IR2132SPBF - 600V 3-Phase Half-Bridge Gate Driver | Infineon
MPN: IR2132SPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $11.92 | $11.92 |
| 10 | $10.85 | $108.50 |
| 100 | $9.1 | $910.00 |
| 500 | $7.65 | $3,825.00 |
| 1,000 | $6.4 | $6,400.00 |
| 2,500 | $5.55 | $13,875.00 |
IR2132SPBF Overview
A gate driver is a power-conversion support IC that translates low-power logic-level PWM signals from a microcontroller or DSP into high-current gate-drive pulses capable of rapidly switching the gates of high-voltage MOSFETs or IGBTs. Within the power-management hierarchy, gate drivers sit one level above the switching transistors and one level below the control IC, providing the current amplification, level shifting, and isolation (in the high-side floating channels) required to operate a half-bridge or full-bridge topology. The IR2132SPBF uses Infineon's proprietary HVIC (high-voltage integrated circuit) process, which monolithically integrates the high-voltage level-shift stage with low-voltage CMOS logic on a single die.
Key features include 600 V maximum offset voltage on the high-side floating channels, a gate-drive supply range of 10 V to 20 V, dV/dt immunity, tolerance to negative transient voltage on VS pins, and a typical deadtime of 0.8 us to prevent cross-conduction in the half-bridge legs. Logic inputs are CMOS/LSTTL compatible down to 2.5 V logic. The 'inverting' input variant means that a logic-high on HINx/LINx produces a logic-low on the corresponding gate output (HO/LO), simplifying logic inversion in some PWM schemes.
Typical applications include three-phase variable-frequency drives (VFDs) for induction and BLDC motors, servo amplifiers, HVAC compressors, industrial pump drives, and uninterruptible power supplies (UPS). The wide-body SOIC-28 footprint is the industry-standard pinout for this driver family, which simplifies PCB layout and second-sourcing. The SPBF suffix indicates lead-free (PbF), RoHS-compliant, and tube packaging per Infineon's ordering nomenclature.
When designing with the IR2132SPBF, use a bootstrap diode and capacitor on each high-side supply (VBx-VSx) sized to refresh the floating supply during the low-side on-time; 1 uF to 4.7 uF ceramic X7R capacitors are typical. Place the bootstrap diode close to the VB pin and use a low-ESR ceramic bypass on VCC.
This page synthesizes distributor pricing, parametric comparison with sibling drivers, and practical bootstrap-design guidance not collected in the manufacturer datasheet alone.
Drop-in alternatives for IR2132SPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2132SPBF (same form factor and footprint) β differing in Package, Configuration, Driver Type, Logic Input Compatibility, MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2132STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2130SPBF
β Drop-Inβ In Stock
$4.25 / Unit
View Datasheet βIRS2332SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2132SPBF Maximum Ratings & Electrical Characteristics
| Part Number | IR2132SPBF |
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Function | Half-Bridge Gate Driver IC (3-phase, 6-channel) |
| Configuration | Inverting input |
| Number of Outputs | 6 (3 high-side, 3 low-side) |
| Maximum Offset Voltage (High-Side) | 600 V |
| Output Current (Source/Sink) | 0.5 A |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Logic Input Compatibility | CMOS/LSTTL, down to 2.5 V logic |
| Typical Deadtime | 0.8 us |
| Undervoltage Lockout (UVLO) | Yes, all 6 channels |
| Bootstrap Design | Required for high-side channels |
| dV/dt Immunity | Yes |
| Negative VS Transient Tolerance | Yes |
| Package | 28-SOIC (Wide Body, 7.50 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40C to +125C |
| Lead-Free / RoHS | Yes (PbF suffix, RoHS compliant) |
| Packaging | Tube |
| Topology | 3-phase bridge driver for MOSFETs/IGBTs |
IR2132SPBF Pin Configuration
| Pin 1 | HIN1 β Logic input for high-side output 1 (inverting) |
| Pin 2 | HIN2 β Logic input for high-side output 2 (inverting) |
| Pin 3 | HIN3 β Logic input for high-side output 3 (inverting) |
| Pin 4 | LIN1 β Logic input for low-side output 1 (inverting) |
| Pin 5 | LIN2 β Logic input for low-side output 2 (inverting) |
| Pin 6 | LIN3 β Logic input for low-side output 3 (inverting) |
| Pin 7 | LO1 β Low-side gate drive output 1 |
| Pin 8 | LO2 β Low-side gate drive output 2 |
| Pin 9 | LO3 β Low-side gate drive output 3 |
| Pin 10 | VSS β Logic ground (return for VCC and inputs) |
| Pin 11 | VS1 β High-side floating supply return 1 |
| Pin 12 | VS2 β High-side floating supply return 2 |
| Pin 13 | VS3 β High-side floating supply return 3 |
| Pin 14 | HO1 β High-side gate drive output 1 |
| Pin 15 | HO2 β High-side gate drive output 2 |
| Pin 16 | HO3 β High-side gate drive output 3 |
| Pin 17 | VB1 β High-side bootstrap supply 1 |
| Pin 18 | VB2 β High-side bootstrap supply 2 |
| Pin 19 | VB3 β High-side bootstrap supply 3 |
| Pin 20 | VCC β Logic and gate drive supply (10V to 20V) |
| Pin 21 | FAULT β Fault indicator output (active low, open-drain) |
| Pin 22 | ITRIP β Current-sense comparator input |
| Pin 23 | CAO β Current-sense amplifier output |
| Pin 24 | SD β Shutdown input (active low) |
| Pin 25 | RCIN β RC network for fault timing |
| Pin 26 | VSS β Logic ground (second bond pad) |
| Pin 27 | NC β Not connected (per datasheet) |
| Pin 28 | NC β Not connected (per datasheet) |
Typical Applications
IR2132SPBF is suitable for 6 applications: Three-Phase Variable Frequency Drive (VFD), Brushless DC (BLDC) Motor Drive, Uninterruptible Power Supply (UPS) Inverter Stage, Solar Micro-Inverter / String Inverter, Industrial Servo Drive Amplifier, HVAC Compressor and Pump Inverter.
Three-Phase Variable Frequency Drive (VFD)
The IR2132SPBF drives the six IGBTs of a three-phase inverter bridge for induction motor VFDs operating from 230 V AC or 380 V AC rectified buses (325 VDC or 540 VDC). Its 600 V high-side offset rating provides 60 V to 80 V transient margin above a 540 VDC bus, well within the safe operating envelope. The 0.5 A source/sink capability switches 50 A-class IGBT modules at 4 to 8 kHz with manageable switching loss, and the integrated 0.8 us deadtime prevents shoot-through that would otherwise destroy the bridge. A single IR2132SPBF replaces three discrete half-bridge driver ICs, cutting BOM cost and PCB area significantly in motor drives from 0.4 kW to 7.5 kW.
Recommended
Brushless DC (BLDC) Motor Drive
In a BLDC motor controller for e-bikes, drones, or appliance pumps, the IR2132SPBF provides the six-channel gate drive for the three-phase MOSFET bridge. The 28-SOIC wide-body package has a low thermal resistance and operates comfortably at 20 kHz PWM with 0.5 A peak gate current - sufficient for 30 A to 60 A BLDC controllers using IRFB7545PBF or IRF3007STRLPBF MOSFETs. The integrated deadtime and UVLO simplify the safety certification path for consumer products (UL, CE) because all six channels are protected against low VCC conditions that could otherwise cause cross-conduction and catastrophic failure.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
In a 1 kVA to 10 kVA online UPS, the IR2132SPBF drives the IGBT inverter stage that converts the battery/DC bus back to AC mains during a power outage. The 600 V rating covers 400 VDC telecom bus architectures with margin. Its dV/dt immunity (verified per Infineon's HVIC process) rejects fast-switching transients on the high-side floating supply that would otherwise trigger spurious gate pulses. A single IR2132SPBF replaces three IR2110SPBF + three isolated DC-DC supplies, reducing solution cost by 40 percent and increasing reliability by reducing the component count by half.
Recommended
Solar Micro-Inverter / String Inverter
In a residential solar micro-inverter (typically 250 W to 600 W output), the IR2132SPBF drives the H-bridge or three-phase inverter that converts the 30-60 VDC panel output to 230 VAC grid power through a high-frequency transformer and rectifier stage. The wide-body SOIC package handles the high-side floating supply bootstrapping cleanly up to 600 V at the rectified bus. Its CMOS-compatible logic inputs down to 2.5 V allow direct connection to a low-power microcontroller or DSP PWM peripheral without level shifters, simplifying the control board BOM.
Recommended
Industrial Servo Drive Amplifier
Servo drives for CNC machines, robotics, and industrial automation require precise PWM generation with minimum deadtime to maintain torque linearity. The IR2132SPBF's integrated 0.8 us deadtime is adequate up to about 8 kHz PWM - above which, firmware-managed deadtime (IR2130SPBF variant) is preferred. The 600 V rating covers 380 VAC industrial mains, and the dV/dt immunity rejects the fast transients produced by 50 A to 200 A IGBT modules during hard switching. The 28-SOIC wide-body footprint is the industry standard for this driver family, allowing second-source flexibility.
Recommended
HVAC Compressor and Pump Inverter
Variable-speed compressors for air conditioners and industrial pumps use three-phase inverter stages driven directly by the IR2132SPBF. Operating from a 325 VDC or 540 VDC rectified bus, the driver handles the IGBTs switching at 4 to 12 kHz with reliable 0.5 A peak gate drive current. The integrated deadtime and full UVLO on all six channels protect the bridge during brownout conditions, and the wide operating temperature range of -40C to +125C supports outdoor cabinet installations. The PbF suffix (lead-free, RoHS) is required for sale into EU HVAC markets subject to RoHS Directive 2011/65/EU.
Recommended
Recommended Products Summary
Engineering reference data for IR2132SPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2132STRPBF | IR2130SPBF | IRS2332SPBF | IR2110SPBF | IR2109SPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 28-SOIC (Wide Body) | 28-SOIC (Wide Body) - same | 28-SOIC (Wide Body) - same | 28-SOIC (Wide Body) - same | 16-SOIC (Wide Body) - different | 8-SOIC - different |
| Number of Channels | 6 (3 high + 3 low) | 6 (3 high + 3 low) | 6 (3 high + 3 low) | 6 (3 high + 3 low) | 2 (1 high + 1 low) | 2 (1 high + 1 low) |
| Topology | 3-phase bridge | 3-phase bridge | 3-phase bridge | 3-phase bridge | Single half-bridge | Single half-bridge |
| Maximum Offset Voltage | 600 V | 600 V | 600 V | 600 V | 500 V | 600 V |
| Output Current (Source/Sink) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 2.0 A | 1.0 A |
| Input Logic | Inverting | Inverting | Non-inverting | Non-inverting | Non-inverting | Non-inverting |
| Integrated Deadtime | Yes (0.8 us) | Yes (0.8 us) | No - firmware managed | Yes (programmable) | No - firmware managed | Yes (540 ns) |
| UVLO Protection | All 6 channels | All 6 channels | All 6 channels | All 6 channels | Both channels | Both channels |
| Packaging (SPBF = Tube) | Tube (SPBF) | Tape & Reel (STRPBF) | Tube (SPBF) | Tube (SPBF) | Tube (SPBF) | Tube (SPBF) |
Key Differentiators
- Integrated 0.8 us deadtime reduces firmware burden (vs IR2130SPBF)
- Inverting-input logic simplifies PWM generation (vs IRS2332SPBF)
- Three-phase bridge in a single IC (vs IR2110SPBF)
- Lead-free PbF finish with full RoHS/REACH compliance (vs Non-PbF legacy variants)
Design Notes
Bootstrap capacitor sizing: choose C_BOOT >= Q_gate_total / dV_BS_max, where dV_BS_max is the allowed droop on the bootstrap rail during one PWM cycle. For a typical 100 nC total gate charge and 0.5 V allowed droop, this gives 0.2 uF minimum - but a 1 uF to 4.7 uF ceramic (X7R, 25 V or higher) is standard practice to provide safety margin. The bootstrap diode must be rated for the full bus voltage plus margin; a UF4007 (1 A, 1000 V) or an ultrafast SiC diode is typical. Place the bootstrap diode within 5 mm of the VB pin and the capacitor within 2 mm to minimize parasitic inductance that causes VS bounce.
At 0.5 A peak gate current and 20 kHz switching into 100 nC gate charge, the IR2132SPBF dissipates roughly 0.5 W internally (estimated: 6 channels * 0.5 A * 15 V * 50 ns * 20 kHz = 0.45 W). The 28-SOIC wide-body package has a theta_JA of about 75 C/W on a 1 square inch 2-layer copper pour, resulting in a 38 C rise above ambient - well within the -40 C to +125 C operating range. No heatsink is required, but for high-ambient (>85 C) applications, increase the copper pour area to 2 square inches to drop the rise to about 25 C.
PCB layout critical rules: (1) Place VCC bypass (100 nF ceramic + 10 uF bulk) within 3 mm of the VCC pin; (2) keep the high-side floating loop (VB1/HO1/VS1) area as small as possible - under 5 mm x 5 mm for the loop; (3) use a star-ground topology with VSS (pin 10) as the single point ground; (4) keep the gate-drive traces (HO/LO) short and matched within 2 mm to avoid skew; (5) separate the analog ground (ITRIP, CAO, RCIN) from the power ground with a single connection at VSS; (6) route the high-voltage bus (VB, VS, HO) away from low-voltage logic to maintain 3 mm creepage. Refer to the Infineon application note AN-978 for full HVIC layout guidelines.
Common pitfalls with the IR2132SPBF: (1) Forgetting to connect the bootstrap diode - the high-side FETs will not turn on and the bridge will fail to commutate; (2) Using electrolytic capacitors instead of ceramic for the bootstrap - their ESR causes VS droop that triggers spurious UVLO; (3) Driving the IR2132SPBF with 3.3 V logic without verifying the VIL/VIH thresholds - the datasheet specifies 2.5 V logic compatibility but with reduced noise margin; (4) Neglecting the deadtime when firmware is also generating deadtime - this stacks two deadtimes and reduces effective duty cycle by 5 to 10 percent; (5) Using a single ground plane without splitting power/analog - the high di/dt switching currents inject noise into the ITRIP comparator, causing false overcurrent trips.
EMI mitigation: the IR2132SPBF's high-side switching transitions can radiate EMI due to the high dV/dt (10 kV/us typical). Mitigation: (1) add a 10 ohm to 47 ohm gate resistor in series with each gate to slow the edge; (2) use a common-mode choke on the bootstrap supply if EMI is severe; (3) keep the high-side traces (HO, VS) over a continuous ground plane to provide a return path; (4) place a 100 nF Y-capacitor between the DC bus negative and earth ground to shunt common-mode current; (5) consider a ferrite bead on the VCC supply if the IR2132SPBF is powered from a noisy switching rail. These steps typically reduce radiated EMI by 10 to 20 dB in production designs.
Compliance Information
PbF suffix indicates lead-free finish per Infineon ordering nomenclature. RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon qualification reports. Not AEC-Q100 qualified - automotive applications should consider the AUIR2132S variant or other automotive-qualified alternatives.
