K4A4G045WD-BCPB - 4Gb DDR4 SDRAM x4 1.2V | Samsung
部品番号: K4A4G045WD-BCPB ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
K4A4G045WD-BCPB 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR memory hierarchy, following DDR, DDR2, and DDR3. Within the memory IC taxonomy it sits under DRAM -> SDRAM -> DDR SDRAM -> DDR4 SDRAM. DDR4 devices transfer data on both clock edges, doubling effective bandwidth per clock, and introduce lower operating voltage (1.2V vs 1.5V for DDR3), bank groups, and improved on-die termination for higher data rates and lower power in computing systems.
Key features of the K4A4G045WD include 4Gb density organized as 1G x 4 (per Samsung and distributor data DDR4 1Gx4 PC2133), 1.2V core supply, DDR4-2133 speed class, and the compact 78-ball TFBGA package that enables dense memory subsystem layouts. The D-die process generation offers mature yield and long-lifecycle production status within Samsung's DDR4 portfolio.
Architecturally, the device uses DDR4 bank-group organization with internal prefetch and standard DDR4 command interface (ACT, READ, WRITE, REF, PRE), supporting burst lengths of 8 with sequential and interleaved options, per the Samsung DDR4 SDRAM datasheet Rev. 1.1 (66 pages) covering the K4A4G045WD and K4A4G085WD family.
Typical applications include desktop and notebook PC DIMM and soldered-down memory, networking and communication equipment, industrial controllers, and server-adjacent subsystems requiring stable long-term supply.
A key design consideration: DDR4 signal integrity requires careful length-matched routing, VTT termination, and controller-calibrated write leveling; verify the memory controller supports the DDR4-2133 timing set (speed bin defined in CL-tRCD-tRP order per Samsung).
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: K4A4G045WD-BCPB — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K4A4G045WD-BCPB （同一形状・フットプリント） — 相違点: Package, Organization, Interface, Memory Type, Mounting Type.
クイック比較ツール — 並列比較する代替部品を選択:
K4A4G045WD-BCRC
✅ ドロップイン✓ 在庫あり
$3.45 / 個
データシートを見る →K4A4G085WD-BCPB
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K4A4G045WD-BCPB 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| Density | 4 Gb |
| メモリ構成 | 1G x 4 |
| Speed Class | DDR4-2133 (PC2133) |
| 電源電圧 | 1.2 V |
| インターフェース | DDR4 parallel, double data rate |
| Die Generation | D-die |
| パッケージ | 78-ball TFBGA (FBGA) |
| 実装タイプ | Surface Mount |
| Number of Terminals | 78 |
| Terminal Form | Ball (BGA) |
| Package Shape | Rectangular |
| Burst Length | 8 (per Samsung DDR4 SDRAM datasheet Rev. 1.1) |
| Speed Bin Notation | CL-tRCD-tRP order (per Samsung ordering information) |
| Datasheet Pages | 66 pages (K4A4G045WD / K4A4G085WD family) |
K4A4G045WD-BCPB rectangular ピン配置ガイド
K4A4G045WD-BCPB (rectangular パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K4A4G045WD-BCPB.
詳細は データシート をご参照ください。
主な用途
K4A4G045WD-BCPB の用途: 6 件s: ECC Server and Desktop DIMM Memory, Networking and Communication Equipment, Industrial Control and Automation, Embedded Compute and Edge AI Modules, Test and Measurement Instrumentation, Consumer Electronics and Set-Top Platforms.
ECC Server and Desktop DIMM Memory
The 1G x 4 organization of the Samsung K4A4G045WD-BCPB is the standard building block for ECC-capable DDR4 DIMMs, where x4 devices allow single-device data correction on server platforms. Running at DDR4-2133 with a 1.2V supply, each 4Gb chip contributes with standard burst-length-8 operation defined in Samsung's DDR4 SDRAM datasheet Rev. 1.1. DIMM designers place 9 or 18 of these chips with registered buffers to build RDIMM/LRDIMM capacity tiers. Because speed bins are defined in CL-tRCD-tRP order, mixing chips of different suffixes on one module requires controller retraining. The x4 topology trades peak bandwidth per chip for the error-correction resilience that enterprise memory demands.
おすすめ
Networking and Communication Equipment
Routers, switches, and telecom line cards use soldered-down DDR4 such as the K4A4G045WD-BCPB for packet buffers, route tables, and control-plane memory. Its 78-ball TFBGA footprint allows dense placement near the network processor, and the 1.2V DDR4 interface keeps power low in always-on telecom hardware. Distributor data (Censtry, SourceMemoryChips) notes this part is commonly integrated into computing and networking systems requiring stable supply. Designers must budget refresh overhead and verify the network processor supports the DDR4-2133 speed bin; slower-than-datasheet timings reduce buffer bandwidth at high packet rates, so timing closure should be validated at maximum ambient temperature.
おすすめ
Industrial Control and Automation
Industrial controllers, PLCs, and HMI platforms use the K4A4G045WD-BCPB where 4Gb of DDR4 provides working memory for real-time control logic, data logging, and protocol stacks. The D-die generation offers a mature, long-lifecycle supply position valued in industrial programs with multi-year production commitments. Its 1.2V operation reduces heat inside sealed cabinets, though DDR4 signal integrity still requires length-matched traces and proper VTT termination. Boards using this chip should provision for the DDR4-2133 bin timings and validate operation across the industrial temperature envelope; distributors note ongoing DDR4 allocation as fabs shift capacity, so dual-sourcing strategies are advisable for long production runs.
おすすめ
Embedded Compute and Edge AI Modules
Edge compute modules, gateways, and compact AI accelerators solder down 4Gb x4 DDR4 chips like the K4A4G045WD-BCPB to provide DRAM for inference buffers and OS workloads in small footprints. The rectangular 78-ball TFBGA suits dense module layouts where DDR3's 96-ball parts previously dominated, and the 1.2V rail simplifies power-tree design with point-of-load regulators. System designers pair the chip with processors supporting DDR4-2133 and use controller write-leveling to close timing on short fly-by buses. The Samsung D-die sourcing ensures a stable production path while newer memory generations are ramped, an important consideration for products with 5+ year field lifetimes.
おすすめ
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory, and the K4A4G045WD-BCPB's 4Gb density in x4 organization supports the multi-chip wide buses these instruments need. The DDR4-2133 class delivers steady streaming bandwidth to move ADC data into capture buffers, while 1.2V operation limits internal heat that could affect analog front-end drift. Instrument designers typically bank multiple x4 chips to build 64-bit or wider buses, relying on the controller's calibration routines for timing margin. Sourcing through distributors reporting steady DDR4 supply (Octopart lists 2 distributors) supports both new designs and instrument service spares for legacy platforms.
おすすめ
Consumer Electronics and Set-Top Platforms
Set-top boxes, smart TVs, and consumer media platforms use cost-optimized DDR4 such as the K4A4G045WD-BCPB for video buffering, graphics frame buffers, and application memory. A single 4Gb chip covers mainstream streaming requirements, and its x4 organization lets cost-sensitive boards scale memory in affordable increments. The 78-ball TFBGA reflows on standard consumer assembly lines, and 1.2V DDR4 lowers total platform power for energy-regulated products. Consumer designers should verify the SoC memory controller's bin support for DDR4-2133 and plan for lifecycle transitions, as Samsung is gradually reallocating DDR4 capacity - SourceMemoryChips notes supply stability is the main procurement consideration for this family.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K4A4G045WD-BCPB — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K4A4G045WD-BCRC | K4A4G085WD-BCPB |
|---|---|---|---|
| Package | 78-ball TFBGA | 78-ball TFBGA - same | 78-ball TFBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb |
| Organization | 1G x 4 | 1G x 4 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V |
| Speed Bin | DDR4-2133 (PC2133) | Different bin suffix - per Samsung ordering table | DDR4-2133 (PC2133) |
| Die Generation | D-die | D-die | D-die |
| ECC-Optimized x4 Topology | Yes | Yes | No (x8) |
主な差別化要因
- ECC-friendly x4 organization （vs K4A4G085WD-BCPB)
- Mature D-die production position （vs Newer-generation DDR4 dies)
- Same-footprint speed-bin flexibility （vs K4A4G045WD-BCRC)
設計ノート
DDR4-2133 operation requires per-byte length matching of DQ, DM, and DQS strobes (in-group skew typically held to a fraction of the bit period) and fly-by or T-topology for command/address lines depending on the controller. Use ODT settings from the Samsung DDR4 SDRAM datasheet and enable controller write leveling and read training to absorb residual mismatch. Simulate the bus with IBIS models from Samsung before fabrication.
The K4A4G045WD-BCPB runs from a 1.2V VDD with separate VDDQ domains per DDR4 convention. Provide a dedicated point-of-load regulator with fast transient response for VPP/VDDQ rails and a low-noise VTT termination rail at 0.6V capable of sinking and sourcing current. Decouple each supply ball with a local ceramic capacitor network; estimated typical DRAM active current is in the hundreds of mA range per chip, so size the regulator for the full populated bank.
Do not substitute a different speed-bin suffix (e.g., K4A4G045WD-BCRC for -BCPB) without confirming the memory controller supports that bin's CL-tRCD-tRP timings - Samsung defines bins in CL-tRCD-tRP order in the ordering table. Also note the x8 variant (K4A4G085WD) shares the package but not the data-path organization; mixing organizations on a fixed x4 data route will fail bring-up.
Place the 78-ball TFBGA within a few centimeters of the memory controller to keep trace lengths short, and use solid reference planes under all DDR4 nets. Via-in-pad escape is standard for 0.8 mm-pitch-class BGA fanout. Follow Samsung's DDR4 PCB layout guidance for impedance control (typically 40 ohm single-ended for DQ groups in many designs - verify against your stackup calculator).
コンプライアンス情報
Samsung production DDR4 SDRAM is supplied lead-free/RoHS-consistent; obtain the formal environmental certificate from Samsung for the exact ordering code before regulated-program release.
