MT53E128M32D2DS-053 - 4Gb LPDDR4/LPDDR4X DRAM | Micron
部品番号: MT53E128M32D2DS-053 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.35 | $4.35 |
| 10 | $4.15 | $41.50 |
| 100 | $3.94 | $394.00 |
| 500 | $3.72 | $1,860.00 |
| 1,000 | $3.55 | $3,550.00 |
MT53E128M32D2DS-053 概要
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined mobile DRAM interface optimized for battery-powered and thermally constrained systems. It sits in the memory hierarchy as a mobile SDRAM within the broader DRAM family, below DDR4 in desktop/server use but dominant in smartphones, tablets, automotive infotainment, and embedded computing where low power per bit transfer matters more than raw capacity per DIMM.
Key features include the 4Gbit density in a x32 wide I/O organization, 1866 Mbps/pin data rate, dual-mode LPDDR4/LPDDR4X VDDQ operation, and a compact 200-ball WFBGA footprint. The D2 die revision (suffix DS) and speed grade -053 define the timing bin; per the production data sheet, LPDDR4X operation at 0.6V VDDQ significantly cuts I/O switching power versus LPDDR4 1.10V VDDQ.
Technically, the device is built on Micron Z19M process family and uses a double-die (DDP) stacked construction. Speed grade -053 specifies 1.866 GHz operation; the production data sheet (200-ball x16/x32 LPDDR4/LPDDR4X SDRAM) specifies AC timing, refresh requirements (8x/16x bank refresh), and power-down/ self-refresh modes for mobile power management. Automotive-qualified variants (AUT:A, AAT:A, AIT:A) of the same die are available for AEC-relevant platforms.
Typical applications include smartphone and tablet application-processor memory, automotive infotainment and ADAS buffer memory (AUT/AAT variants), embedded vision, industrial HMI, and edge-AI modules paired with SoCs that integrate an LPDDR4 controller.
Design consideration: choose LPDDR4X 0.6V VDDQ mode when I/O power dominates; verify your SoC memory controller supports both VDDQ settings and the -053 timing bin before layout, since the 200-ball WFBGA footprint is shared across the family but speed bins are not interchangeable in all controllers.
This page synthesizes distributor pricing, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: MT53E128M32D2DS-053 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MT53E128M32D2DS-053 （同一形状・フットプリント） — 相違点: Memory Type, RoHS Status, Organization, Package, Data Rate.
クイック比較ツール — 並列比較する代替部品を選択:
MT53E128M32D2DS-046
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →MT53E128M32D2DS-053 WT:A
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT53E256M32D2DS-053 WT:B
✅ ドロップイン✓ 在庫あり
$21.9 / 個
データシートを見る →MT53D512M32D2DS-053 WT:D
✅ ドロップイン✓ 在庫あり
$6.05 / 個
データシートを見る →MT53E128M32D2DS-053 最大定格＆電気的特性
| メモリタイプ | Mobile LPDDR4 / LPDDR4X SDRAM (unified) |
| Density | 4 Gbit |
| メモリ構成 | 128M x 32 |
| データレート | 1.866 GHz (1866 Mbps/pin) |
| Speed Grade | -053 |
| パッケージ | 200-ball WFBGA (10 x 14.5 mm) |
| VDDQ (LPDDR4X mode) | 0.6 V |
| VDDQ (LPDDR4 mode) | 1.10 V |
| Configuration | DDP (double-die package) |
| 実装タイプ | Surface Mount |
| Automotive Variant | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available |
| RoHS ステータス | Compliant |
| Access Type | Synchronous, bank-group burst |
MT53E128M32D2DS-053 200-ball wfbga (10 x 14.5 mm) ピン配置ガイド
MT53E128M32D2DS-053 (200-ball wfbga (10 x 14.5 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: MT53E128M32D2DS-053.
詳細は データシート をご参照ください。
主な用途
MT53E128M32D2DS-053 の用途: 6 件s: Smartphone and Tablet Main Memory, Automotive Infotainment and Cluster, Industrial Edge-AI Vision Modules, Embedded Computing and HMI, ADAS Sensor-Fusion Processing, Networking and IoT Gateways.
Smartphone and Tablet Main Memory
The MT53E128M32D2DS-053 is a textbook mobile-DRAM fit for smartphones and tablets: its 4Gb (512MB) capacity in a compact 10 x 14.5 mm 200-ball WFBGA conserves board area, while the 1866 Mbps/pin rate keeps application processors fed. Because the die is unified LPDDR4/LPDDR4X, OEMs can run VDDQ at 0.6V (LPDDR4X) to cut I/O power - the dominant memory power term at high utilization - extending battery life versus fixed 1.10V LPDDR4 operation. In the memory subsystem, the device connects directly to the SoC's LPDDR4 controller with fly-by-free point-to-point routing; a key trade-off is that a single x32 device provides one wide channel, so multi-channel designs simply populate one device per channel. DDP construction balances density and die size for cost-effective mid-range platforms.
おすすめ
Automotive Infotainment and Cluster
Automotive head units, digital clusters, and cockpit SoCs need DRAM with automotive screening, and the MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A variants deliver the same 4Gb 128M x32 die in the 200-ball WFBGA with Micron's automotive qualification per the Z19M production data sheet. Graphics rendering and multi-display buffering benefit from the 1866 Mbps data rate, and the LPDDR4X 0.6V VDDQ mode reduces I/O power - important for thermal management in sealed dashboards. Designers must validate the SoC memory controller against the -053 timing bin and respect layout rules for length matching on the 200-ball interface. The trade-off versus commercial WT:A parts is higher unit cost, offset by automotive temperature guarantees and traceability. Availability is confirmed at DigiKey and Mouser with ships-today stock on key variants as of 2026-09-02.
おすすめ
Industrial Edge-AI Vision Modules
Industrial edge-AI vision systems - smart cameras, defect inspection, robotic guidance - use the MT53E128M32D2DS-053 as frame-buffer and neural-network workspace memory. Its 512MB capacity accommodates multiple 1080p frame buffers plus a quantized CNN model, while the x32-wide interface at 1866 Mbps provides the bandwidth to stream sensor frames into the accelerator without starving the pipeline. In thermally constrained fanless enclosures, running the die in LPDDR4X mode at 0.6V VDDQ measurably lowers I/O power and case temperature, improving long-term reliability. Placement close to the SoC with tightly length-matched traces and solid ground reference planes is essential at this data rate. Compared with lower-speed -046 bins, the -053 grade gives ~10-20% more bandwidth headroom for multi-camera fusion workloads on a single 200-ball footprint.
おすすめ
Embedded Computing and HMI
Industrial HMI panels, gateways, and embedded single-board computers pair the MT53E128M32D2DS-053 with mid-range ARM SoCs to run Linux or RTOS stacks. The 4Gb density covers OS, GUI buffers, and application memory in one 200-ball WFBGA device, and the unified LPDDR4/LPDDR4X die lets a single PCB design serve both power profiles - useful when one board spins into a battery-backed and a mains-powered variant. At 1866 Mbps the x32 bus sustains responsive UI rendering and network stack traffic simultaneously. The commercial WT:A version (listed in stock at LCSC from $3.9433 as of 2026-09-02) suits standard industrial temperature designs, while IT:A covers extended temperature requirements. Layout teams should budget decoupling per the Micron datasheet VDD/VDDQ ball groups and keep the controller within the -053 bin's timing budget.
おすすめ
ADAS Sensor-Fusion Processing
Advanced driver-assistance systems fuse camera, radar, and lidar data in SoCs whose working memory must keep pace with sustained multi-gigabit sensor streams. The MT53E128M32D2DS-053 in its automotive AUT:A/AAT:A screening supplies 4Gb at 1866 Mbps/pin for object-tracking buffers and detection-pipeline staging, and its 0.6V VDDQ LPDDR4X mode trims I/O power in ECU thermal envelopes. Micron documents this unified LPDDR4/LPDDR4X product family in the 200-ball x16/x32 automotive production data sheet, giving ADAS teams a single component to qualify across LPDDR4 and LPDDR4X platforms. Design considerations include conforming to the controller's trace-length matching rules and confirming that the -053 bin's latency meets the perception loop's real-time budget. For heavier fusion workloads, the pin-compatible 8Gb family member on the same footprint offers a capacity upgrade without board respin.
おすすめ
Networking and IoT Gateways
IoT gateways, industrial routers, and wireless infrastructure SoCs use LPDDR4 as main system memory where DDR3/DDR4 power budgets are excessive. The MT53E128M32D2DS-053's 512MB at 1866 Mbps comfortably supports packet buffering, TLS session state, and containerized edge applications, while the LPDDR4X 0.6V VDDQ option suits PoE-powered or battery-backed gateways with limited thermal headroom. Its 200-ball WFBGA (10 x 14.5 mm) fits the dense, multi-radio layouts typical of gateway hardware, and the unified LPDDR4/LPDDR4X die protects second-source flexibility across SoC families. Availability is healthy - the WT:A variant is in stock at LCSC and IT:A TR is shipping from DigiKey as of 2026-09-02. Designers should confirm controller support for the -053 speed bin and follow datasheet guidance on ZQ calibration and refresh configuration for sustained network workloads.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT53E128M32D2DS-053 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT53E128M32D2DS-046 | MT53E128M32D2DS-053 WT:A | MT53E256M32D2DS-053 WT:B | MT53D512M32D2DS-053 WT:D |
|---|---|---|---|---|---|
| Package | 200-ball WFBGA (10x14.5 mm) | 200-ball WFBGA - same | 200-ball WFBGA - same | 200-ball WFBGA - same | 200-ball WFBGA - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 8 Gbit | 16 Gbit |
| Organization | 128M x 32 | 128M x 32 | 128M x 32 | 256M x 32 | 512M x 32 |
| Interface Mode | Unified LPDDR4 / LPDDR4X | Unified LPDDR4 / LPDDR4X | Unified LPDDR4 / LPDDR4X | Unified LPDDR4 / LPDDR4X | LPDDR4 (MT53D generation) |
| Temperature Grade | Automotive (AUT/AAT/AIT options) | Multiple grades (IT/AUT available) | Commercial | Commercial | Commercial |
主な差別化要因
- Unified LPDDR4/LPDDR4X die protects platform flexibility （vs MT53D512M32D2DS-053 WT:D)
- Automotive-screened variants of the identical die （vs MT53E128M32D2DS-053 WT:A)
- Speed-bin headroom within the same footprint （vs MT53E128M32D2DS-046)
設計ノート
LPDDR4 routing at 1866 Mbps demands disciplined fly-by-free point-to-point layout: keep DQS/DQ length matching within the tolerance stated in the Micron 200-ball x16/x32 LPDDR4/LPDDR4X production data sheet, route over an unbroken ground reference plane, and avoid crossing power splits under data groups. Place the MT53E128M32D2DS-053 as close to the SoC memory controller as practical; every extra centimeter of trace adds skew and degrades timing margin at the -053 bin. Follow the datasheet ball-map decoupling assignments for each VDD/VDDQ ball group with low-ESR ceramic capacitors.
Because this die is unified LPDDR4/LPDDR4X, the VDDQ rail must be designed for the target mode: 1.10V for LPDDR4 or 0.6V for LPDDR4X. Since I/O dynamic power scales with VDDQ squared, LPDDR4X operation at high data rates yields substantial power savings, but the SoC controller must support the chosen VDDQ. Use a dedicated low-noise PMIC rail with good load transient response for VDDQ; do not share it with noisy core rails. Estimated: I/O power at 1866 Mbps drops roughly 70% going from 1.10V to 0.6V (factor of (0.6/1.10)^2 = 0.30) - verify against datasheet ICC tables for your workload.
Do not mix speed bins blindly: the -053 (1866 Mbps) and -046 parts share the same 200-ball footprint but are not interchangeable in all memory controllers - confirm your SoC's supported timing bins before dropping in the slower part. Also distinguish variants clearly when ordering: WT (commercial), IT (industrial), and AUT/AAT/AIT (automotive) share electricals but carry different qualification and temperature guarantees per the Z19M production data sheet. Finally, honor datasheet ZQ calibration and refresh (8x/16x) configuration; omitting ZQ resistor placement per the ball map is a common bring-up failure.
コンプライアンス情報
RoHS compliance indicated by distributor listings (DigiKey/Mouser) for automotive-variant parts; automotive qualification per Micron Z19M production data sheet family. AEC-Q100 status not explicitly stated in provided data.
