K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
部品番号: K6X0808C1D-BF55 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.3 | $230.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.85 | $1,850.00 |
K6X0808C1D-BF55 概要
An asynchronous SRAM (Static Random Access Memory) is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit made of transistors, and unlike DRAM it never requires refresh cycles. Because access is asynchronous - controlled directly by address and chip-enable timing rather than a clock - it provides deterministic, simple read and write operations. Within the memory hierarchy, SRAM sits above DRAM in speed and cost, and this parallel SRAM family occupies the classic embedded-memory slot historically used for buffering, scratchpad, and code/data storage in microprocessor-based systems.
Key features include a 5 V single supply operation, a fast 55 ns address access time, and the low stand-by and operating power typical of Samsung's advanced CMOS process technology. The K6X0808C1D family supports various operating temperature ranges and multiple package options, giving designers system-level flexibility. The three control pins (CE, OE, WE) provide standard parallel-SRAM bus interfacing with glueless connection to most 8-bit and 16-bit microcontrollers and CPUs.
Technically, the device uses Samsung CMOS SRAM process technology with a standard asynchronous timing architecture: address setup, chip-enable access, output-enable access, and write-cycle timings are all specified in the manufacturer datasheet. Data retention in stand-by is achieved with CE deselected, which keeps power consumption minimal in battery-backed or intermittently powered designs.
Typical applications include industrial control systems, networking and telecom line-card buffers, test and measurement instrumentation, legacy embedded designs requiring second-sourceable 32K x 8 memory, and battery-backed data logging where deterministic asynchronous access is preferred over clocked memory.
When designing with this device, ensure address and control setup/hold times meet the 55 ns grade datasheet limits, and tie unused address or control lines appropriately to avoid floating inputs that increase stand-by current.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: K6X0808C1D-BF55 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K6X0808C1D-BF55 （同一形状・フットプリント） — 相違点: Package, Technology, Memory Type, Organization, Data Bus Width.
クイック比較ツール — 並列比較する代替部品を選択:
K6X0808C1D-BF50
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K6X0808C1D-AF55
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K6X0808C1D-GF55000
✅ ドロップイン✓ 在庫あり
$3.2 / 個
データシートを見る →AS6C62256
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IS62C256AL
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K6X0808C1D-BF55 仕様
| メモリタイプ | Asynchronous SRAM |
| メモリサイズ | 256 Kbit |
| メモリ構成 | 32K x 8 |
| Access Time | 55 ns |
| インターフェース | Parallel |
| 電源電圧 | 5 V |
| Technology | CMOS |
| パッケージ | 28-SOP |
| 実装タイプ | Surface Mount |
| Control Signals | CE, OE, WE |
| Memory Format | SRAM |
| Clock Frequency | N/A (asynchronous) |
| Refresh | Not required (static memory) |
| RoHS ステータス | unknown |
K6X0808C1D-BF55 ピン構成
| ピン 1 | A14 — Address input bit 14 |
| ピン 2 | A12 — Address input bit 12 |
| ピン 3 | A7 — Address input bit 7 |
| ピン 4 | A6 — Address input bit 6 |
| ピン 5 | A5 — Address input bit 5 |
| ピン 6 | A4 — Address input bit 4 |
| ピン 7 | A3 — Address input bit 3 |
| ピン 8 | A2 — Address input bit 2 |
| ピン 9 | A1 — Address input bit 1 |
| ピン 10 | A0 — Address input bit 0 |
| ピン 11 | I/O0 — Data input/output bit 0 |
| ピン 12 | I/O1 — Data input/output bit 1 |
| ピン 13 | I/O2 — Data input/output bit 2 |
| ピン 14 | GND — Ground |
| ピン 15 | I/O3 — Data input/output bit 3 |
| ピン 16 | I/O4 — Data input/output bit 4 |
| ピン 17 | I/O5 — Data input/output bit 5 |
| ピン 18 | I/O6 — Data input/output bit 6 |
| ピン 19 | I/O7 — Data input/output bit 7 |
| ピン 20 | CE — Chip enable |
| ピン 21 | A10 — Address input bit 10 |
| ピン 22 | OE — Output enable |
| ピン 23 | A11 — Address input bit 11 |
| ピン 24 | A9 — Address input bit 9 |
| ピン 25 | A8 — Address input bit 8 |
| ピン 26 | A13 — Address input bit 13 |
| ピン 27 | WE — Write enable |
| ピン 28 | VCC — Power supply (+5 V) |
主な用途
K6X0808C1D-BF55 の用途: 6 件s: Industrial Control and PLC Systems, Telecom and Networking Line-Card Buffers, Test and Measurement Instrumentation, Legacy Embedded Design Maintenance and Second Sourcing, Battery-Backed Data Logging, Automotive Diagnostic and Test Fixtures.
Industrial Control and PLC Systems
Industrial controllers built around 5 V 8-bit MCUs (8051-class, H8, or legacy 68HC11 platforms) frequently need scratchpad and data-log memory on a 5 V parallel bus. The K6X0808C1D-BF55 fits these designs exactly: its 5 V CMOS I/O levels are native to the host bus, its 55 ns access time exceeds the 1-2 MHz effective bus rates of such controllers with large timing margin, and its CE/OE/WE control interface requires no glue logic. Mounted in a 28-SOP surface-mount package, it survives the vibration and thermal cycling typical of factory-floor equipment. Its asynchronous operation removes any clock-skew concerns in electrically noisy cabinets, and CMOS low stand-by current keeps data intact through powered-down intervals when combined with a backup cell.
おすすめ
Telecom and Networking Line-Card Buffers
Legacy telecom line cards and networking backplanes historically used 5 V parallel SRAM for packet staging, counters, and configuration scratchpads. The K6X0808C1D-BF55 serves this role with a 55 ns access time that comfortably meets classic 8- and 16-bit CPU bus timings (12-25 MHz class), while its 32K x 8 organization maps directly to segment-addressed buffering schemes. Because the part is asynchronous, data path latency is deterministic - valuable for TDM framers and interrupt-driven firmware that must predict memory turnaround. Samsung's CMOS process limits operating power, important in cards dissipating budget on many memory chips, and CE-deasserted stand-by reduces drain on sparsely accessed banks.
おすすめ
Test and Measurement Instrumentation
Bench instruments, data loggers, and ATE fixtures often retain a 5 V parallel memory bank for calibration constants, waveform capture staging, or state-machine context. The K6X0808C1D-BF55 is attractive here because access timing is fully asynchronous and predictable at 55 ns, simplifying worst-case timing analysis in mixed-speed instrument buses. The 8-bit wide I/O matches the byte-oriented DMA channels common in measurement front-ends, and the SOP package permits dense multi-bank arrays on the same footprint. Combined with a power-fail supervisor and backup source, CMOS stand-by retention preserves calibration data through outages without EEPROM write-wear concerns.
おすすめ
Legacy Embedded Design Maintenance and Second Sourcing
Many fielded 5 V embedded platforms - medical service tools, avionics ground equipment, point-of-sale terminals - specify a Samsung K6X SRAM by name but face supply-chain risk on legacy memory. The K6X0808C1D-BF55 remains procurable (listed 'ships today' on DigiKey and stocked across 8 distributors per Octopart), and the same-family BF50/AF55/G-grade variants plus 62256-compatible Alliance and ISSI parts give procurement a genuine second-source map on an identical 28-pin footprint. Engineering teams can therefore maintain form-fit-function continuity without PCB respin, using drop-in SOP replacements that share CE/OE/WE control conventions and 5 V CMOS levels.
おすすめ
Battery-Backed Data Logging
Energy meters, vending controllers, and remote sensors store accumulated data in nonvolatile-capable SRAM banks built from a 5 V SRAM plus backup cell and supervisor. The K6X0808C1D-BF55 is a strong fit: as static CMOS memory it consumes only stand-by current with CE deselected (see Samsung family datasheet for exact figures), needs no refresh cycles, and its write endurance is effectively unlimited, avoiding the wear-out limits of flash. A comparator-gated chip-enable holds data through brownouts, and the 55 ns access time ensures no timing penalty when the logger wakes to append records. The SOP surface-mount footprint suits compact logger boards.
おすすめ
Automotive Diagnostic and Test Fixtures
Bench fixtures and diagnostic stations servicing 5 V automotive ECUs frequently emulate or intercept ECU memory buses, requiring SRAM with native 5 V CMOS thresholds and standard parallel control. The K6X0808C1D-BF55's 55 ns access and 32K x 8 organization let a fixture CPU transparently shadow ECU address windows, while the SOP package allows fixture-grade rework and replacement. Because the device is asynchronous, emulated memory responds like the original EPROM/SRAM timing without added clocking logic, and generous access-time margin tolerates the cable inductance typical of fixture harnesses. Note: verify temperature grading against the Samsung datasheet for in-vehicle rather than bench-only use.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K6X0808C1D-BF55 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K6X0808C1D-BF50 | K6X0808C1D-AF55 | AS6C62256 | IS62C256AL |
|---|---|---|---|---|---|
| Package | 28-SOP | 28-SOP - same | 28-SOP - same | SOP-28 (62256 footprint) - same | SOP-28 (62256 footprint) - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Alliance Memory | ISSI / Renesas Electronics |
| Organization | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) |
| Supply Voltage | 5 V | 5 V | 5 V | 5 V | 5 V |
| Interface | Asynchronous parallel (CE/OE/WE) | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel |
| Memory Type | CMOS SRAM (no refresh) | CMOS SRAM | CMOS SRAM | CMOS SRAM | CMOS SRAM |
| Pin Compatibility | 62256-style 28-pin | Identical family pinout | Identical family pinout | 62256-compatible | 62256-compatible |
主な差別化要因
- Fastest readily available same-family grade margin （vs K6X0808C1D-BF50)
- Same-family second sourcing without respin （vs K6X0808C1D-AF55)
- Native 5 V CMOS bus levels （vs IS62C256AL)
設計ノート
Keep address and data traces short and matched where possible; at 55 ns access timing the part tolerates typical microcontroller bus stubs, but long ribbon-cable fixture wiring adds inductance and reflections that erode setup margins. Series-terminate data lines (22-33 ohm) if bus length exceeds roughly 15 cm, and verify read-data setup at the CPU against the datasheet access-time specification including output-enable delay.
Place a 0.1 uF ceramic decoupling capacitor directly across VCC/GND at pins 28/14 of the 28-SOP. During deselect, keep CE high to enter CMOS stand-by for minimum current in battery-backed designs - a floating CE via pull-down of a triad can leave input buffers switching and multiply stand-by drain. Tie OE high during write cycles to avoid bus contention on the I/O pins.
Do not operate this 5 V SRAM from a 3.3 V rail; VIH thresholds will not be met and the access-time spec is voided. Also confirm the SOP body width variant when second-sourcing: some 62256-compatible parts ship in both wide (330 mil) and narrow (300/207 mil) SOP bodies, which are NOT footprint-identical. Check the temperature-grade suffix against your ambient range using the Samsung family datasheet, not competitor conventions.
コンプライアンス情報
Compliance status not stated in the provided web data; verify against Samsung product documentation before design-in for regulated markets.
