CY14B104NA - 4Mbit 256Kx16 nvSRAM 25ns | Infineon/Cypress
料号： CY14B104NA ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $23.37 | $23.37 |
| 10 | $21.03 | $210.30 |
| 100 | $18.7 | $1,870.00 |
| 500 | $16.36 | $8,180.00 |
| 1,000 | $14.02 | $14,020.00 |
CY14B104NA 概述
An nvSRAM is a memory IC that pairs a standard SRAM cell with a nonvolatile QuantumTrap element in each bit cell. Within the memory hierarchy it sits between pure SRAM (fast but volatile) and EEPROM/Flash (nonvolatile but slow to write). nvSRAM behaves like fast SRAM during normal operation and copies the entire array into the nonvolatile elements on power-down or on demand, so no battery backup is required.
Key features include three storage operations: hardware STORE triggered by the HSB pin, software STORE via an address sequence, and AutoStore on power-down (enabled by default). Access times of 20 ns, 25 ns, and 45 ns are offered across the family. Write operations are SRAM-fast, giving effectively unlimited endurance during SRAM operation, while the nonvolatile element retains data for years without power.
The device is built on Cypress QuantumTrap technology, which uses a proprietary trapping-layer process to capture charge in each cell without the erase/write bottlenecks of Flash. During low-voltage conditions (VCC below VSWITCH), the device inhibits all externally initiated STORE and write operations to protect data integrity from corruption.
Typical applications include industrial PLCs and data loggers, RAID/disk-drive controller configuration storage, networking equipment for fast-reboot state retention, and automotive event recorders where the automotive-qualified CY14B104NA variants apply.
Design consideration: the 8 ms (typical family value) STORE operation temporarily blocks SRAM access, so firmware should tolerate a short stall on power-down and reserve adequate hold-up capacitance to complete AutoStore.
This page synthesizes distributor pricing, verified cross-reference data including the Everspin MRAM drop-in equivalent, and practical design notes not consolidated in the manufacturer datasheet.
直接替换替代料： CY14B104NA ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
CY14B104NA-ZS25XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14B104NA-ZS20XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14B104NA-ZS45XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14B104NA-ZSP45XI
✅ 直接替换📋 参考替代料（不在目录中）
MR2A16AYS35
✅ 直接替换📋 参考替代料（不在目录中）
CY14B104LA-25ZSXI
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
CY14B104NA 最大额定值与电气特性
| 存储容量 | 4 Mbit |
| 存储组织 | 256K x 16 |
| 接口类型 | Parallel |
| Access Time | 25 ns (20 ns and 45 ns grades also offered) |
| Technology | QuantumTrap nvSRAM (SRAM + nonvolatile cell) |
| Nonvolatile Storage Operations | Hardware STORE (HSB), Software STORE, AutoStore on power-down |
| AutoStore | Enabled by default |
| Low-Voltage Protection | Inhibits STORE/write when VCC < VSWITCH |
| Operating Temperature (XI grade) | -40C to +85C |
| Endurance (SRAM writes) | Unlimited during SRAM operation |
| Data Retention | Nonvolatile, battery-free |
| 封装 | 44-TSOP II (ZS); 54-ball FBGA (BA) |
| 安装类型 | Surface Mount |
| Automotive Qualification | Automotive nvSRAM variants available |
CY14B104NA 44-tsop ii (zs); 54-ball fbga (ba) 引脚配置指南
CY14B104NA（44-tsop ii (zs); 54-ball fbga (ba) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： CY14B104NA.
请参阅 数据手册 以查看完整引脚配置。
典型应用
CY14B104NA 适用于 6 应用s: Industrial PLC and Data Logger, RAID and Disk-Drive Controller State Storage, Networking Equipment Fast Reboot, Automotive Event Data Recorder, Medical Instrument Calibration Storage, Smart Metering and IoT Gateway.
Industrial PLC and Data Logger
The CY14B104NA fits industrial programmable logic controllers and event data loggers because it combines 25 ns SRAM-speed writes with battery-free nonvolatile retention: process setpoints, counters, and fault histories can be updated thousands of times per second and survive power loss automatically via AutoStore. The part is placed on the processor's parallel memory bus with CE/OE/WE control and 10 uF bulk plus 0.1 uF local decoupling; the VCAP pin network must follow the Infineon datasheet recommendation so the 8 ms-class STORE completes during brownout. Low-voltage inhibition below VSWITCH guarantees no corrupted half-written records, eliminating the checksum-repair routines that battery-backed SRAM and Flash loggers typically need.
推荐
RAID and Disk-Drive Controller State Storage
Disk and RAID controllers use the CY14B104NA to hold configuration tables, write-journal state, and mirror metadata that must be instantly writable and survive unexpected power cuts. The 256K x 16 organization maps directly to 16-bit controller buses, and the 25 ns access grade keeps state reads off the critical path. Unlike Flash-based journal storage, nvSRAM writes require no erase cycle, so journaling never stalls I/O throughput, and AutoStore commits state at power-down without host intervention. Designers connect the HSB pin to the controller supervisor to also trigger a software STORE on graceful shutdown, and should budget the 8 ms-class STORE window in the firmware shutdown sequence.
推荐
Networking Equipment Fast Reboot
Routers, switches, and telecom line cards use the CY14B104NA to retain routing tables, license data, and configuration snapshots so a reboot can restore service in seconds. The 25 ns parallel access lets the CPU reload state immediately at power-up without reading through a serial EEPROM bottleneck, and the QuantumTrap cells retain data for years unpowered. In redundant systems the hardware STORE via HSB provides a deterministic commit point for synchronized failover state. The 44-TSOP II footprint allows two-layer routing under the part with controlled-length address traces; designers should verify bus turnaround timing since STORE cycles block SRAM access momentarily during power transitions.
推荐
Automotive Event Data Recorder
Automotive-qualified CY14B104NA variants serve event data recorders and body-control modules where crash records, odometer data, and fault codes must be captured at SRAM speed and survive key-off without battery backup. The dedicated automotive datasheet from Infineon documents the low-voltage protection: below VSWITCH all externally initiated STORE and write operations are inhibited, preventing corruption during cold-crank and load-dump transients. The device occupies the MCU parallel bus with standard SRAM timing, and the wide industrial-to-automotive temperature coverage supports underhood and cabin locations. Layout should keep the VCAP network close to the device so AutoStore completes despite battery disconnect.
推荐
Medical Instrument Calibration Storage
Laboratory and medical instruments use the CY14B104NA to store calibration curves, patient-session settings, and audit-trail counters that change frequently but must persist across power cycles and transport. The 25 ns SRAM access allows the main processor to update calibration data in real time during self-calibration routines, while AutoStore guarantees the latest calibration is committed when the instrument is unplugged - critical for devices moved between rooms. Battery-free retention removes lithium-cell maintenance, simplifying compliance logistics. The 256K x 16 organization suits 16-bit DSP buses, and software STORE via the address sequence lets firmware create explicit checkpoints at the end of each calibration procedure.
推荐
Smart Metering and IoT Gateway
Energy meters and IoT gateways use the CY14B104NA for tamper counters, load-profile ring buffers, and provisioning secrets that must be written continuously and retained through outages and tamper events. SRAM-speed writes allow per-interval energy accumulation without wear concerns, contrasting with Flash meters that must batch writes to limit erase cycles. AutoStore commits the profile automatically at power-down, and low-voltage inhibition below VSWITCH blocks writes during deliberate brownout tampering. The 4-Mbit density holds months of interval data at 256K x 16, and the 44-TSOP II package is easily sourced and inspected for utility-grade supply chains. Pair with a supervisor IC that leaves HSB free for hardware STORE.
推荐
推荐产品汇总
工程参考数据： CY14B104NA ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY14B104NA-ZS25XI | CY14B104NA-ZS20XI | CY14B104NA-ZS45XI | CY14B104NA-ZSP45XI | MR2A16AYS35 | CY14B104LA-25ZSXI |
|---|---|---|---|---|---|---|---|
| Package | 44-TSOP II | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP2 - same | 44-TSOP II - same |
| Brand | Infineon Technologies (Cypress) | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Everspin | Infineon Technologies |
| Access Time | 25 ns | 25 ns | 20 ns | 45 ns | 45 ns | 35 ns | 25 ns |
| Memory Organization | 256K x 16 | 256K x 16 | 256K x 16 | 256K x 16 | 256K x 16 | 1M x 16 MRAM | 512K x 8 |
| Memory Technology | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | MRAM (TMR cell) | QuantumTrap nvSRAM |
| AutoStore / STORE Cycle | Yes (HW + SW + AutoStore) | Yes | Yes | Yes | Yes | Not required (intrinsically nonvolatile) | Yes |
关键差异点
- Fastest SRAM-speed writes with automatic nonvolatile commit （对比 MR2A16AYS35)
- Lower cost at reduced speed （对比 CY14B104NA-ZS20XI)
- Extended-temperature availability in the identical footprint （对比 CY14B104NA-ZS25XI)
设计说明
AutoStore depends on the external VCAP capacitor: during power-down the device harvests charge from VCAP to complete the STORE cycle, which takes on the order of 8 ms for this family (estimated from QuantumTrap family behavior; confirm exact tSTORE in the Infineon datasheet). Place the specified low-ESR capacitor directly at the VCAP pin, and ensure system bulk capacitance decays VCC through VSWITCH slowly enough that the supervisor does not gate HSB before STORE completes.
The device inhibits all externally initiated STORE and write operations when VCC falls below VSWITCH. Designs that assert CE/WE via a power-good signal must account for this; otherwise the MCU may report failed writes during brownout. Additionally, an 8 ms-class STORE blocks SRAM access - watchdog timeouts of less than 10 ms on shutdown paths can falsely trip. Verify per the manufacturer datasheet rather than relying on typical figures.
Keep the 44-TSOP II address/data traces under 10 cm and series-terminate if bus speeds exceed 50 MHz to control ringing on the 25 ns access window. Use a solid ground plane beneath the device, one 0.1 uF ceramic per supply pin plus 10 uF bulk, and route VCAP away from switching-regulator nodes. Do not place the HSB trace adjacent to high-dV/dt signals since it drives the hardware STORE function.
For 20/25 ns grades, close timing against the datasheet tAA/tACE values at your worst-case temperature grade; the 45 ns parts provide generous margin and can substitute in slower systems as a cost reduction. When substituting the Everspin MR2A16AYS35 MRAM, re-verify cycle timing because MRAM has no STORE stalls but slightly different read/write margins than QuantumTrap nvSRAM.
合规信息
Automotive nvSRAM variants of CY14B104NA exist per the Infineon automotive datasheet, but explicit RoHS/REACH/lead-free declarations were not present in the provided web data.
