K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
部品番号: K6X0808C1D-GF55000 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.18 | $4.18 |
| 10 | $3.95 | $39.50 |
| 100 | $3.7 | $370.00 |
| 500 | $3.45 | $1,725.00 |
| 1,000 | $3.2 | $3,200.00 |
K6X0808C1D-GF55000 概要
An asynchronous SRAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit built from cross-coupled inverters. Unlike DRAM, SRAM retains data without refresh as long as power is applied, and unlike synchronous SRAM it does not require a clock signal - address, chip-enable, and write-enable signals directly control read and write cycles. Within the memory hierarchy, SRAM sits at the fast end, and the K6X0808 family serves industrial and embedded designs that need simple, glueless parallel memory expansion.
Key features of the K6X0808C1D-GF55000 include its 32K x 8 organization with a common data I/O bus, three-state outputs for bus sharing, low-power CMOS fabrication, and dedicated active-low chip enable (CE), output enable (OE), and write enable (WE) control pins for straightforward microprocessor interfacing. The 55 ns access time supports a wide range of 5V embedded controllers without wait states.
Technically, the device uses a low-power CMOS cell array with address decoders, sense amplifiers, and write control logic on a single die. Standby power is minimized when CE is deasserted, making the part suitable for battery-backed applications. The GF55000 suffix denotes the 55 ns speed grade and packaging code.
Typical applications include embedded controller code and data buffering, industrial control equipment, test instrumentation, telecom line cards, and legacy 5V system memory upgrades where an asynchronous parallel SRAM footprint must be preserved.
Design consideration: use a single 0.1 uF ceramic decoupling capacitor close to the VCC pin and ensure the 55 ns access time is respected in address-to-data timing analysis at temperature extremes.
This page synthesizes distributor pricing, same-family drop-in speed-grade alternatives, pinout guidance, and practical design notes not consolidated in the manufacturer datasheet.
ドロップイン代替品: K6X0808C1D-GF55000 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K6X0808C1D-GF55000 （同一形状・フットプリント） — 相違点: Technology, Data Bus Width, Access Time, Memory Type, Package.
クイック比較ツール — 並列比較する代替部品を選択:
K6X0808C1D-GF55
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K6X0808C1D-GF70
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K6X0808C1D-GF75
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K6X0808C1D-GF10
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K6X0808C1D-GF12
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K6X0808C1D-GF55000 最大定格＆電気的特性
| メモリタイプ | SRAM - Asynchronous |
| メモリサイズ | 256 Kbit |
| メモリ構成 | 32K x 8 |
| Access Time | 55 ns |
| インターフェース | Parallel |
| 電源電圧 | 5 V |
| 実装タイプ | Surface Mount |
| パッケージ | 28-SOP |
| 出力タイプ | Three-state, common data I/O |
| Control Signals | CE, OE, WE (active low) |
| Memory Format | Volatile, no refresh required |
| Technology | Low-power CMOS |
K6X0808C1D-GF55000 ピン構成
| ピン 1 | NC — Not connected (per datasheet) |
| ピン 2 | A12 — Address input 12 |
| ピン 3 | A7 — Address input 7 |
| ピン 4 | A6 — Address input 6 |
| ピン 5 | A5 — Address input 5 |
| ピン 6 | A4 — Address input 4 |
| ピン 7 | A3 — Address input 3 |
| ピン 8 | A2 — Address input 2 |
| ピン 9 | A1 — Address input 1 |
| ピン 10 | A0 — Address input 0 (LSB) |
| ピン 11 | I/O0 — Data input/output bit 0 |
| ピン 12 | I/O1 — Data input/output bit 1 |
| ピン 13 | I/O2 — Data input/output bit 2 |
| ピン 14 | GND — Ground |
| ピン 15 | I/O3 — Data input/output bit 3 |
| ピン 16 | I/O4 — Data input/output bit 4 |
| ピン 17 | I/O5 — Data input/output bit 5 |
| ピン 18 | I/O6 — Data input/output bit 6 |
| ピン 19 | I/O7 — Data input/output bit 7 (MSB) |
| ピン 20 | CE — Chip enable (active low) |
| ピン 21 | A10 — Address input 10 |
| ピン 22 | OE — Output enable (active low) |
| ピン 23 | A11 — Address input 11 |
| ピン 24 | A9 — Address input 9 |
| ピン 25 | A8 — Address input 8 |
| ピン 26 | A13 — Address input 13 |
| ピン 27 | WE — Write enable (active low) |
| ピン 28 | VCC — Power supply (5 V) |
主な用途
K6X0808C1D-GF55000 の用途: 6 件s: Embedded Controller Memory Expansion, Industrial Control Equipment, Test and Measurement Instrumentation, Telecom Line Cards, Legacy 5V System Memory Upgrades, Battery-Backed Data Retention.
Embedded Controller Memory Expansion
The K6X0808C1D-GF55000 provides glueless byte-wide external memory for 5V 8-bit and 16-bit embedded microcontrollers. Its 55 ns access time matches the address-to-data requirements of typical 5V MCUs without wait states, while the JEDEC-style CE/OE/WE control interface connects directly to standard bus control signals. Placed on the external memory bus with 0.1 uF decoupling per supply pin, the part buffers configuration tables, data logging buffers, or extended program storage. The fully static CMOS array keeps operating power low, and deasserting CE between accesses drops the device into a low-current standby state, an important consideration for always-on industrial nodes with thermal or power constraints.
おすすめ
Industrial Control Equipment
In PLCs, motor controllers, and factory automation modules, the K6X0808C1D-GF55000 stores fault logs, parameter sets, and runtime data. The 32K x 8 organization maps cleanly onto byte-addressable controller buses, and the 55 ns access time keeps memory cycles short even in interrupt-heavy control loops. Because the device is fully static, no refresh scheduling competes with real-time task execution - a decisive advantage over DRAM in deterministic control systems. In designs where parameters must survive power loss, the SRAM is paired with a battery supervisor that gates CE during brownout, leveraging the part's low standby current to extend backup retention for months on a small lithium cell.
おすすめ
Test and Measurement Instrumentation
Bench instruments, data acquisition front ends, and automated test fixtures use the K6X0808C1D-GF55000 as a capture buffer and calibration-data store. The 55 ns access time supports fast readback of sampled data over the parallel bus, and three-state outputs allow the I/O pins to share a common backplane data bus with ADC/DAC controllers. The 5V supply integrates directly with legacy instrument logic families, avoiding level-shift stages. Its asynchronous nature means deterministic access timing that simplifies trigger-to-capture latency analysis - each read or write cycle completes in a bounded 55-70 ns window independent of any clock domain.
おすすめ
Telecom Line Cards
Legacy telecom equipment - T1/E1 line cards, channel banks, and network termination units - historically used 5V asynchronous SRAM for per-channel state tables and framers' temporary storage. The K6X0808C1D-GF55000 fits this role with its 32K x 8 byte-wide organization, 5V tolerance, and 28-SOP surface-mount footprint that matches existing card layouts. The 55 ns grade keeps per-access overhead low across many channel-servicing operations per frame period. Three-state I/O supports shared backplane access among multiple processors and ASICs, and the low standby current matters in telecom racks where per-card power budgets are strictly specified.
おすすめ
Legacy 5V System Memory Upgrades
Maintaining and repairing legacy industrial, medical, and defense equipment often requires exact-form-factor 5V memory. The K6X0808C1D-GF55000 is a direct fit for designs originally qualified around 32K x 8 SRAM in 28-SOP packages: same pinout convention, same control scheme, same supply. Field-service organizations use it to replace failed or end-of-life SRAM without PCB rework, and its 55 ns speed grade safely replaces any slower original part since faster access time never violates read timing. Confirm package body width (e.g., 300 mil vs 330 mil SOP) against the existing footprint before ordering production quantities.
おすすめ
Battery-Backed Data Retention
Applications such as utility meters, access-control panels, and portable instruments must preserve small amounts of data through power interruptions. The K6X0808C1D-GF55000 supports this with fully static CMOS storage: data is retained as long as VCC stays above the datasheet retention voltage, with CE held high to minimize standby drain. A typical circuit uses a diode-OR of main 5V and a backup battery, plus a supervisor that forces CE inactive during power-down to prevent corrupt writes. With standby current in the microamp-to-low-milliamp range typical of this CMOS SRAM class (verify the exact figure in the datasheet), a coin cell can retain the full 32KB for extended periods.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K6X0808C1D-GF55000 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K6X0808C1D-GF55 | K6X0808C1D-GF70 | K6X0808C1D-GF75 | K6X0808C1D-GF10 |
|---|---|---|---|---|---|
| Package | 28-SOP | 28-SOP - same | 28-SOP - same | 28-SOP - same | 28-SOP - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) |
| Access Time | 55 ns | 55 ns | 70 ns | 75 ns | 100 ns |
| Supply Voltage | 5 V | 5 V | 5 V | 5 V | 5 V |
| Interface | Parallel, CE/OE/WE | Parallel, CE/OE/WE | Parallel, CE/OE/WE | Parallel, CE/OE/WE | Parallel, CE/OE/WE |
| Typical Use Case | Fast 5V embedded buses without wait states | Identical (alt ordering code) | Standard embedded buses with timing margin | Slower control buses, cost-sensitive | Slow peripheral buses, lowest cost |
主な差別化要因
- Fastest standard speed grade in the K6X0808C1D family （vs K6X0808C1D-GF70)
- Guaranteed drop-in within its own family （vs K6X0808C1D-GF55)
- Fully static, zero-refresh operation （vs DRAM alternatives in general)
設計ノート
Place a 0.1 uF ceramic decoupling capacitor within 2-3 mm of the VCC (pin 28) to GND (pin 14) pair, plus one bulk 10 uF capacitor per SRAM bank. Keep address and data traces short and length-matched loosely (parallel SRAM timing margins are forgiving at 55 ns). Tie all unused address inputs on smaller memory maps to ground or VCC - do not leave them floating, as floating CMOS inputs increase noise susceptibility and standby current.
Never assert CE and WE low simultaneously during power transitions - this can write garbage bytes into random locations. Use a supervisor circuit that holds CE high (or WE high) until the supply has stabilized, and again during brownout. This is the single most common failure mode in battery-backed SRAM designs. Verify that the microprocessor write-pulse width meets the datasheet minimum write cycle time for the 55 ns grade before qualifying faster processors against an existing footprint.
Estimated: dynamic power scales with access frequency - at a 1 MHz access rate with typical CMOS SRAM operating current on the order of tens of milliamps at 5 V (confirm exact ICC in the Samsung datasheet), dissipation remains below 0.25 W, well within the 28-SOP thermal capability without heatsinking. The dominant power-saving lever is CE management: deassert CE between accesses so the device spends most of its time in standby, which is critical for battery-backed retention designs.
コンプライアンス情報
Compliance data not present in the retrieved web results; consult the Samsung Semiconductor official product page or distributor compliance certificates for RoHS/REACH status.
