IRL2910STRRPBF - 100V, 55A N-Ch MOSFET | Infineon | D2PAK
MPN: IRL2910STRRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.32 | $132.00 |
| 500 | $1.1 | $550.00 |
| 1,000 | $0.95 | $950.00 |
IRL2910STRRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled, majority-carrier switch used for switching and amplifying DC/DC or motor-drive stages; the IRL2910 belongs to the 100 V logic-level N-channel family that bridges standard MOSFETs, logic-level MOSFETs, and high-current discrete switches in the Infineon HEXFET/IR MOSFET power tree. Logic-level VGS(th) variants allow the part to be driven directly from microcontrollers or gate-driver ICs without a bootstrap charge pump.
Key features include a 100 V VDS rating that provides 30%+ headroom over 72 V telecom rails, an ultra-low 26 mΩ Rds(on) at VGS=10 V that minimizes conduction loss at high current, a logic-level VGS(th) of 1.0 V–2.5 V enabling direct MCU/GPIO drive, an avalanche-rated die (200 W power dissipation at TC), and a built-in body diode for half-bridge and synchronous-rectifier topologies. The D2PAK package offers a low 0.5 °C/W junction-to-case thermal resistance, suitable for high-density surface-mount power designs.
Architecturally, the IRL2910 uses a planar HEXFET cell with a vertical DMOS structure, optimized for low Rds(on) per die area and robust avalanche energy handling. The lead-free, RoHS-compliant D2PAK package is qualified to MSL1 for standard reflow profiles. According to the manufacturer datasheet, the part is rated for an operating junction temperature of -55 °C to +175 °C.
Typical applications include DC-DC converters, motor drives (12 V/24 V/48 V brushed and brushless), solenoid/relay drivers, synchronous rectifiers, and high-current load switches. The combination of 100 V rating, 55 A ID, and surface-mount D2PAK also suits industrial automation, telecom secondary-side hot-swap stages, and Class-D audio output stages.
When designing with this device, ensure VGS drive voltage is at least 4 V above VGS(th) for full enhancement; use a gate-driver IC such as IR2109SPBF or IR2110SPBF if the MCU pin cannot source 1 mA peak gate charge. Place the gate resistor (10–100 Ω) close to the gate pin to dampen parasitic ringing, and verify SOA at the worst-case VDS*ID point for pulsed loads. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRL2910STRRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRL2910STRLPBF
✅ Drop-In✓ In Stock
$0.98 / Unit
View Datasheet →IRL2910STRRPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | IR MOSFET™ (Planar HEXFET) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC | 55 A |
| RDS(on) Max at VGS=10 V | 26 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) |
| Power Dissipation (Ta) | 3.8 W |
| Power Dissipation (Tc) | 200 W |
| Configuration | Single with built-in body diode |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount |
| Terminal Finish | Matte Tin over Nickel |
| Lead-Free / RoHS Status | Yes (PBF suffix) |
| MSL Level | 1 (per JEDEC J-STD-020) |
IRL2910STRRPBF Pin Configuration
| Pin 1 | Gate — Gate control input; logic-level threshold (1.0–2.5 V) |
| Pin 2 | Drain — Drain connection; tied to the metal tab on the package body |
| Pin 3 | Source — Source connection; also exposed on the underside thermal pad |
| Pin Tab | Drain (Tab) — Metal tab is electrically connected to Drain (pin 2); also serves as thermal dissipation surface |
Safe Operating Area (DC)
Typical Applications
IRL2910STRRPBF is suitable for 7 applications: DC-DC Converter (Buck/Boost), Brushed DC Motor Drive (H-Bridge), Synchronous Rectifier (Low-Side), Solenoid and Relay Driver, Hot-Swap / Load Switch (48 V Telecom), Class-D Audio Output Stage, Battery Management / Protection Switch.
DC-DC Converter (Buck/Boost)
The IRL2910STRRPBF is well suited as the main switching element in 48 V-to-12 V buck converters for telecom and industrial bus systems. With 100 V VDS headroom, the part tolerates 48 V nominal input plus transient overshoot without avalanche breakdown; the 26 mΩ Rds(on) keeps full-load conduction loss manageable, and the logic-level VGS(th) permits direct drive from a low-side gate driver such as IR2109SPBF. Place the gate resistor (10–33 Ω) close to pin 1, and use the D2PAK tab as a heatsink via 1+ sq-in of copper pour. Estimated power dissipation at 10 A load with 48 V→12 V conversion is roughly P = I² × Rds(on) ≈ 2.6 W, well within the 3.8 W Ta rating when properly cooled.
Recommended
Brushed DC Motor Drive (H-Bridge)
The IRL2910STRRPBF serves as the high-side/low-side switch in 24 V brushed DC motor H-bridges used in industrial automation, robotics, and electric vehicle subsystems. The 55 A continuous rating comfortably handles motor inrush up to 5× nominal current for tens of milliseconds, while the 100 V rating provides margin against regenerative kick-back from inductive loads. Use a bootstrap gate driver such as IR2109SPBF for the high-side switch; add a 1 kΩ pull-down on each gate to prevent unintended turn-on. The D2PAK footprint allows compact surface-mount construction with thermal vias under the tab to spread heat. Estimated junction rise at 20 A continuous, with proper layout, is around 30 °C above ambient—within safe limits.
Recommended
Synchronous Rectifier (Low-Side)
In isolated DC-DC converters and forward/bridge topologies, the IRL2910STRRPBF can serve as the low-side synchronous rectifier, replacing a Schottky diode to improve efficiency. The 100 V VDS rating covers 48 V bus designs with headroom, and the 26 mΩ Rds(on) yields lower conduction loss than equivalent Schottky diodes above 5 A load. The integrated body diode handles dead-time commutation, eliminating the need for an external anti-parallel diode in most cases. Drive the gate synchronously with the primary-side PWM through an isolated gate-driver or digital isolator. Estimated efficiency improvement versus Schottky rectification at 10 A is typically 3–5 percentage points at 48 V→3.3 V conversion.
Recommended
Solenoid and Relay Driver
Industrial solenoid valves, latching relays, and electromagnetic actuators demand robust low-side switching with high peak current and avalanche ruggedness. The IRL2910STRRPBF's 200 W power dissipation rating and avalanche-rated die handle the inductive kick from coil de-energization; place a flyback diode (or use the body diode) across the coil to clamp VDS below 100 V. A single GPIO from a 3.3 V MCU can switch the part via a small gate-driver or even directly at reduced performance, but a dedicated driver like IR2109SPBF ensures fast turn-off and minimal cross-conduction. With 55 A peak handling, one IRL2910STRRPBF can replace banks of smaller MOSFETs in high-current actuator designs.
Recommended
Hot-Swap / Load Switch (48 V Telecom)
Hot-swap controllers in 48 V telecom and -48 V battery-fed systems use a high-current N-channel MOSFET to inrush-limit and disconnect the load. The IRL2910STRRPBF's 100 V rating tolerates the full -48 V telecom bus plus transient ringing, and its 26 mΩ Rds(on) keeps steady-state voltage drop manageable at 30 A continuous load. Use a dedicated hot-swap controller IC to soft-start the MOSFET and protect against overcurrent; the logic-level gate threshold lets you drive it from standard 3.3 V or 5 V hot-swap ICs. The D2PAK package handles inrush transients with proper PCB thermal design. Estimated steady-state dissipation at 30 A is P = 30² × 0.026 ≈ 23 W, requiring substantial copper pour or forced-air cooling.
Recommended
Class-D Audio Output Stage
The IRL2910STRRPBF can be used in the output stage of subwoofer or PA-grade Class-D audio amplifiers, where its 26 mΩ Rds(on) and 55 A peak current capability deliver low distortion and high efficiency. Logic-level gate threshold allows direct drive from audio-modulator gate-driver ICs, while the 100 V VDS provides comfortable headroom for 48 V amplifier rails. The D2PAK package footprint is shared with established audio MOSFETs, simplifying drop-in retrofits. Place gate resistors (4.7–10 Ω) close to each MOSFET to control ringing; a low-inductance bus-bar layout minimizes dead-time distortion. Estimated full-power efficiency at 48 V→4 Ω load is 90–93%, comparable to dedicated audio MOSFETs.
Recommended
Battery Management / Protection Switch
In lithium-ion battery packs and Battery Management Systems (BMS), the IRL2910STRRPBF can serve as a high-current protection disconnect switch. With 55 A continuous and 100 V VDS, the part handles multi-cell battery packs (12s Li-ion ≈ 50 V fully charged) with margin. The logic-level gate threshold allows direct drive from low-voltage BMS ICs, and the built-in body diode simplifies bidirectional topologies. Add a TVS diode across drain-source to clamp inductive transients during disconnect events. Estimated conduction loss at 30 A discharge is P = 30² × 0.026 ≈ 23 W, requiring the D2PAK tab to be soldered to a substantial copper pad with thermal vias for heat extraction.
Recommended
Recommended Products Summary
Engineering reference data for IRL2910STRRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRL2910STRLPBF | IRL2910PBF |
|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | TO-220 (through-hole) |
| Brand | Infineon | Infineon | Infineon |
| VDS Max (V) | 100 V | 100 V | 100 V |
| Continuous ID at TC (A) | 55 A | 55 A | 55 A |
| RDS(on) Max at VGS=10 V (mΩ) | 26 mΩ | 26 mΩ | 26 mΩ |
| Power Dissipation (TC) (W) | 200 W | 200 W | 200 W |
| VGS(th) Range (V) | 1.0–2.5 V (logic-level) | 1.0–2.5 V (logic-level) | 1.0–2.5 V (logic-level) |
| Mounting Style | Surface Mount | Surface Mount | Through-Hole |
Key Differentiators
- Logic-level VGS(th) allows direct MCU drive without gate driver in low-current applications (vs IRF3710 (standard-threshold))
- Surface-mount D2PAK enables high-density PCB designs with strong thermal performance (vs IRL2910PBF (TO-220 through-hole))
- Industry-standard IR MOSFET technology with established second-source compatibility (vs Generic 100 V N-channel MOSFETs)
Design Notes
Estimated: at 20 A continuous drain current and 100% duty, conduction loss P = I² × Rds(on) = 20² × 0.026 = 10.4 W. The D2PAK junction-to-ambient thermal resistance is approximately 62 °C/W with minimum copper, and 35 °C/W with 1 square inch of copper pour. Without forced cooling, junction rise at 10.4 W is roughly 365 °C (minimum copper)—excessive. With 1 sq-in copper, rise drops to ~365 °C, still too high. Use 3+ sq-in copper with thermal vias to a bottom-side heatsink for sustained 20 A operation. For 5 A continuous, 1 sq-in copper suffices.
Use a 10–33 Ω gate resistor in series with pin 1 (Gate) to dampen parasitic ringing from gate-source and gate-drain capacitance. Place this resistor within 5 mm of the gate pin. Add a 10 kΩ pull-down resistor from gate to source to keep the MOSFET off during MCU reset or power-up. The D2PAK drain tab should be soldered to a copper pad at least equal to the package footprint (≈ 0.5 sq-in) plus thermal vias to an internal copper plane for heat extraction. Source: standard D2PAK PCB design guidelines and Infineon application notes.
Do not drive the IRL2910STRRPBF directly from a 3.3 V GPIO if you need full Rds(on) performance—at 3.3 V the Rds(on) is much higher than the 26 mΩ datasheet spec. Use a gate-driver IC such as IR2109SPBF or IR2110SPBF for full enhancement. Avoid exceeding VGS = ±20 V absolute maximum; a 10 V zener from gate to source is recommended for protection against ESD and gate over-voltage. The built-in body diode has a slow reverse recovery; for high-frequency synchronous rectification add an external Schottky diode in parallel. Source: Infineon datasheet absolute maximum ratings.
Minimize the high-current loop area between drain and source: keep input capacitors, the MOSFET, and the load within a tight loop of < 1 sq-inch. Place a gate-driver IC such as IR2109SPBF as close as possible to the gate pin to minimize gate-drive loop inductance. Use a star-ground configuration for the gate-driver ground return separate from the power-source return. Avoid running low-level analog signals across the drain-source switching node; shield sensitive traces with a ground plane. Source: standard Infineon power MOSFET layout guidelines.
Compliance Information
PBF suffix denotes lead-free plating (matte tin over nickel). RoHS and REACH compliant per Infineon product page and DigiKey compliance data. AEC-Q100 automotive qualification status: not qualified in standard grade; consult Infineon for automotive-grade options. Halogen-free status not explicitly stated in the data provided.
