns | 45 ns | 45 ns | 35 ns | 25 ns |
| Memory Organization | 256K x 16 | 256K x 16 | 256K x 16 | 256K x 16 | 256K x 16 | 1M x 16 MRAM | 512K x 8 |
| Memory Technology | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | MRAM (TMR cell) | QuantumTrap nvSRAM |
| AutoStore / STORE Cycle | Yes (HW + SW + AutoStore) | Yes | Yes | Yes | Yes | Not required (intrinsically nonvolatile) | Yes |
主な差別化要因
- Fastest SRAM-speed writes with automatic nonvolatile commit （vs MR2A16AYS35)
- Lower cost at reduced speed （vs CY14B104NA-ZS20XI)
- Extended-temperature availability in the identical footprint （vs CY14B104NA-ZS25XI)
設計ノート
AutoStore depends on the external VCAP capacitor: during power-down the device harvests charge from VCAP to complete the STORE cycle, which takes on the order of 8 ms for this family (estimated from QuantumTrap family behavior; confirm exact tSTORE in the Infineon datasheet). Place the specified low-ESR capacitor directly at the VCAP pin, and ensure system bulk capacitance decays VCC through VSWITCH slowly enough that the supervisor does not gate HSB before STORE completes.
The device inhibits all externally initiated STORE and write operations when VCC falls below VSWITCH. Designs that assert CE/WE via a power-good signal must account for this; otherwise the MCU may report failed writes during brownout. Additionally, an 8 ms-class STORE blocks SRAM access - watchdog timeouts of less than 10 ms on shutdown paths can falsely trip. Verify per the manufacturer datasheet rather than relying on typical figures.
Keep the 44-TSOP II address/data traces under 10 cm and series-terminate if bus speeds exceed 50 MHz to control ringing on the 25 ns access window. Use a solid ground plane beneath the device, one 0.1 uF ceramic per supply pin plus 10 uF bulk, and route VCAP away from switching-regulator nodes. Do not place the HSB trace adjacent to high-dV/dt signals since it drives the hardware STORE function.
For 20/25 ns grades, close timing against the datasheet tAA/tACE values at your worst-case temperature grade; the 45 ns parts provide generous margin and can substitute in slower systems as a cost reduction. When substituting the Everspin MR2A16AYS35 MRAM, re-verify cycle timing because MRAM has no STORE stalls but slightly different read/write margins than QuantumTrap nvSRAM.
コンプライアンス情報
Automotive nvSRAM variants of CY14B104NA exist per the Infineon automotive datasheet, but explicit RoHS/REACH/lead-free declarations were not present in the provided web data.
