IRL2910STRLPBF - 100V 55A Logic-Level N-Channel MOSFET | Infineon
部品番号: IRL2910STRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
IRL2910STRLPBF 概要
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a switch or amplifier in power and signal circuits. Logic-level MOSFETs like the IRL2910 are a sub-category optimized for direct drive from microcontroller GPIO pins (3.3V or 5V) without requiring gate-driver stages. Within the broader taxonomy, MOSFETs sit under transistors, then under discrete semiconductors, then under electronic components.
Key features include a logic-level gate threshold (VGS(th) typically around 1V-2V), avalanche-rated ruggedness, and a continuous drain current of 55A at 25C case temperature with linear derating to higher temperatures. The D2PAK package offers an exposed metal tab that functions as a heatsink surface, supporting the 3.8W power dissipation at TA and up to 200W at TC. This combination of low Rds(on), high current, and surface-mount convenience enables compact designs replacing larger through-hole TO-220 parts.
Architecturally, the IRL2910 uses Infineon's HEXFET cell structure, which provides low gate charge and fast switching. The logic-level gate drive enables direct connection to MCUs and low-voltage gate drivers in battery-powered and 12V automotive systems. The 26 mOhm Rds(on) at 10V VGS keeps conduction losses low in high-current paths such as motor windings and synchronous-rectifier stages.
Typical applications include 12V and 24V brushless DC (BLDC) motor drives, solenoid drivers, high-current load switches in industrial automation, synchronous rectification in switch-mode power supplies (SMPS), and Class-D audio amplifier output stages. The combination of logic-level drive and high current makes it especially attractive in audio amplifier output stages where it is often seen in legacy and DIY designs.
When designing with this MOSFET, ensure adequate heatsinking via PCB copper area connected to the D2PAK tab. Switching losses dominate in PWM applications above 50 kHz; gate-drive resistance should be sized to control dV/dt. Always check SOA (Safe Operating Area) for pulsed loads to avoid second-breakdown failure.
This page synthesizes distributor pricing, drop-in alternatives from verified cross-reference data, and practical PCB layout notes not found in the bare manufacturer datasheet.
ドロップイン代替品: IRL2910STRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRL2910STRLPBF （同一形状・フットプリント） — 相違点: Technology, Package, Mounting Type, Configuration, Lead-Free / RoHS.
クイック比較ツール — 並列比較する代替部品を選択:
IRL2910STRRPBF
✅ ドロップイン✓ 在庫あり
$0.95 / 個
データシートを見る →IRL2910SPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFB7545PBF
✅ ドロップイン✓ 在庫あり
$0.95 / 個
データシートを見る →IRF1310NSTRLPBF
✅ ドロップイン✓ 在庫あり
$0.84 / 個
データシートを見る →FQB55N10
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BUK9615-100A
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRL2910STRLPBF 最大定格＆電気的特性
| トランジスタタイプ | N-Channel MOSFET |
| Technology | HEXFET (Infineon/IR) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 55 A |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) |
| Total Gate Charge (Qg) | 93.3 nC |
| Power Dissipation @ TA=25C | 3.8 W |
| Power Dissipation @ TC=25C | 200 W |
| パッケージ | D2PAK (TO-263) Surface Mount |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +175C (TJ) |
| RoHS ステータス | Compliant |
| ハロゲンフリー | Compliant (per GlobalSpec) |
IRL2910STRLPBF ピン構成
| ピン 1 | Gate — Gate input (logic-level drive) |
| ピン 2 | Drain — Drain terminal; electrically connected to metal tab/back |
| ピン 3 | Source — Source terminal (low-side reference) |
| ピン Tab | Drain — Metal tab - electrically Drain, also main thermal mounting surface |
安全動作領域 (Estimated from datasheet limits)
主な用途
IRL2910STRLPBF の用途: 6 件s: Brushless DC (BLDC) Motor Drive, Class-D Audio Amplifier Output Stage, Synchronous Rectification in SMPS, High-Current Solenoid and Relay Driver, Battery Protection and Load Switching, Automotive 12V/24V Load Switch.
Brushless DC (BLDC) Motor Drive
The IRL2910STRLPBF is well-suited for 24V-48V brushless DC motor drive half-bridge and three-phase inverter stages. Its 100V VDS rating provides ample headroom over typical 24V bus voltages including back-EMF spikes, while the 55A continuous drain current handles motor inrush and stall currents. The logic-level VGS(th) allows direct gate drive from 3.3V or 5V MCUs, eliminating external gate drivers and reducing BOM cost. Low Rds(on) of 26 mOhm at 10V VGS minimizes conduction losses and heat generation, allowing smaller heatsinks in compact motor-control PCBs used in drones, e-bikes, and industrial pumps.
おすすめ
Class-D Audio Amplifier Output Stage
The IRL2910STRLPBF is a popular choice for legacy and DIY Class-D audio amplifier output stages, often seen in pairs as a complementary half-bridge. Its logic-level gate threshold allows direct drive from low-voltage modulator ICs, while 55A continuous current comfortably handles speaker transient peaks. The 26 mOhm Rds(on) keeps conduction losses low enough to drive 4-ohm speakers at high power without excessive heatsinking. In this role it pairs with complementary P-channel logic MOSFETs in the high-side position, and benefits from the D2PAK tab being soldered to substantial PCB copper for thermal dissipation.
おすすめ
Synchronous Rectification in SMPS
In switch-mode power supplies, the IRL2910STRLPBF serves as a synchronous rectifier on the secondary side of 24V-48V isolated converters, replacing Schottky diodes to reduce conduction losses. Its low 26 mOhm Rds(on) at 10V VGS yields higher efficiency at high output currents above 20A. The 93.3 nC total gate charge requires careful gate-drive design at high switching frequencies above 100 kHz, but for sub-100 kHz industrial SMPS the part performs well. Logic-level gate drive simplifies secondary-side controller interface and reduces driver power dissipation.
おすすめ
High-Current Solenoid and Relay Driver
Industrial solenoid and relay driver circuits benefit from the IRL2910STRLPBF's 55A pulsed drain current capability and logic-level gate drive. In 24V and 48V industrial automation systems, the MOSFET switches inductive loads with low Rds(on) to minimize heat and maximize switch life. The 100V VDS rating easily absorbs the back-EMF of typical 24V solenoids, often eliminating the need for external freewheeling diodes when paired with a clamp. The D2PAK surface-mount package enables automated assembly and high-density PCB layouts in industrial control modules.
おすすめ
Battery Protection and Load Switching
Battery management systems in 24V-48V lithium battery packs use the IRL2910STRLPBF as a high-side or low-side disconnect switch. Its 55A continuous current rating handles high-power pack discharge currents, and the 100V VDS provides safety margin above nominal pack voltages. Logic-level gate drive enables direct interface with battery monitor ICs operating from 3.3V logic. The D2PAK package allows reflow soldering alongside other SMD components, simplifying pack assembly compared to through-hole alternatives. Rds(on) of 26 mOhm at full enhancement keeps steady-state losses low during normal pack operation.
おすすめ
Automotive 12V/24V Load Switch
The IRL2910STRLPBF operates as a robust load switch in 12V and 24V automotive systems, controlling headlights, fuel pumps, HVAC blowers, and other high-current loads. Its 100V VDS rating easily handles 24V truck and bus systems with load-dump transient margin. The 55A continuous current rating exceeds the inrush of most automotive actuators. Logic-level VGS(th) enables direct drive from automotive microcontrollers operating at 5V or 3.3V, simplifying ECU design. Note: for AEC-Q100 qualified automotive applications, verify with Infineon automotive-grade part numbers rather than the industrial-grade IRL2910STRLPBF.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRL2910STRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRL2910STRRPBF | IRL2910SPBF | IRFB7545PBF | FQB55N10 | BUK9615-100A |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | NXP Semiconductors |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 60 V (lower) | 100 V | 100 V |
| Gate Threshold VGS(th) | Logic-level | Logic-level | Logic-level | Logic-level | Standard | Standard |
主な差別化要因
- Logic-level gate threshold for direct MCU drive （vs FQB55N10)
- Lower gate charge than typical 100V-class logic MOSFETs （vs IRF1310NSTRLPBF)
- Surface-mount D2PAK package enables automated assembly （vs IRFB4110 (TO-220))
設計ノート
The IRL2910STRLPBF dissipates 3.8W at TA=25C and 200W at TC=25C. Estimated: at continuous 20A load and 50 mOhm effective Rds(on) (junction-warmed), dissipation is ~20W, requiring at least 25 sq cm of 2oz copper on the D2PAK tab for TA<=50C operation. Without a heatsink, thermal runaway can occur above ~40C ambient at full rated current. Always check the SOA curve for pulsed loads and use the junction-to-ambient thermal resistance (theta_JA) from the datasheet for your specific PCB layout.
Solder the D2PAK metal tab directly to a large copper pour on the top layer for primary heat extraction, with thermal vias to inner layers for spreading. Recommended: 6-10 thermal vias (0.3mm-0.5mm diameter) under the tab to a 1oz inner-plane copper pour. Keep the gate-drive trace short and away from switching drain nodes to minimize parasitic inductance and gate ringing. Place a 10kohm gate-source pull-down resistor to prevent accidental turn-on during transient events.
For high-current switching paths, use wide copper pours (>=2mm per ampere) on both top and bottom layers for the drain and source loops. Minimize the high-current loop area between drain, source, and decoupling capacitors to reduce parasitic inductance that causes voltage overshoot during switching. Use a Kelvin source connection (separate source-sense trace back to the controller ground) when driving high di/dt loads to avoid source-inductance-induced gate-voltage depression that causes shoot-through in half-bridge configurations.
Do not exceed VGS ratings: maximum gate-source voltage is typically +/-20V for the IRL2910STRLPBF. Driving the gate above 20V destroys the gate oxide. Also avoid operating the part in linear mode (VDS between 0V and full enhancement) for sustained periods: the SOA curve shows that DC operation at mid-VDS is limited to low current. Finally, ensure the gate-drive signal returns to source ground cleanly during turn-off; floating or high-impedance gates can cause partial turn-on and thermal runaway.
コンプライアンス情報
RoHS compliant per Infineon product page. Halogen-free per GlobalSpec datasheet metadata. Not AEC-Q100 qualified - for automotive applications, contact Infineon for automotive-grade part numbers.
