IMLT65R040M2HXTMA1 vs IMLT65R060M2HXTMA1 比較
詳細な並列比較: IMLT65R040M2HXTMA1 メーカー: Infineon および IMLT65R060M2HXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IMLT65R040M2HXTMA1 | IMLT65R060M2HXTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.25 | $5.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | — |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| 動作接合温度 | -55 °C to +150 °C | — |
| パッケージ | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-6 (TOLT) with .XT interconnection |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | JEDEC-qualified for Industrial Applications |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Series | — | CoolSiC™ G2 |
| Typical RDS(on) | — | 60 mΩ |
| Maximum RDS(on) | — | 73 mΩ |
| Continuous Drain Current (Tc) | — | 40 A |
| パルスドレイン電流 | — | 96 A |
| Total Power Dissipation (Tc) | — | 200 W |
| Total Gate Charge (Qg) | — | 18 nC |
| Gate-Drain Charge at 400 V (Qgd) | — | 36 nC |
| Output Capacitance Stored Energy at 400 V (Eoss) | — | 4.8 µJ |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (benchmark) |
| ピン数 | — | 16 |