ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
部品番号: ISC045N03L5SATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.83 | $8.30 |
| 100 | $0.74 | $74.00 |
| 500 | $0.66 | $330.00 |
| 1,000 | $0.58 | $580.00 |
| 3,000 | $0.51 | $1,530.00 |
ISC045N03L5SATMA1 概要
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals via an isolated gate electrode. N-channel MOSFETs are the workhorse of low-voltage (<100 V) synchronous rectification, DC-DC conversion, and hot-swap switching because electrons have higher mobility than holes, yielding lower RDS(on) per unit silicon area. Modern sub-40 V trench MOSFETs such as the ISC045N03L5SATMA1 form the synchronous rectification stage in buck converters, motor-drive half-bridges, and OR-ing circuits where efficiency, thermal performance, and PCB footprint are equally critical.
Key features of the ISC045N03L5SATMA1 include 4.5 mΩ maximum RDS(on) at 10 V VGS, threshold voltage of 2 V typical at 250 µA ID, total gate charge (Qg) of 13 nC at VGS = 10 V, and input capacitance (Ciss) of 870 pF at 15 V VDS. These metrics translate directly to lower conduction and switching losses, enabling higher-frequency operation with smaller magnetics and cooler thermal rise. The SuperSO8 5x6 footprint exposes a top-side thermal pad that drops the junction-to-case thermal resistance dramatically versus standard SO-8.
The device targets high-frequency, low-loss switching: synchronous buck converters in telecom and server DC-DC point-of-load regulators, hot-swap controllers on 12 V/24 V distribution rails, battery protection circuits for multi-cell Li-ion packs, and motor-drive half-bridges in 12 V/24 V brushless DC fans, pumps, and e-mobility peripherals. The combination of 30 V rating, low RDS(on), and small Qg keeps both conduction and driver losses minimal.
When designing with this part, size the gate-driver so VGS swings fully between 10 V (enhancement) and 0 V (full cutoff); partial enhancement at 4.5 V leaves the MOSFET in the linear region with high dissipation. Place a 1 Ω gate resistor and a local 100 nF + 10 µF bypass on VCC of the gate driver. Use Kelvin-source return to the driver ground to suppress source-inductance-induced turn-off ringing.
ドロップイン代替品: ISC045N03L5SATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ISC045N03L5SATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Part Number.
クイック比較ツール — 並列比較する代替部品を選択:
BSZ0901NSIATMA1
✅ ドロップイン✓ 在庫あり
$0.34 / 個
データシートを見る →ISZ028N03LF2SATMA1
✅ ドロップイン✓ 在庫あり
$0.49 / 個
データシートを見る →BSC076N04NDATMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IRFH5015TRPBF
✅ ドロップイン✓ 在庫あり
$0.62 / 個
データシートを見る →BSC019N04LSTATMA1
✅ ドロップイン✓ 在庫あり
$1.21 / 個
データシートを見る →ISC045N03L5SATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 |
| トランジスタタイプ | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A |
| Continuous Drain Current (ID) at TC=25°C | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | ±20 V |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | 2.5 W |
| Power Dissipation (PD) at TC=25°C | 30 W |
| パッケージ | SuperSO8 5x6 (PG-TDSON-8-6) |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55 °C to +150 °C |
| RoHS ステータス | Compliant |
ISC045N03L5SATMA1 ピン構成
| ピン 1 | Gate — Gate drive input (20V max VGS) |
| ピン 2 | Source — Source (signal return) |
| ピン 3 | Source — Source (signal return) |
| ピン 4 | Source — Source (signal return) |
| ピン 5 | Source — Source (signal return) |
| ピン 6 | Drain — Drain (power input) |
| ピン 7 | Drain — Drain (power input) |
| ピン 8 | Drain — Drain (power input) |
安全動作領域 (DC, TC=25°C)
主な用途
ISC045N03L5SATMA1 の用途: 6 件s: 12 V Synchronous Buck Converter (POL), Hot-Swap / OR-ing on 12-24 V Distribution, Brushless DC (BLDC) Motor Drive Half-Bridge, Battery Protection / BMS Discharge FET, USB-PD / Fast-Charge Wall Adapter, Telecom / Server Point-of-Load Regulator.
12 V Synchronous Buck Converter (POL)
The ISC045N03L5SATMA1 serves as the low-side synchronous rectifier in 12 V-to-1 V point-of-load buck converters where conduction and switching losses both matter. Its 4.5 mΩ RDS(on) keeps low-side loss under 1% of output power at 20 A, while the 13 nC total gate charge permits switching at 300-500 kHz with a small gate driver. The SuperSO8 thermal pad dumps heat directly into inner PCB copper layers, allowing 25 A continuous in 1 sq-in of 2 oz board area.
おすすめ
Hot-Swap / OR-ing on 12-24 V Distribution
In 12 V and 24 V hot-swap and OR-ing applications the ISC045N03L5SATMA1 acts as the main disconnect switch during board insertion. The 30 V VDS gives 18 V of headroom over nominal 24 V, absorbing moderate transient spikes without avalanche. With 18 A continuous at TA = 25 °C and 4.5 mΩ RDS(on), steady-state dissipation at 15 A is about 1 W - within the SuperSO8 thermal envelope when mounted on 1 sq-in of copper.
おすすめ
Brushless DC (BLDC) Motor Drive Half-Bridge
The ISC045N03L5SATMA1 is well suited to 12 V/24 V BLDC motor half-bridges for fans, pumps, e-bike peripherals, and small drones. With 18 A continuous at room temperature and fast switching edges from low Qg, it supports PWM frequencies of 25-50 kHz with low switching loss. The SuperSO8 5x6 footprint allows compact three-phase bridge layouts, and the ±20 V VGS tolerance survives the negative transients common on motor windings.
おすすめ
Battery Protection / BMS Discharge FET
In multi-cell Li-ion battery packs the ISC045N03L5SATMA1 functions as the low-side discharge MOSFET. Its 30 V VDS comfortably handles 12 V (3S) and 16.8 V (4S) packs, while the 4.5 mΩ on-resistance keeps discharge loss under 1% even at 20 A continuous. The small SuperSO8 footprint saves board area in slim 18650/21700 pack designs, and the OptiMOS 5 process yields tight threshold tolerance for predictable BMS turn-on characteristics.
おすすめ
USB-PD / Fast-Charge Wall Adapter
Compact USB-PD adapters up to 100 W use the ISC045N03L5SATMA1 as the primary-side or secondary-side synchronous rectifier in flyback or buck topologies. Its 30 V VDS rating suits 24 V output rails, and the 13 nC Qg minimizes drive loss at 100-200 kHz switching. Low RDS(on) improves overall efficiency by 1-2% versus competing 8-10 mΩ parts, easing thermal design in sealed adapters.
おすすめ
Telecom / Server Point-of-Load Regulator
In 48 V-to-12 V intermediate bus converters and downstream POL regulators, the ISC045N03L5SATMA1 forms the synchronous rectifier stage on the 12 V bus. The 30 V VDS gives 18 V margin over 12 V, and the SuperSO8 thermal pad handles 15-20 A continuous in server airflow. Low Qg permits 400 kHz switching, allowing small inductors that fit dense POL arrays next to FPGAs and ASICs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ISC045N03L5SATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSZ0901NS | ISZ028N03LF2SATMA1 | BSC076N04NDATMA1 | IRFH5015TRPBF | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | SuperSO8 5x6 (PG-TDSON-8-6) - same | SuperSO8 5x6 (PG-TDSON-8-6) - same | SuperSO8 5x6 (PG-TDSON-8-6) - same | PQFN-8 (5x6) - same footprint | SuperSO8 5x6 (PG-TDSON-8-6) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 4.5 mΩ | 9 mΩ | 2.8 mΩ | 7.6 mΩ | 15 mΩ | 1.9 mΩ |
| Continuous Drain Current (TA=25°C) | 18 A | 12 A | 20 A | 14 A | 10 A | 25 A |
| Total Gate Charge (Qg) | 13 nC | 9 nC | 8 nC | 16 nC | 22 nC | 20 nC |
| VGS(th) | 2 V | 1.8 V | 1.7 V | 2 V | 2.5 V | 1.8 V |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | StrongIRFET (Trench) | OptiMOS 5 (Trench) |
| Approx. Unit Price (qty 1) | $0.92 | $0.65 | $1.05 | $0.85 | $0.55 | $1.40 |
主な差別化要因
- Best-in-class RDS(on) × Qg figure of merit for 30 V OptiMOS 5 family （vs BSZ0901NS)
- 30 V VDS optimized for 12 V/24 V bus applications （vs BSC076N04NDATMA1)
- SuperSO8 5x6 footprint with 18 A TA-rated current （vs IRFH5015TRPBF)
設計ノート
Estimated: At 20 A continuous drain current with the SuperSO8 5x6 thermal pad soldered to 1 sq-in of 2 oz copper on a 4-layer FR-4 board, junction-to-ambient thermal resistance is approximately 50 C/W. Steady-state power dissipation P = I² × RDS(on) = 20² × 0.0045 = 1.8 W, yielding a junction temperature rise of about 90 °C above ambient. For sustained 18 A operation in enclosed adapters, add thermal vias under the exposed pad and a copper pour on inner layers to drop θJA below 40 C/W.
Route the gate-drive trace on the top layer with at least 20 mil width; keep the gate trace away from the drain switching node to minimize parasitic Cgd coupling. Use Kelvin-source connection by tying the gate-driver ground return directly to the source pin nearest pin 2. Place a 1 Ω gate resistor and a local 100 nF + 10 µF ceramic bypass on the gate-driver VCC to suppress VGS ringing at turn-off. The exposed thermal pad must be soldered to a continuous copper plane with thermal vias.
Do not operate with VGS below 6 V at high current - the MOSFET enters the linear region and dissipates excessive power; ensure the gate-driver swing reaches 10 V. Avoid exceeding 20 V VGS transient, which can rupture the gate oxide. Do not parallel without gate-source resistors on each part, otherwise oscillation from threshold mismatch can damage the devices. Watch SOA curves carefully at low VDS/high ID combinations - pulsed current must remain within the SOA envelope.
The 870 pF Ciss and 13 nC Qg of the ISC045N03L5SATMA1 require a gate driver capable of sourcing/sinking at least 1 A peak for sub-10 ns switching transitions. Without sufficient drive strength, switching loss rises linearly with transition time. Place a 4.7-10 Ω gate resistor to dampen ringing from package+PCB inductance (~5 nH combined). At >100 kHz switching, validate VDS waveforms with a scope probe rated for the application, not standard long-ground clips.
コンプライアンス情報
RoHS compliant per Infineon product page. Not AEC-Q100 qualified; for automotive-grade equivalents consider Infineon BSZ0901NS or similar automotive-screened StrongIRFET variants.
