IRS2110SPBF - 500V High/Low Side 2.5A Gate Driver SOIC-16
部品番号: IRS2110SPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.72 | $720.00 |
IRS2110SPBF 概要
A gate driver IC is an interface device between low-power control logic (such as a microcontroller PWM output or analog controller) and the high-power gate of a switching transistor. It supplies the high transient current required to charge and discharge the gate capacitance quickly, reducing switching losses, and provides level-shifting so a low-voltage control signal can drive a high-side switch referenced to the switching node. Gate drivers belong to the broader category of power management ICs, sitting between signal-level controllers and the discrete power stage.
Key features of the IRS2110SPBF include fully operational bootstrap operation to +500 V, 120 ns propagation delay (typical), undervoltage lockout for both VCC and VBS supplies, and TTL/CMOS compatible logic inputs with hysteresis. The driver accepts a logic supply (VCC) of 10 V to 20 V and a floating supply up to 500 V offset, supporting high-side N-channel MOSFET or IGBT switching in bridge configurations.
The IRS2110SPBF uses a level-shifted high-side channel with a floating bootstrap supply that allows the high-side gate drive to track the switching node voltage up to 500 V. The monolithic HVIC construction eliminates optocoupler or pulse-transformer isolation in the drive path, shrinking BOM count and improving noise immunity. Undervoltage lockout on both VCC and VBS prevents driving the power stage with insufficient gate voltage, which would otherwise cause high R_DS(on) losses.
Typical applications include motor drive inverters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, and half-bridge/full-bridge DC-DC converters. The 500 V rating suits 230 VAC offline rectifier-fed systems where 400 V bus rails are common.
When designing with this device, the bootstrap capacitor must be sized to deliver the gate charge of the high-side FET plus enough hold-up time at the lowest PWM duty cycle. A 0.1 uF to 1 uF ceramic bypass on VCC/VBS is mandatory. Do not exceed the absolute maximum VBS of 25 V and do not let the high-side float for extended periods without refresh pulses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: IRS2110SPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRS2110SPBF （同一形状・フットプリント） — 相違点: Package, Logic Input Compatibility, RoHS Status, MSL Level, Number of Channels.
クイック比較ツール — 並列比較する代替部品を選択:
IRS2110STRPBF
✅ ドロップイン✓ 在庫あり
$1.42 / 個
データシートを見る →IRS2113SPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IR2110SPBF
✅ ドロップイン✓ 在庫あり
$1.98 / 個
データシートを見る →IR2110STRPBF
✅ ドロップイン✓ 在庫あり
$1.35 / 個
データシートを見る →IR2109SPBF
✅ ドロップイン✓ 在庫あり
$1.05 / 個
データシートを見る →IR2132SPBF
✅ ドロップイン✓ 在庫あり
$5.55 / 個
データシートを見る →IR2128SPBF
✅ ドロップイン✓ 在庫あり
$1.62 / 個
データシートを見る →IR2304SPBF
✅ ドロップイン✓ 在庫あり
$0.48 / 個
データシートを見る →IRS2110SPBF 最大定格＆電気的特性
| Driver Type | High and Low Side, Half-Bridge |
| Number of Drivers | 2 |
| 出力構成 | Non-Inverting |
| Peak Source/Sink Current | 2.5 A / 2.5 A |
| Offset Voltage (High-Side) | Up to 500 V |
| Logic Supply Voltage (VCC) | 10 V to 20 V |
| Floating Supply Voltage (VBS) | 10 V to 20 V (25 V abs max) |
| Propagation Delay (typ.) | 120 ns |
| Rise Time (typ.) | 25 ns |
| Fall Time (typ.) | 17 ns |
| Undervoltage Lockout | Yes (VCC and VBS) |
| Input Logic Compatibility | TTL / CMOS with hysteresis |
| 動作温度範囲 | -40 C to +125 C |
| パッケージ | 16-SOIC (SOIC-16 W) |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant (Pb-free) |
| MSLレベル | 3 |
IRS2110SPBF ピン構成
| ピン 1 | VCC — Logic supply (10 V to 20 V) |
| ピン 2 | IN — Logic input for high-side and low-side (non-inverting) |
| ピン 3 | NC — Not connected (per datasheet, reserved) |
| ピン 4 | COM — Low-side return (ground reference) |
| ピン 5 | LO — Low-side gate drive output |
| ピン 6 | VS — High-side floating supply return (switching node) |
| ピン 7 | HO — High-side gate drive output |
| ピン 8 | VB — High-side floating supply (bootstrap) |
| ピン 9 | VCC — Logic supply (duplicate, parallel pin) |
| ピン 10 | NC — Not connected (per datasheet, reserved) |
| ピン 11 | VS — High-side floating supply return (duplicate) |
| ピン 12 | NC — Not connected (per datasheet, reserved) |
| ピン 13 | VCC — Logic supply (duplicate, parallel pin) |
| ピン 14 | NC — Not connected (per datasheet, reserved) |
| ピン 15 | IN — Logic input (duplicate, parallel pin) |
| ピン 16 | COM — Low-side return (duplicate, parallel pin) |
主な用途
IRS2110SPBF の用途: 7 件s: Half-Bridge Motor Drive Inverter, Switch-Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS) Inverter, Solar Microinverter / String Inverter, Electronic Ballast for HID / Fluorescent Lamps, Class D Audio Amplifier Output Stage, Industrial Induction Heater.
Half-Bridge Motor Drive Inverter
The IRS2110SPBF drives the high-side and low-side N-channel MOSFETs (or IGBTs) in a half-bridge leg of a 3-phase motor drive inverter. Its 500 V high-side floating channel supports 230 VAC rectified DC bus rails up to 400 V, while 2.5 A peak output current switches discrete FETs with Qg up to ~100 nC within 25 ns rise time. The 120 ns matched propagation delay between high-side and low-side channels prevents shoot-through that would otherwise destroy the bridge. A bootstrap diode and 0.1 uF to 1 uF ceramic capacitor supply VBS, refreshed on each low-side conduction cycle.
おすすめ
Switch-Mode Power Supply (SMPS)
In a half-bridge or full-bridge SMPS topology, the IRS2110SPBF provides the high-side gate drive referenced to the switching node, which can swing at hundreds of volts. The 500 V offset rating and 10-20 V VCC/VBS logic supply covers most 24 V to 400 V bus designs. Undervoltage lockout on both VCC and VBS prevents driving the FETs with insufficient gate voltage, avoiding high R_DS(on) losses. The TTL-compatible input allows direct connection to a PWM controller such as the SG3525 or UC3525 without level shifting.
おすすめ
Uninterruptible Power Supply (UPS) Inverter
UPS systems require a low-loss inverter stage to convert battery DC to AC mains. The IRS2110SPBF drives the IGBT or MOSFET legs in a 50/60 Hz sine-modulated H-bridge, with the 500 V offset accommodating 220 V AC outputs after rectification. Bootstrap operation eliminates the need for an isolated gate-drive supply per high-side switch, reducing BOM count and PCB area. The matched 120 ns propagation delay ensures clean PWM transitions critical to meeting UPS output THD targets below 5%.
おすすめ
Solar Microinverter / String Inverter
In photovoltaic string inverters, the IRS2110SPBF drives the MOSFETs in the DC-DC boost stage and the DC-AC unfolding bridge. The 500 V rating covers 600 V PV open-circuit strings (Voc up to ~480 V). Undervoltage lockout protects the FETs from partial-gate conduction at low battery voltage during cold-start. The low 120 ns delay enables the high PWM frequencies (50-100 kHz) needed for compact transformer-based isolated topologies used in modern microinverters.
おすすめ
Electronic Ballast for HID / Fluorescent Lamps
Electronic ballasts for high-intensity discharge (HID) and fluorescent lamps use a half-bridge resonant inverter topology operating at 30-100 kHz. The IRS2110SPBF drives the half-bridge FETs at this frequency with low switching loss thanks to 25 ns rise and 17 ns fall times. Its floating high-side channel handles the resonant tank node that swings above the DC bus, while UVLO on VBS prevents lamp flicker during startup transients. The 16-SOIC footprint enables compact ballast designs where PCB area is constrained.
おすすめ
Class D Audio Amplifier Output Stage
Class D audio amplifiers use a half-bridge or full-bridge switching output stage modulated at 200-500 kHz, followed by an LC low-pass filter reconstructing the audio waveform. The IRS2110SPBF's 2.5 A drive current and 25 ns rise time switch output FETs fast enough to minimize dead-time distortion, while the matched 120 ns propagation delay keeps channel timing tight for low THD. The 500 V rating provides ample headroom for +/-100 V audio rails in professional-grade amplifiers.
おすすめ
Industrial Induction Heater
Resonant induction heating inverters operate at 20-100 kHz with high-Q LC tanks driving a heating coil. The IRS2110SPBF drives the half-bridge IGBTs or MOSFETs of these inverters, where the floating high-side channel swings at the full DC bus voltage (often 300-400 V from rectified 3-phase mains). The matched 120 ns delay supports the zero-voltage-switching (ZVS) control loops that maximize heater efficiency above 90%. Bootstrap operation simplifies the gate-drive supply layout versus transformer-isolated designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRS2110SPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRS2110STRPBF | IRS2113SPBF | IR2110SPBF | IR2110STRPBF | IR2109SPBF |
|---|---|---|---|---|---|---|
| Package | 16-SOIC | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same family |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same (IR legacy) | Infineon - same (IR legacy) | Infineon - same |
| Driver Type | Half-Bridge (High+Low Side) | Half-Bridge - same | Half-Bridge with /SD | Half-Bridge - same | Half-Bridge - same | Half-Bridge - same |
| High-Side Offset Voltage | 500 V | 500 V - same | 500 V - same | 500 V - same | 500 V - same | 600 V - higher |
| Peak Source/Sink Current | 2.5 A / 2.5 A | 2.5 A / 2.5 A - same | 2.5 A / 2.5 A - same | 2.5 A / 2.5 A - same | 2.5 A / 2.5 A - same | 0.29 A / 0.6 A - lower |
| Propagation Delay | 120 ns | 120 ns - same | 120 ns - same | 120 ns - same | 120 ns - same | 750 ns - higher |
| VCC Range | 10 V to 20 V | 10 V to 20 V - same | 10 V to 20 V - same | 10 V to 20 V - same | 10 V to 20 V - same | 10 V to 20 V - same |
| Undervoltage Lockout | Yes (VCC and VBS) | Yes - same | Yes - same | Yes - same | Yes - same | Yes - same |
| Qty-1 Unit Price (USD) | 1.45 | ~1.45 (same die) | ~1.55 | ~1.50 (legacy) | ~1.45 | ~0.95 |
主な差別化要因
- 500 V high-side offset with monolithic HVIC construction （vs IR2109SPBF)
- Shutdown pin available as drop-in upgrade （vs IRS2113SPBF)
- Pin-compatible legacy IR prefix variant for long-term support （vs IR2110STRPBF)
設計ノート
Bootstrap capacitor sizing for the IRS2110SPBF: use a 0.1 uF to 1 uF ceramic capacitor (X7R, 25 V or higher rating) from VB to VS. The capacitor must hold VBS above the UVLO threshold (~8.5 V) for the duration of the longest high-side on-time. As a rule, CBOOT >= (Qg_highside * 2) / delta_V. For a 50 nC high-side gate charge and 0.5 V droop allowance, a 0.22 uF capacitor is sufficient. Add a low-ESR ceramic (1 uF or 10 uF X7R) in parallel if the PWM duty cycle exceeds 90%.
Estimated: at 500 kHz switching frequency with Qg = 50 nC, the IRS2110SPBF dissipates approximately P = VCC * Qg * fsw = 15 V * 50 nC * 500 kHz = 0.375 W. With SOIC-16 theta_JA of approximately 80 C/W, this yields a junction temperature rise of ~30 C above ambient. For continuous operation at elevated temperatures or higher switching frequencies, copper pours on the COM pins and the exposed pad of the package are recommended.
Place the 0.1 uF VCC bypass ceramic as close as possible to the VCC and COM pins (within 3 mm). The bootstrap diode (e.g., UF4007 or a fast-recovery SMD diode) connects from VCC to VB and must be reverse-blocking with low forward drop; the high-side return VS must be the only ground reference for the bootstrap cap. Keep the high-side gate drive trace (HO, VB, VS) short and away from the low-side loop to minimize dv/dt-induced noise on the VBS supply.
Common pitfalls with the IRS2110SPBF: (1) Exceeding 25 V on VBS destroys the high-side channel - verify bootstrap supply is clamped. (2) Letting VS float (no low-side refresh for several switching cycles) causes the bootstrap capacitor to discharge and UVLO to trip, leaving the high-side FET partially on. (3) Driving the IN pin above VCC can cause latch-up; clamp the input with a series resistor and Schottky diode. (4) Not providing a local return for VS (pin 6/11) couples high-side switching noise into the logic ground, causing spurious UVLO trips.
コンプライアンス情報
RoHS compliant per Infineon product page (Pb-free PBF suffix). Not AEC-Q100 qualified - automotive designs should specify an automotive-grade equivalent. Halogen-free status not explicitly stated in verified data.
