IMLT65R060M2HXTMA1 - 650V 60mΩ SiC MOSFET 40A | Infineon
MPN: IMLT65R060M2HXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $9.85 | $9.85 |
| 10 | $8.92 | $89.20 |
| 100 | $7.65 | $765.00 |
| 500 | $6.42 | $3,210.00 |
| 1,000 | $5.18 | $5,180.00 |
IMLT65R060M2HXTMA1 Overview
A Silicon Carbide MOSFET is a wide-bandgap power transistor that switches much faster and loses far less energy than equivalent silicon MOSFETs or IGBTs. The SiC die technology enables higher blocking voltage, higher switching frequency, higher operating temperature, and dramatically lower switching and conduction losses, placing SiC MOSFETs in the power semiconductor hierarchy below traditional silicon MOSFETs but above GaN HEMTs in typical 650 V-1700 V power-conversion applications.
Key features include an ultra-low switching loss design, a benchmark gate threshold voltage VGS(th) of 4.5 V, robust behavior against parasitic turn-on even with 0 V turn-off gate bias, and a flexible driving scheme that supports both unipolar and bipolar gate drive. The 4.5 V VGS(th) eliminates the need for a negative supply rail in many designs. The integrated body diode is rated for robust hard-commutation events, simplifying half-bridge and full-bridge topologies.
The CoolSiC™ G2 architecture combines Infineon's 2nd-generation SiC trench technology with the .XT interconnection process, which replaces conventional bond-wire source connections with a top-side metal clip. This dramatically reduces source inductance and on-state resistance contribution from the package, improving thermal performance and enabling the 96 A pulsed current rating.
Typical applications include telecom and server SMPS, photovoltaic string inverters and micro-inverters, energy-storage DC-DC stages, on-board chargers for electric vehicles, industrial motor drives, and high-frequency LLC and totem-pole PFC converters. The 650 V rating provides comfortable margin for 400 V bus systems, while the 60 mΩ RDS(on) targets sub-10 kW power levels.
When designing with this device, note that the source and driver-source pins are NOT interchangeable - swapping them can cause malfunction. Use a Kelvin-source connection to fully exploit the low-inductance package, and follow Infineon's gate-drive layout guidance for 18 V/0 V or 18 V/-3 V bipolar drive schemes. Source and driver source pins must remain physically separate on the PCB.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, optimized for both engineer decision-making and AI search-engine citation.
Drop-in alternatives for IMLT65R060M2HXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IMLT65R060M2HXTMA1 (same form factor and footprint) — differing in Package, Qualification, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IMLT65R040M2HXTMA1
✅ Drop-In✓ In Stock
$4.25 / Unit
View Datasheet →IMLT65R060M2H
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IMLT65R060M2HXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™ G2 |
| Technology | Silicon Carbide (SiC) MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Typical RDS(on) | 60 mΩ |
| Maximum RDS(on) | 73 mΩ |
| Continuous Drain Current (Tc) | 40 A |
| Pulsed Drain Current | 96 A |
| Total Power Dissipation (Tc) | 200 W |
| Total Gate Charge (Qg) | 18 nC |
| Gate-Drain Charge at 400 V (Qgd) | 36 nC |
| Output Capacitance Stored Energy at 400 V (Eoss) | 4.8 µJ |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) |
| Package | PG-HDSOP-16-6 (TOLT) with .XT interconnection |
| Mounting Type | Surface Mount |
| Pin Count | 16 |
| Qualification | JEDEC-qualified for Industrial Applications |
IMLT65R060M2HXTMA1 Pin Configuration
| Pin 1 | GATE — Gate control input (drive from isolated gate-driver output) |
| Pin 2 | SS — Driver Source (Kelvin source - MUST be used as gate-drive return) |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | DRAIN — Drain (high-voltage switching node, top-side tab connection) |
| Pin 8 | DRAIN — Drain (high-voltage switching node, top-side tab connection) |
| Pin 9 | DRAIN — Drain (high-voltage switching node, top-side tab connection) |
| Pin 10 | DRAIN — Drain (high-voltage switching node, top-side tab connection) |
| Pin 11 | SOURCE — Source (power return path - NOT interchangeable with SS) |
| Pin 12 | SOURCE — Source (power return path - NOT interchangeable with SS) |
| Pin 13 | SOURCE — Source (power return path - NOT interchangeable with SS) |
| Pin 14 | SOURCE — Source (power return path - NOT interchangeable with SS) |
| Pin 15 | DRAIN — Drain (high-voltage switching node, top-side tab connection) |
| Pin 16 | DRAIN — Drain (high-voltage switching node, top-side tab connection) |
Safe Operating Area - IMLT65R060M2HXTMA1
Typical Applications
IMLT65R060M2HXTMA1 is suitable for 6 applications: Telecom and Server SMPS, Photovoltaic String Inverters, On-Board EV Chargers, Industrial Motor Drives, Energy-Storage DC-DC Converters, High-Frequency LLC and Totem-Pole PFC.
Telecom and Server SMPS
The IMLT65R060M2HXTMA1's 650 V VDS rating, 60 mΩ RDS(on), and 18 nC Qg make it a strong fit for 3-6 kW telecom and server switched-mode power supplies targeting 80 PLUS Titanium efficiency. The CoolSiC™ G2 die enables totem-pole PFC stages running at 100-200 kHz with 99% efficiency, eliminating the need for bridgeless silicon rectifiers and shrinking magnetics. The .XT top-side interconnection clip reduces source inductance to enable clean switching at these high dV/dt levels. Compared to a silicon MOSFET, the SiC die cuts switching loss by 60-70% at the same frequency, allowing a smaller heatsink or fanless operation in 1U server form factors.
Recommended
Photovoltaic String Inverters
In 5-10 kW residential and commercial photovoltaic string inverters, the IMLT65R060M2HXTMA1 handles the boost-stage and DC-AC inverter switching at high DC-bus voltages up to 600 V with comfortable 650 V margin. The CoolSiC™ G2's benchmark 4.5 V VGS(th) prevents parasitic turn-on in half-bridge configurations during long motor-cable or PV-arc-fault events, while the robust body diode withstands hard commutation events that occur during MPPT step changes. The 96 A pulsed current rating allows single-device-per-switch designs up to ~6 kW, reducing BOM cost and gate-driver count versus paralleled MOSFET solutions typical at this power level.
Recommended
On-Board EV Chargers
The IMLT65R060M2HXTMA1 is well-suited for 6.6 kW to 11 kW on-board EV chargers targeting the 400 V EV bus, where its 650 V VDS provides the necessary derating margin under worst-case load-dump transients. The CoolSiC™ G2 technology enables PFC + LLC topologies operating above 200 kHz, shrinking transformer and filter inductor size by 3-4x versus silicon-IGBT-based designs. The .XT package's top-side metal clip directly attaches to a top-side heatsink, allowing double-sided cooling in space-constrained automotive enclosures. While this part is JEDEC-industrial qualified rather than AEC-Q101 automotive, the same die family with automotive qualification is available on request.
Recommended
Industrial Motor Drives
In 400 V-class industrial variable-frequency drives up to 7.5 kW, the IMLT65R060M2HXTMA1 delivers the switching speed and thermal headroom required for high-dynamic-response servo applications. The CoolSiC™ G2 die switches at 50 kHz with full 40 A load and only 200 W package dissipation, enabling smaller heatsinks and sealed IP65 enclosures where dust and oil preclude fan cooling. The 4.8 µJ Eoss at 400 V reduces turn-on losses that dominate motor-drive waveforms, and the device's robust body diode tolerates the regenerative-braking hard-commutation events without requiring anti-parallel silicon diodes. The PG-HDSOP-16-6 package footprint is compatible with standard 3-phase inverter daughterboards.
Recommended
Energy-Storage DC-DC Converters
Bidirectional DC-DC converters for battery energy-storage systems (BESS) at the 50-150 V battery / 400 V DC-bus interface benefit from the IMLT65R060M2HXTMA1's 650 V blocking voltage and 96 A pulsed current rating. The CoolSiC™ G2 enables CLLC resonant topologies at 100-150 kHz with round-trip efficiencies above 97%, critical for BESS levelized-cost-of-storage targets. The .XT top-side package interconnection minimizes source inductance, allowing the SiC die to switch with 50 V/ns dV/dt without gate-ringing failures that plague bond-wire-packaged competitors. The low 4.5 V VGS(th) supports unipolar 18 V/0 V drive, simplifying the isolated gate-drive supply.
Recommended
High-Frequency LLC and Totem-Pole PFC
The IMLT65R060M2HXTMA1 is purpose-built for high-frequency LLC and totem-pole PFC stages where its 18 nC Qg and 4.8 µJ Eoss at 400 V directly translate to lower switching loss. In a 3 kW totem-pole PFC, the CoolSiC™ G2 device runs critical-conduction mode at 100-150 kHz with peak efficiencies of 99.2%, eliminating the input bridge rectifier common to conventional PFC topologies. The 60 mΩ RDS(on) keeps conduction loss manageable at full load, while the 200 W power dissipation rating provides thermal headroom for 3-5 kW designs without forced-air cooling. Use the Kelvin-source (SS) pin connection to fully exploit the .XT package's low-inductance design.
Recommended
Recommended Products Summary
Engineering reference data for IMLT65R060M2HXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMLT65R040M2HXTMA1 | IMLT65R060M2H |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-HDSOP-16-6 (TOLT) | PG-HDSOP-16-6 (TOLT) - same | PG-HDSOP-16-6 (TOLT) - same |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V |
| Typical RDS(on) | 60 mΩ | 40 mΩ | 60 mΩ |
| Continuous Drain Current | 40 A | 52 A | 40 A |
| Total Gate Charge (Qg) | 18 nC | 26 nC | 18 nC |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | 4.5 V | 4.5 V |
| Technology Generation | CoolSiC™ G2 (2nd gen) | CoolSiC™ G2 | CoolSiC™ G2 |
| XT Top-Side Interconnection | Yes | Yes | Yes |
Key Differentiators
- Benchmark 4.5 V gate threshold voltage simplifies unipolar drive (vs STMicroelectronics SCT06065L5HR)
- .XT top-side interconnection clip reduces source inductance vs bond-wire packages (vs IMLT65R060M2H in standard TOLL package)
- Same-package drop-in upgrade path to lower RDS(on) (vs IMLT65R040M2HXTMA1)
Design Notes
Estimated: The Infineon CoolSiC™ G2 datasheet explicitly warns that the source (S) and driver-source (SS) pins are NOT interchangeable. Use a dedicated Kelvin-source trace from pin 2 (SS) directly to the gate-driver ground reference, kept physically separate from the power-source current path on pins 11-14. A 5 mm trace between SS and the gate-driver return adds ~5 nH of gate-loop inductance, which can cause gate-ringing and potential shoot-through at the 50 V/ns dV/dt levels typical of SiC switching.
Estimated: At full 40 A continuous current and 200 W package dissipation with no heatsink, the junction temperature would exceed the 150 °C rating. The PG-HDSOP-16-6 package has a top-side exposed tab designed for direct attachment to a top-side heatsink or cold plate. For continuous operation above 20 A, mount a 4-6 W/K heatsink and ensure the PCB bottom thermal pad connects to a 50x50 mm minimum copper pour for effective double-sided cooling.
Recommended: Although the IMLT65R060M2HXTMA1's 4.5 V VGS(th) supports unipolar +18 V/0 V drive for simple designs, Infineon recommends +18 V/-3 V bipolar drive for applications with hard-switched half-bridge transitions or long motor-cable scenarios. The negative drive prevents parasitic turn-on due to miller-effect induced gate voltage rise. Use a gate-driver IC with minimum 4 A peak sink/source current (e.g., Infineon 1ED3127MU12H or 1EDN7116G) and 5 Ω gate resistor for clean switching.
Critical: Never exceed the absolute maximum VDS of 650 V - the device has no avalanche rating and avalanche breakdown will permanently damage the SiC die. Maintain at least 50 V derating below 650 V under all transient conditions including bus-voltage overshoot during load-step, inductive kickback from unclamped inductive loads, and lightning-surge events in outdoor applications. Add a TVS clamp or active snubber across the drain-source to clamp transients below 600 V in harsh environments.
Compliance Information
JEDEC-qualified for Industrial Applications per Infineon datasheet. Not AEC-Q100 qualified - select the AEC-Q100 automotive variant for EV/traction applications. RoHS and REACH compliant per Infineon product page. The SiC die itself is lead-free and halogen-free by SiC process nature.
