IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon
部品番号: IPD380P06NMATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.83 | $8.30 |
| 100 | $0.74 | $74.00 |
| 500 | $0.66 | $330.00 |
| 1,000 | $0.58 | $580.00 |
| 3,000 | $0.49 | $1,470.00 |
IPD380P06NMATMA1 概要
A P-channel MOSFET (PMOS) is a voltage-controlled majority-carrier device in which the drain-source channel consists of p-type carriers. When the gate is pulled below the source by a sufficient negative Vgs, the channel conducts; returning the gate to the source potential (or higher) turns the device off. PMOS devices sit in the same transistor taxonomy as N-channel MOSFETs (NMOS) and junction FETs (JFET), but their inherent source-following nature makes them especially attractive for high-side load switching, reverse-polarity protection (RPP), and battery management where the system ground is shared. The P-channel OptiMOS family from Infineon targets 40 V to 100 V applications, reducing design complexity versus discrete N-channel + charge-pump solutions.
Key specifications include a 60 V drain-source breakdown (V(BR)DSS), 35 A continuous Id at 25 C case, low on-resistance that simplifies thermal budgets at moderate loads, logic-level gate compatibility, and fast switching for PWM and high-frequency load-shedding. The trench-cell architecture reduces both R_DS(on) and gate charge (Qg), improving conduction and switching efficiency simultaneously. Avalanche ruggedness is rated per the manufacturer datasheet, making the part suitable for inductive load dump on automotive 12 V/24 V buses.
The PG-TO252-3 (DPAK) footprint uses a large exposed tab that doubles as the drain terminal and a thermal dissipation path. With proper PCB copper-pour sizing (typically 1-2 square inches of 2 oz copper), the part can sustain significant continuous current without external heatsinking. Internal construction uses a wire-bond-free or optimized-bond layout that lowers package parasitals versus legacy DPAK generations.
Typical applications include reverse-polarity protection in 12 V/24 V automotive systems, high-side load switches for body-control modules (BCM), battery management systems (BMS) charge/discharge paths, DC-DC converter high-side switches, motor drive H-bridges, hot-swap / inrush limiting, and USB-PD / power-mux rails. The 60 V rating provides ample headroom above the 24 V automotive transient envelope (ISO 7637-2 pulses) while remaining cost-effective.
When designing in this part, ensure adequate Vgs drive (typically -10 V for lowest R_DS(on), with -4.5 V acceptable at logic-level gate), minimize gate-loop inductance to control dV/dt ringing, and verify SOA against worst-case Vds and Id combinations including avalanche energy during inductive turn-off.
ドロップイン代替品: IPD380P06NMATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPD380P06NMATMA1 （同一形状・フットプリント） — 相違点: Package, Operating Temperature Range, Technology, RoHS Status, Drain-Source Voltage (VDS) Max.
クイック比較ツール — 並列比較する代替部品を選択:
IPD380P06NMA
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSZ180P03NS3EGATMA1
✅ ドロップイン✓ 在庫あり
$0.45 / 個
データシートを見る →BSZ065N06LS5ATMA1
✅ ドロップイン✓ 在庫あり
$0.62 / 個
データシートを見る →VBE2625
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR5305TRPBF
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IPD90N06S407ATMA2
✅ ドロップイン✓ 在庫あり
$0.84 / 個
データシートを見る →IPD380P06NMATMA1 最大定格＆電気的特性
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage V(BR)DSS | 60 V |
| 連続ドレイン電流（TC=25°C） | 35 A |
| Power Dissipation (Tc) | 125 W |
| Technology | OptiMOS P-channel trench |
| パッケージ | PG-TO252-3 (DPAK), surface mount |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55 C to +150 C (junction) |
| Gate Drive | Logic-level compatible |
| Avalanche Rated | Yes (per manufacturer datasheet) |
| RoHS ステータス | Compliant |
| MSLレベル | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch |
| Lead-Free | Yes |
IPD380P06NMATMA1 ピン構成
| ピン 1 | GATE — Gate drive input (logic-level compatible) |
| ピン 2 | DRAIN — Drain terminal (also exposed tab) |
| ピン 3 | SOURCE — Source terminal |
主な用途
IPD380P06NMATMA1 の用途: 6 件s: Reverse-Polarity Protection (RPP), High-Side Load Switch, Battery Management System (BMS) Charge/Discharge Path, DC-DC Converter High-Side Switch, Motor Drive H-Bridge (Low-Side / High-Side Pair), Hot-Swap / Inrush Limiting.
Reverse-Polarity Protection (RPP)
The IPD380P06NMATMA1 is explicitly targeted by Infineon for reverse-polarity protection in 12 V and 24 V automotive and industrial systems. Place source at the input supply and drain at the load, gate tied through a resistor to ground. Under correct polarity the P-channel conducts with minimal loss; under reverse polarity it self-biases off within microseconds, blocking fault current. The 60 V V(BR)DSS exceeds ISO 7637-2 load-dump transients, and 35 A Id comfortably handles cranking inrush on automotive buses.
おすすめ
High-Side Load Switch
Use the IPD380P06NMATMA1 as a high-side switch in body-control modules (BCM) and industrial control, where its P-channel polarity eliminates the charge pump required by N-channel high-side designs. Drive the gate to ground through a resistor to turn on; pull the gate to the source rail (logic-level compatible) to turn off. The 35 A current rating and 125 W power dissipation support relay-replacement duties in 12 V/24 V systems. Fast switching and low Qg minimize drive losses and PWM switching losses at high duty cycles.
おすすめ
Battery Management System (BMS) Charge/Discharge Path
The IPD380P06NMATMA1 fits Li-ion and lead-acid BMS charge/discharge MOSFET positions where P-channel topology simplifies the protection FET arrangement and reduces system BOM. Its 60 V rating covers multi-cell battery packs up to 12s Li-ion (50.4 V max), and the 35 A continuous Id handles pack-level charge and discharge currents. Logic-level gate drive interfaces directly to BMS AFE ICs without level shifting. Avalanche ruggedness protects against the inductive kickback of motor and relay loads in the same battery system.
おすすめ
DC-DC Converter High-Side Switch
In buck and buck-boost converters where the high-side switch must block the full input rail, the IPD380P06NMATMA1 simplifies gate drive by replacing an N-channel plus bootstrap or charge pump with a directly driven P-channel. The 60 V V(BR)DSS supports 24 V industrial bus converters and 48 V telecom point-of-load rails with margin. Low Qg reduces switching losses and improves efficiency at high switching frequencies (100 kHz to 1 MHz), making it suitable for compact POL modules.
おすすめ
Motor Drive H-Bridge (Low-Side / High-Side Pair)
Pair two IPD380P06NMATMA1 devices as high-side switches with N-channel low-side switches to form a complete H-bridge for small DC and stepper motors in 12 V/24 V systems. The P-channel high-side simplifies the gate drive to a simple low-side logic signal; the 35 A rating handles stall currents of typical sub-100 W brushed motors. Fast switching enables PWM speed control up to 25 kHz without significant switching loss. The DPAK package allows compact PCB layout.
おすすめ
Hot-Swap / Inrush Limiting
Insert the IPD380P06NMATMA1 between a live backplane and a downstream load card to limit inrush current during hot insertion. Drive the gate through a soft-start RC network so that Vgs ramps slowly, causing the P-channel to behave as a controlled current source during turn-on. The 60 V V(BR)DSS handles 48 V telecom backplanes; the 35 A Id supports full-load steady-state after the inrush event. Avalanche ruggedness absorbs the energy stored in cable and PCB inductance during controlled turn-off.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPD380P06NMATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPD380P06NMA | BSZ180P03NS3EGATMA1 | VBE2625 | IRFR5305TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TSDSON-8 - footprint differs | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | 60 V | 60 V | 30 V | 60 V | 55 V |
| Technology Family | OptiMOS P-channel trench | OptiMOS P-channel trench | OptiMOS P-channel | Trench P-channel | HEXFET P-channel |
| Target Application | RPP, load switch, BMS | RPP, load switch, BMS | Battery management, load switch | Drop-in replacement for IPD380P06NMATMA1 | Load switch, DC-DC |
主な差別化要因
- OptiMOS P-channel trench technology for low R_DS(on) and Qg （vs IRFR5305TRPBF)
- Logic-level gate drive compatible （vs BSZ180P03NS3EGATMA1)
- 60 V rating matches 24 V industrial and 48 V telecom rails （vs IPD380P06NMA)
設計ノート
Estimated: at Pd=10 W steady state with the PG-TO252-3 (DPAK) thermal pad soldered to 2 oz copper over approximately 1 square inch of board area, junction-to-ambient thermal resistance is roughly 40-50 C/W. The case temperature rise above ambient will be Pd * Rth, so 10 W dissipating 1 W per C of Rth yields a 10-15 C rise. For continuous operation near 35 A on 24 V rails, design with 2-3 square inches of copper or add a small clip-on heatsink to keep Tj below 125 C.
Minimize gate-loop inductance by routing the gate trace directly from the controller output to pin 1 with the shortest possible path, and place a 10 kOhm gate-source pull-down resistor within 5 mm of the gate pin. The drain tab (pin 2) must be soldered to a continuous copper pour that extends beyond the immediate package footprint to act as a thermal heatsink. Use multiple thermal vias under the tab to lower the junction-to-case thermal resistance, typically 6-9 vias of 0.3 mm drill filled with solder.
Do not drive the gate above the source voltage by more than +/- 20 V - the gate oxide absolute maximum is typically +/- 20 V. Do not parallel this P-channel with another without considering R_DS(on) matching and thermal coupling; parallel mismatched devices can lead to thermal runaway. Finally, do not omit the gate-source resistor - without it, the gate can float during system power-up and cause partial turn-on with potentially destructive shoot-through in half-bridge topologies.
コンプライアンス情報
RoHS and lead-free confirmed per Infineon product page; AEC-Q100 automotive grade not specified in provided data excerpt - verify with Infineon for safety-critical automotive designs.
