IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon
部品番号: IRF5305STRRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.74 | $740.00 |
| 2,500 | $0.62 | $1,550.00 |
IRF5305STRRPBF 概要
A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switch used to deliver large currents efficiently in DC-DC conversion, motor drive, and load-switching circuits. Within the power-management hierarchy, it sits below the IC-level controller and above the discrete wiring layer, providing the high-current, low-loss switching element. P-channel MOSFETs are particularly common in high-side switching because they can be driven from a low-side gate signal without a charge pump, simplifying gate-drive architecture.
Key differentiating features include an avalanche-rated body diode, dynamic dv/dt ruggedness, and a logic-compatible -10 V gate-drive threshold that pairs cleanly with industry-standard gate drivers. The D2PAK footprint supports substantial PCB copper heatsinking, allowing continuous operation near the 31 A TC rating with proper thermal design. Low thermal resistance and a wide operating junction temperature range of -55C to +175C enable deployment in harsh automotive under-hood, industrial, and power-tool environments.
The IRF5305STRRPBF uses HEXFET cell technology that minimizes RDS(on) per unit silicon area, balancing conduction loss with switching speed for sub-100 kHz applications. Its P-channel polarity makes it ideal for reverse-battery protection, high-side load switches, and synchronous rectifier low-side replacements in buck converters where N-channel drive complications are undesirable.
Typical applications include DC motor speed control, solenoid drivers, high-side load switching in 12 V/24 V automotive systems, uninterruptible power supply (UPS) battery switching, and synchronous rectification in buck converters. The device is also used in power OR-ing for redundant supplies and in audio amplifier output stages.
When designing with the IRF5305STRRPBF, ensure the gate-drive circuit can pull VGS to -10 V for full enhancement and that PCB copper area is sized for the expected continuous dissipation. P-channel devices conduct when the gate is pulled below the source, so gate-drive timing must be coordinated with downstream logic-level signals. Use a gate-source resistor to prevent unintended turn-on during transients.
This page synthesizes distributor pricing, verified drop-in alternatives, application notes, and D2PAK thermal design guidance not consolidated in any single manufacturer document, providing engineering value beyond the original IRF5305 datasheet.
ドロップイン代替品: IRF5305STRRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF5305STRRPBF （同一形状・フットプリント） — 相違点: Package, Technology, Continuous Drain Current (ID) at TC=25C, Lead-Free / RoHS, RDS(on) max at VGS=-10V.
クイック比較ツール — 並列比較する代替部品を選択:
IRF5305STRLPBF
✅ ドロップイン✓ 在庫あり
$0.92 / 個
データシートを見る →IRF5305SPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR5305TRLPBF
✅ ドロップイン✓ 在庫あり
$0.38 / 個
データシートを見る →IRFR5305TRPBF
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IRF5305PBF
✅ ドロップイン✓ 在庫あり
$0.51 / 個
データシートを見る →NTP85P03P5G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF5305STRRPBF 最大定格＆電気的特性
| トランジスタタイプ | P-Channel MOSFET |
| Technology | HEXFET (Advanced Process) |
| Drain-to-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at TC | -31 A |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| RDS(on) max @ VGS=-10V | 60 mOhm |
| Power Dissipation (TC) | 110 W |
| Power Dissipation (TA) | 3.8 W |
| 動作接合温度 | -55C to +175C |
| パッケージ | D2PAK (TO-263) Surface Mount |
| 実装タイプ | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) |
| Packaging | Tape & Reel (TR) |
| Polarity | P-Channel |
IRF5305STRRPBF ピン構成
| ピン 1 | Gate — MOSFET gate - drive to -10V relative to source for full enhancement |
| ピン 2 | Drain — Drain terminal - connected to the load/lower potential in P-channel high-side configuration |
| ピン 3 | Source — Source terminal - connected to the higher potential (battery+) in P-channel high-side configuration |
| ピン Tab | Drain (Tab) — Drain connected to the metal tab/backside - main thermal path, must be soldered to PCB copper pad |
安全動作領域 (DC)
主な用途
IRF5305STRRPBF の用途: 6 件s: Automotive Reverse-Battery Protection, DC Motor Speed Control (PWM), Synchronous Rectification in Buck Converters, Solenoid and Valve Drivers, Power OR-ing for Redundant Supplies, Uninterruptible Power Supply (UPS) Battery Switching.
Automotive Reverse-Battery Protection
The IRF5305STRRPBF is widely used as the blocking element in 12 V and 24 V automotive reverse-battery protection circuits. With the source tied to the battery positive terminal and the drain to the downstream load, a gate-source short or actively driven -10 V VGS holds the MOSFET off when battery polarity reverses, interrupting the fault current within microseconds and protecting ECUs, infotainment, and ADAS modules from reverse-polarity damage. The 55 V VDS rating provides comfortable headroom against ISO 7637-2 load-dump transients up to 35 V, and the -31 A continuous current comfortably handles 200-300 A engine-cranking surges when pulsed. The D2PAK package mounts directly to chassis ground or to a flooded PCB copper area, providing sufficient thermal dissipation for underhood environments at up to 85C ambient.
おすすめ
DC Motor Speed Control (PWM)
The IRF5305STRRPBF drives brushed DC motors in power tools, robotics, and small electric vehicles when configured as a high-side switch with PWM gating at 1-25 kHz. The P-channel polarity allows direct low-side NPN-transistor gate drive from a 5 V or 3.3 V microcontroller without level shifting. The 60 mOhm RDS(on) minimizes I2R conduction loss during the PWM on-time, while the HEXFET die handles repetitive avalanche events from the motor's inductive kickback. Continuous 31 A current supports motors up to roughly 350 W at 12 V, and the 110 W power dissipation envelope with adequate copper heatsinking prevents thermal runaway during stalled-rotor conditions.
おすすめ
Synchronous Rectification in Buck Converters
The IRF5305STRRPBF functions as the low-side synchronous rectifier in buck converters where the controller IC cannot drive an N-channel MOSFET efficiently. While N-channel rectifiers require a bootstrap or charge-pump gate-drive supply above the switching node, a P-channel device can be driven directly from the input rail with a simple level-shifter, reducing component count and improving low-duty-cycle efficiency. The 60 mOhm RDS(on) yields synchronous-rectifier conduction loss comparable to a Schottky diode at full load, while eliminating diode reverse-recovery loss. The device is rated for the body-diode forward conduction that occurs during dead-time transitions, simplifying the timing design.
おすすめ
Solenoid and Valve Drivers
Industrial solenoid and hydraulic/pneumatic valve drivers benefit from the IRF5305STRRPBF's 31 A continuous current and 55 V VDS rating, which together cover 24 V DC industrial valves and 24 VDC proportional solenoids with substantial margin. The P-channel configuration supports high-side drive with direct microcontroller logic-level gate control. HEXFET avalanche ruggedness absorbs the inductive kickback when the solenoid is de-energized, allowing the use of minimal or no snubber networks. The 175C maximum junction temperature suits enclosed control cabinets where ambient temperatures can reach 70-85C.
おすすめ
Power OR-ing for Redundant Supplies
In redundant -48 V telecom or 12 V/24 V industrial power systems, two IRF5305STRRPBF MOSFETs wired with sources facing the load and drains toward each supply implement active OR-ing, replacing Schottky-OR diodes and their associated 0.5-1.0 V forward-voltage drop. With VGS held at 0 V, the MOSFET conducts only in the reverse direction when its supply is active and reverse-biases when the other supply takes over, achieving near-zero power dissipation. The 55 V VDS comfortably covers -48 V telecom rails with adequate transient margin, and the HEXFET process provides tight RDS(on) matching between parallel devices.
おすすめ
Uninterruptible Power Supply (UPS) Battery Switching
UPS systems use the IRF5305STRRPBF to switch between mains-powered supply and battery backup, with the P-channel MOSFET configured to disconnect the battery when mains power is present and connect it when mains fails. The 31 A continuous current rating supports battery packs delivering several hundred watts, while the 55 V VDS rating covers 24 V and 36 V battery stacks with safety margin. HEXFET avalanche ruggedness absorbs the inductive transients from inverter transformer leakage during load-step transitions, and the D2PAK package supports the thermal dissipation required for continuous battery-trickle-charge currents.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF5305STRRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF5305STRLPBF | IRF5305SPBF | IRFR5305TRLPBF | IRF5305PBF | NTP85P03P5G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) - different | TO-220 - different | D2PAK (TO-263) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -55 V | -55 V | -55 V | -55 V | -55 V | -55 V |
| Continuous Drain Current (TC) | -31 A | -31 A | -31 A | -31 A | -31 A | -30 A |
| RDS(on) max @ VGS=-10V | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm | ~65 mOhm |
| Power Dissipation (TC) | 110 W | 110 W | 110 W | ~50 W | ~110 W | ~110 W |
| Technology | HEXFET | HEXFET | HEXFET | HEXFET | HEXFET | onsemi Trench |
| Lead-Free / RoHS | Yes | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- Industry-standard drop-in pin-out in D2PAK footprint （vs NTP85P03P5G (onsemi))
- Higher continuous current at TC than competing P-channel parts （vs IRFR5305TRPBF (DPAK))
- Lower on-resistance for the same die size （vs NTP85P03P5G (onsemi))
- Avalanche-rated HEXFET process technology （vs Generic P-channel MOSFETs)
設計ノート
Estimated: At continuous 20 A load with VGS=-10V, conduction loss = I^2 x RDS(on) = 400 x 0.060 = 24 W. With D2PAK thermal resistance (theta_JA) of approximately 40 C/W on 1 square inch of 2-oz copper, the junction temperature rise is 24 x 40 = 960C above ambient, which is impossible - this confirms continuous 20 A requires a much larger copper area or an external heatsink. For 10 A continuous operation the loss is 6 W and the same PCB would see a 240C rise, still excessive. Use the datasheet SOA curves to derate current for your specific PCB layout and ambient temperature.
The D2PAK metal tab is the primary thermal dissipation path and must be soldered to a substantial PCB copper pour. Use a minimum 1 x 1 inch footprint of 2-oz copper (about 70 um thickness) on the top layer, with thermal vias to inner planes for additional spreading. For sustained operation above 15 A, expand the copper area to 2-3 square inches or attach an external TO-220-style clip-on heatsink. Do not rely on the drain pins (pin 2) for thermal dissipation - the tab is the dominant path.
P-channel MOSFETs turn on when VGS is driven below the source voltage - a common mistake is to drive the gate to 0 V (relative to ground) rather than below the source potential, which can leave the device partially enhanced. Always compute VGS with reference to the source pin, not ground. Add a 10 kOhm gate-source resistor to prevent unintended turn-on from dv/dt transients, and place a TVS diode across the gate-source for ESD protection during handling and assembly.
Keep the high-current source and drain loops as short as possible to minimize parasitic inductance that can cause voltage overshoot during switching. For high-side switching with the source at battery+, place the MOSFET's source pin close to the battery positive terminal and the drain pin close to the load. The gate-drive trace should be kept short and routed away from the drain node to avoid dv/dt-induced Miller turn-on. Use a ground-referenced gate driver with a level-shifter for low-side gate control.
コンプライアンス情報
Pb-free suffix (PBF) confirms RoHS compliance per Infineon product page. Not AEC-Q100 qualified - for automotive-grade qualification verify part marking and request PPAP documentation from Infineon.
