IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
MPN: IRLML0030TRPBF ✓ فعالIRLML0030TRPBF جائزہ
What is a logic-level N-channel MOSFET? It is a discrete semiconductor switch whose gate threshold is designed low enough (typically below 2.5 V) to be driven directly from low-voltage logic outputs (3.3 V or 5 V microcontrollers, gate drivers) without a separate charge pump. MOSFETs sit in the hierarchy: power MOSFET -> discrete semiconductor -> active component. Logic-level parts eliminate the level-shift stage that older 10 V-threshold parts required, simplifying design and shrinking PCB area.
Key features include a 1.3 W power dissipation rating on the standard FR-4 board, industry-standard Micro3/SOT-23 footprint for multi-vendor compatibility, JEDEC-qualified process, and optimized switching loss. The exposed lead frame on the Micro3 package provides moderate thermal performance for its size, sufficient for load-switch and DC-DC tasks where continuous current stays below ~2 A. Per the Infineon datasheet, the part is qualified for wave-solder profiles.
Typical applications include DC-DC buck converter synchronous rectifier stages, battery protection / load switch circuits in portable electronics, low-voltage motor and solenoid drivers, and LED driver high-side switches. The 27 mOhm RDS(on) at 4.5 V VGS keeps conduction loss low in 5 V rails, while the small Qg of 3.6 nC enables switching frequencies above 1 MHz for compact point-of-load converters.
When designing with this part, derate continuous current by at least 30% relative to the 5.3 A Ta rating because PCB copper area dominates thermal performance in SOT-23 layouts. Keep the gate-drive trace short and add a gate-source resistor (10-100 kOhm) to prevent unwanted turn-on from dv/dt coupling.
This page synthesizes Infineon datasheet parameters, distributor pricing tiers, drop-in alternatives in the same Micro3 footprint, and practical layout notes not consolidated in the original datasheet, delivering an at-a-glance engineering brief for new designs.
کے لیے ڈراپ اِن متبادل IRLML0030TRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRLML0030TRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, MSL Level, Operating Temperature Range, Part Number.
IRLML2502TRPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRLML2060TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLL024NTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLML5103TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLML6346TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLML6246TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLML0030TRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | 1.3 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C |
| پیکیج | Micro3 / SOT-23 (3-pin) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | IR HEXFET Power MOSFET |
| MSL لیول | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | Wave-solder capable |
| Qualification | JEDEC standard |
| RoHS اسٹیٹس | Compliant |
IRLML0030TRPBF پن کنفیگریشن
| پن 1 | Gate — Gate control input (logic-level) |
| پن 2 | Source — Source terminal (connected to GND for low-side) |
| پن 3 | Drain — Drain terminal (load connection for low-side switch) |
محفوظ آپریٹنگ ایریا (estimated from datasheet SOA)
عام استعمالات
IRLML0030TRPBF کے لیے موزوں ہے 6 ایپلیکیشنs: DC-DC Buck Converter Synchronous Rectifier, Battery Load Switch / Port Protection, LED Driver High-Side Switch, Low-Voltage Motor and Solenoid Driver, Power OR-ing and Redundancy Switch, Reverse-Polarity and Surge Protection.
DC-DC Buck Converter Synchronous Rectifier
The IRLML0030TRPBF serves as the low-side synchronous rectifier MOSFET in 5 V-input buck converters delivering up to 3 A continuous load. Its 27 mOhm RDS(on) at VGS=4.5 V and 3.6 nC total gate charge yield conduction and switching losses acceptable for 500 kHz-1 MHz switching frequencies. Paired with a logic-level PWM controller, it replaces a Schottky diode to gain 3-5% efficiency. The Micro3 footprint fits compact POL modules under handheld devices and IoT sensors.
تجویز کردہ
Battery Load Switch / Port Protection
The IRLML0030TRPBF is ideal for USB port and battery load-switch circuits in 1-cell Li-ion powered devices. Its 5 V gate-drive compatibility allows direct control from a 3.3 V GPIO without level shifting. The 30 V VDS rating easily handles USB hot-plug transients. With 27 mOhm RDS(on) at 5 V VGS, voltage drop at 2 A load is only 54 mV, preserving battery runtime. Reverse-current blocking is achieved by adding a second IRLML0030TRPBF back-to-back.
تجویز کردہ
LED Driver High-Side Switch
For low-voltage LED driver high-side switching in 5 V-12 V lighting strips, the IRLML0030TRPBF's 30 V VDS and 5.3 A ID rating comfortably handle 1-2 A LED strings with PWM dimming. The 27 mOhm RDS(on) keeps conduction loss below 100 mW per FET at 2 A, eliminating the need for thermal management. Gate drive from a 3.3 V or 5 V microcontroller timer captures PWM dimming at 1 kHz-20 kHz without heatsinking.
تجویز کردہ
Low-Voltage Motor and Solenoid Driver
The IRLML0030TRPBF drives small DC motors, solenoids, and relays in 5 V-24 V systems where its 5.3 A ID and 30 V VDS ratings provide ample margin. Free-wheeling diode protection is required across inductive loads; a 1N4001 or Schottky diode handles back-EMF. Gate drive from a logic-level half-bridge driver IC such as the DRV8714 enables bidirectional motor control. The Micro3 footprint fits compact H-bridge layouts for robotics and hobby servos.
تجویز کردہ
Power OR-ing and Redundancy Switch
The IRLML0030TRPBF is well-suited as a power OR-ing FET in dual-battery or dual-supply redundancy circuits where two sources feed a common load. Its low RDS(on) of 27 mOhm minimizes forward voltage drop while the body diode provides reverse blocking during transient source switching. Combined with a comparator-based controller, the FET isolates failed sources and prevents cross-conduction. The Micro3 footprint enables compact redundancy modules in server and telecom applications.
تجویز کردہ
Reverse-Polarity and Surge Protection
Placed in series with the supply rail, the IRLML0030TRPBF can act as a reverse-polarity protection switch when paired with a comparator or dedicated hot-swap controller. Its 30 V VDS rating absorbs typical load-dump transients in 12 V automotive subsystems (after TVS clamping). At 27 mOhm RDS(on), voltage drop at 2 A is only 54 mV, much lower than Schottky-based reverse-polarity protection. The logic-level gate enables microcontroller-controlled enable/disable.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRLML0030TRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRLML2502TRPBF | IRLML2060TRPBF | IRLML6346TRPBF | IRLML5103TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | Micro3 / SOT-23 | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID) | 5.3 A | 5.2 A | 5.2 A | 5.5 A | 3.6 A (P-channel) |
| RDS(on) max at VGS=4.5V | 27 mOhm | 45 mOhm | ~30 mOhm | 20 mOhm | 60 mOhm |
| Total Gate Charge (Qg) | 3.6 nC | 5 nC | 4 nC | 3 nC | 9 nC |
| Power Dissipation (PD) | 1.3 W | 1.3 W | 1.3 W | 1.3 W | 1.3 W |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
| Unit Price (qty 1, USD) | $0.42 | $0.40 | $0.45 | $0.50 | $0.55 |
اہم امتیازی خصوصیات
- Lowest RDS(on) in Micro3 family at 27 mOhm (بمقابلہIRLML2502TRPBF)
- Higher continuous current than P-channel alternatives (بمقابلہIRLML5103TRPBF)
- Lower gate charge than second-source equivalents (بمقابلہIRLML2060TRPBF)
ڈیزائن نوٹس
Estimated: At TA=25C on a standard JEDEC FR-4 board with 1 oz copper, the IRLML0030TRPBF dissipates 1.3 W. For PCB layouts without dedicated thermal copper, derate continuous current to 2-3 A to keep junction below 100C. Add copper pours on the drain pad (pin 3) and source pad (pin 2) to spread heat. Ambient-temperature derating should follow 10 mW/C above 25C.
Keep the gate-drive trace short (<5 mm) to minimize parasitic inductance that causes ringing and dv/dt-induced false turn-on. Add a 10 kOhm gate-source resistor to bleed off residual charge and hold the FET off during controller reset. Place input capacitors and the gate-drive IC within 10 mm of the gate pin. Use a wide source-return trace to keep the high-current loop small.
Do not exceed VGS of +/- 12 V (logic-level maximum) or the gate oxide will be damaged. Add a TVS diode or zener clamp on the gate for inductive-load applications. Always verify the body diode's reverse-recovery behavior when used in synchronous rectifier topologies above 500 kHz. The Micro3 package is not rated for >1.3 W dissipation without copper spreading.
تعمیل کی معلومات
RoHS compliant per Infineon datasheet; lead-free reflow profile supported. JEDEC-qualified process per Infineon product page. Not AEC-Q100 qualified - not intended for automotive safety applications.
