K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
部品番号: K3KL7L70EM-MGCU ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $15 | $15.00 |
| 10 | $14.25 | $142.50 |
| 100 | $13.5 | $1,350.00 |
| 500 | $12.75 | $6,375.00 |
| 1,000 | $12 | $12,000.00 |
K3KL7L70EM-MGCU 概要
LPDDR5X (Low Power Double Data Rate 5X eXtended) is an evolution of the LPDDR5 memory standard defined by JEDEC, pushing data rates and energy efficiency beyond conventional LPDDR5. In the memory hierarchy, DRAM sits between on-chip SRAM caches and non-volatile storage such as NAND flash, serving as the main working memory of a system-on-chip (SoC). LPDDR5X specifically targets flagship smartphones, tablets, AI edge accelerators, automotive infotainment, and high-performance portable devices that need more bandwidth than LPDDR5 at comparable or lower power.
Key features of the K3KL7L70EM-MGCU include its 12 Gb single-die density, LPDDR5X-class speed grading (suffix -MGCU denotes speed and package options per Samsung part numbering), the compact 315-ball FBGA footprint, and Samsung's advanced low-voltage VDDQ operation that reduces I/O power versus LPDDR5. Samsung's LPDDR5X process technology supports deep power-down, per-bank refresh, and advanced bank-group architectures that improve effective bandwidth and standby efficiency.
Architecturally, the device is organized as a x32-class LPDDR5X SDRAM with bank groups supporting burst-access scheduling. Command/address and data signals use Samsung LPDDR5X signaling with on-die termination (ODT) and link error checking options implemented per JEDEC LPDDR5X conventions, simplifying SoC PHY integration for Qualcomm Snapdragon and MediaTek Dimensity class platforms.
Typical applications include flagship smartphone main memory, AI inference accelerators at the edge, automotive cockpit and ADAS domain controllers, and ultra-thin tablets or laptops using stacked/package-on-package memory configurations.
When designing this device in, ensure the SoC memory controller explicitly supports LPDDR5X timing and speed-bin compatibility, and follow Samsung's layout guidelines for fly-by routing of CA/CLK nets and matched-length DQ/DBI/DQS groups.
This page consolidates verified distributor listings, drop-in family alternatives, and practical design guidance not found in a single manufacturer datasheet.
ドロップイン代替品: K3KL7L70EM-MGCU — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K3KL7L70EM-MGCU （同一形状・フットプリント） — 相違点: Density.
クイック比較ツール — 並列比較する代替部品を選択:
K3KL7L60EM-MGCU
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K3KL8L80CM-MGCT
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K3KL7L70EM-MGCU 最大定格＆電気的特性
| Manufacturer | Samsung Electronics |
| メモリタイプ | LPDDR5X SDRAM |
| Density | 12 Gbit (1.5 GB) |
| パッケージ | 315-ball FBGA |
| 実装タイプ | Surface Mount |
| Speed Grade Suffix | -MGCU |
| Refresh | Self-refresh and per-bank refresh per JEDEC LPDDR5X |
| Termination | On-Die Termination (ODT) |
K3KL7L70EM-MGCU 315-ball fbga ピン配置ガイド
K3KL7L70EM-MGCU (315-ball fbga パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K3KL7L70EM-MGCU.
詳細は データシート をご参照ください。
主な用途
K3KL7L70EM-MGCU の用途: 6 件s: Flagship Smartphone Main Memory, AI Edge Inference Accelerators, Automotive Cockpit and Infotainment, Tablets and Ultra-Thin Laptops, Networking and Edge Servers, Security Cameras and Vision Systems.
Flagship Smartphone Main Memory
The K3KL7L70EM-MGCU fits flagship smartphone SoC platforms such as Qualcomm Snapdragon 8-series and MediaTek Dimensity 9000-series, which validate Samsung LPDDR5X dies in their memory compatibility lists. Its 12 Gb (1.5 GB) density allows multi-die configurations (e.g., 4 dies for 6 GB or 8 dies for 12 GB) to reach 8 to 16 GB system memory. LPDDR5X signaling with on-die termination keeps I/O power low during burst transfers, directly extending battery life compared with LPDDR5 at equivalent bandwidth. Placement close to the SoC in package-on-package or side-by-side PoP configurations follows Samsung fly-by CA routing guidelines; the 315-ball FBGA footprint supports dense multi-die stacking with matched-length DQ/DQS groups for signal integrity at full data rate.
おすすめ
AI Edge Inference Accelerators
Edge AI accelerators running large transformer or vision models are memory-bandwidth-bound, and the K3KL7L70EM-MGCU addresses this with LPDDR5X-class data rates in a low-power envelope. A four-die configuration of these 12 Gb chips provides 6 GB of working memory with aggregate bandwidth sufficient to keep NPU MAC arrays fed during sustained inference. Compared with GDDR solutions, LPDDR5X dissipates far less I/O power, which matters for fanless edge boxes and camera SoCs. Designers should size the power delivery network for burst current during high-utilization phases and enable Samsung's per-bank refresh to minimize latency jitter, which directly impacts real-time inference frame deadlines in vision and voice workloads.
おすすめ
Automotive Cockpit and Infotainment
Digital cockpit domain controllers running Android Automotive or QNX need multi-gigabyte DRAM with sustained bandwidth for multi-display rendering, and the K3KL7L70EM-MGCU provides 12 Gb dies that scale to 8 GB or more per controller. Samsung LPDDR5X devices are designed for the elevated temperature ranges used in automotive cabin electronics when the appropriate variant is selected, and their low VDDQ operation reduces thermal load in sealed head units. Engineers must verify AEC-Q100 qualification status of the exact suffix with Samsung before safety-relevant deployment. The 315-ball FBGA package supports the multi-die layouts common in automotive memory subsystems, and ODT simplifies routing on the long, constrained traces typical of cockpit PCB stacks.
おすすめ
Tablets and Ultra-Thin Laptops
Premium tablets and fanless laptops use LPDDR5X as main memory to balance performance and battery life, and the K3KL7L70EM-MGCU's 12 Gb density supports 8 GB to 16 GB system configurations with four to eight dies. The low standby and self-refresh current of Samsung LPDDR5X is critical for instant-on and sleep states that dominate mobile usage profiles. In these designs the memory typically sits beside or beneath the SoC; the 315-ball FBGA footprint accommodates package-on-package assembly to save board area in thin form factors. designers should follow Samsung's layout guides for DQ/DQS length matching and use controller-calibrated drive strength and ODT settings to maintain eye margins at full data rate.
おすすめ
Networking and Edge Servers
Smart NICs, 5G baseband cards, and edge servers increasingly adopt LPDDR5X for line-card buffering and packet processing where DDR power budgets are constrained. A bank of K3KL7L70EM-MGCU dies provides 1.5 GB per die with the burst bandwidth needed for high-throughput packet buffering, while per-bank refresh keeps access latency predictable under load. Compared with DDR4 SODIMM solutions, an LPDDR5X subsystem soldered with 315-ball FBGA parts offers better vibration tolerance and lower profile, valuable in compact edge appliances. Designers should implement JEDEC LPDDR5X-compliant training sequences in firmware and verify thermal design at worst-case bandwidth since sustained traffic raises both core and I/O die temperature.
おすすめ
Security Cameras and Vision Systems
High-resolution IP cameras and multi-sensor vision systems need DRAM that buffers multiple 4K or 8K video streams while running on-camera AI analytics, a workload where the K3KL7L70EM-MGCU's bandwidth-per-watt advantage matters. Its 12 Gb density supports frame buffers plus neural-network activation memory on a small die count, and the 315-ball FBGA package withstands the vibration and temperature swings of outdoor camera enclosures better than socketed memory. The low self-refresh current suits always-on recording modes that define camera duty cycles. Engineers should derate the data rate if long PCB traces separate memory from the SoC, and use Samsung's recommended termination settings to keep read/write margins across the full automotive-style temperature range.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K3KL7L70EM-MGCU — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K3KL7L60EM-MGCU | K3KL8L80CM-MGCT |
|---|---|---|---|
| Package | 315-ball FBGA | 315-ball FBGA - same | 315-ball FBGA class - verify ballout |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 12 Gbit | 6 Gbit | 16 Gbit |
| Memory Type | LPDDR5X | LPDDR5X | LPDDR5X |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Drop-in Capability | Reference part | Same EM-family pinout; density change requires controller support | Different die family; board re-qualification required |
| Lifecycle Status | Active | Active | Active |
主な差別化要因
- Higher density per die than 6 Gb EM-family siblings （vs K3KL7L60EM-MGCU)
- EM die family footprint compatibility （vs K3KL8L80CM-MGCT)
- LPDDR5X energy efficiency （vs LPDDR5-class Samsung parts)
設計ノート
For LPDDR5X routing at full data rate, follow Samsung's fly-by topology for command/address and clock nets, and match DQ/DBI/DQS trace lengths within the tolerance stated in the memory datasheet (typically tight intra-byte-group matching). The 315-ball FBGA requires via-in-pad or dog-bone fanout; use 4-ounce ground planes beneath the memory region to control impedance. Consult the SoC vendor's memory design guide (e.g., Qualcomm or MediaTek platform layout guides) in addition to the Samsung datasheet, since controller-side routing rules are often stricter than the memory vendor minimums.
LPDDR5X uses separate VDD (core), VDDQ (I/O), and VDD2 rails per JEDEC LPDDR5X conventions; the exact voltage levels for the -MGCU speed bin must be read from the Samsung datasheet before power tree design. Size the VDDQ regulator for burst currents during concurrent read/write bursts across bank groups, with bulk capacitance near each die in multi-die layouts. Enable power-down and deep-sleep modes in firmware to exploit the low standby current - without firmware support, real system power will far exceed the datasheet standby figures.
The most frequent integration errors with LPDDR5X parts are (1) selecting a die without confirming the SoC memory compatibility list - Samsung EM and CM die families have different ballouts and cannot be interchanged without board changes, (2) ignoring the suffix code, since -MGCU and other suffixes denote different speed bins, and (3) assuming LPDDR5 controller support for an LPDDR5X-only bin. Always qualify the complete MPN, request the NDA datasheet for AC timing, and run memory training validation across temperature before release.
コンプライアンス情報
Compliance status not stated in the provided distributor listings; Samsung mobile DRAM products are typically RoHS compliant, but this must be confirmed from official Samsung documentation. Standard -MGCU parts are not confirmed AEC-Q100 qualified; contact Samsung for automotive variants.
