MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MPN: MT53E256M32D2DS-053 WT:B β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $27.23 | $27.23 |
| 10 | $25.9 | $259.00 |
| 100 | $24.5 | $2,450.00 |
| 500 | $23.2 | $11,600.00 |
| 1,000 | $21.9 | $21,900.00 |
Drop-in alternatives for MT53E256M32D2DS-053 WT:B β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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MT53E256M32D2DS-046
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$9.1 / Unit
View Datasheet βMT53E256M32D2DS-053 AIT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E256M32D2DS-053 AAT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E256M32D2DS-053 AUT:B
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MT53D512M32D2DS-053 WT:D
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$6.05 / Unit
View Datasheet βMT53E256M32D2DS-053 WT:B Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit (256M x 32) |
| Organization | 256M x 32 |
| Data Rate | 1866 Mbps/pin (1.866 GHz) |
| Supply Voltage (VDD2/VDDQ) | 1.1 V |
| Operating Temperature (WT grade) | -30C to +85C |
| Package | 200-ball WFBGA, 10 x 14.5 mm |
| Mounting Type | Surface Mount (BGA) |
| Self-Refresh | Auto self-refresh with built-in temperature sensor |
| Features | Auto precharge, write leveling, ZQ calibration |
| Bus Width | 32-bit |
| Peak Bandwidth (per device) | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| RoHS Status | Compliant (per JLCPCB/LCSC listing) |
MT53E256M32D2DS-053 WT:B [data_needed: max package height] Pin Configuration Guide
Complete pinout information for MT53E256M32D2DS-053 WT:B ([data_needed: max package height] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: max package height] package pinout diagram for MT53E256M32D2DS-053 WT:B](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for MT53E256M32D2DS-053 WT:B.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT53E256M32D2DS-053 WT:B is suitable for 6 applications: Embedded Single-Board Computers, Industrial HMI and Automation Panels, Automotive Infotainment and Clusters, Networking and Communication Equipment, Medical Diagnostic and Monitoring Devices, Portable and Battery-Powered Devices.
Embedded Single-Board Computers
The MT53E256M32D2DS-053 fits embedded SBC designs that need roughly 1-2 GB of DRAM: two 8Gb devices on a 32-bit or 64-bit LPDDR4 bus deliver 2-4 GB with up to 7.46 GB/s per device at 1866 Mbps. Its 1.1V operation and auto self-refresh with built-in temperature sensor keep idle power low in passively cooled enclosures, while the WFBGA-200 (10 x 14.5 mm) footprint suits compact carrier boards. Because the interface follows the standard LPDDR4 protocol, it pairs directly with NXP i.MX 8M, Rockchip, and TI Sitara controllers, requiring only controller-side timing configuration for the -053 speed grade.
Recommended
Industrial HMI and Automation Panels
Industrial human-machine interface panels demand memory that survives -30C to +85C ambient swings near motors and drives. The MT53E256M32D2DS-053 WT:B covers this range, and its auto self-refresh with an internal temperature sensor adapts refresh timing automatically, eliminating external thermal compensation. The 8Gb (256M x 32) density supports graphics frame buffers for modern touch UIs, while 1866 Mbps bandwidth keeps rendering responsive. For factories with extended qualification requirements, the AIT:B variant in the same 200-ball WFBGA package provides identical performance with industrial qualification - no PCB change is needed to upgrade the temperature grade.
Recommended
Automotive Infotainment and Clusters
For digital cockpit, cluster, and telematics platforms, Micron supplies the MT53E256M32D2DS-053 AAT:B and AUT:B automotive grades of this exact die in the same 200-ball WFBGA package. These variants retain the 8Gb density, 256M x 32 organization, and 1866 Mbps speed of the WT:B while adding automotive temperature and qualification coverage, enabling one memory footprint across consumer prototypes and production-vehicle builds. LPDDR4's 1.1V operation reduces memory subsystem power, important for always-on cluster designs, and the 7.46 GB/s per-device bandwidth supports multi-display rendering with mainstream automotive SoCs.
Recommended
Networking and Communication Equipment
Enterprise access points, small-business routers, and industrial gateways use LPDDR4 to buffer packets and run embedded Linux. The MT53E256M32D2DS-053 provides 8Gb per device; stacking two devices on a 64-bit bus yields 2 GB at up to 14.9 GB/s aggregate, sufficient for NAT-heavy workloads at gigabit rates. The 1.1V core supply cuts memory power relative to DDR3L solutions, helping meet fanless thermal budgets, and the WFBGA-200 ball map supports standard six-layer routing at 1866 Mbps. Its auto precharge and ZQ calibration features simplify controller tuning across temperature extremes common in outdoor telecom enclosures.
Recommended
Medical Diagnostic and Monitoring Devices
Benchtop medical analyzers and portable patient monitors need memory that runs cool and starts reliably. The MT53E256M32D2DS-053 WT:B draws 1.1V on the memory rail, limiting device heat contribution in sealed enclosures, and its auto self-refresh with built-in temperature sensor maintains data integrity across the -30C to +85C storage and operating excursions of clinical logistics. The 8Gb density supports image processing for ultrasound probes and camera-based diagnostics, while 1866 Mbps bandwidth keeps acquisition pipelines responsive. RoHS compliance per LCSC/JLCPCB listings aligns with medical manufacturing environmental requirements.
Recommended
Portable and Battery-Powered Devices
Handheld data collectors, rugged tablets, and test instruments benefit directly from LPDDR4's power profile. The MT53E256M32D2DS-053 operates at 1.1V and supports deep low-power states with auto self-refresh, extending battery runtime during standby - a key advantage over DDR3L designs. Per-device bandwidth of roughly 7.46 GB/s at 1866 Mbps supports responsive application performance, and the compact 10 x 14.5 mm WFBGA-200 package fits slim enclosures. The WT temperature grade plus the built-in temperature sensor handles both pocket-portable and vehicle-docked thermal conditions without firmware-managed refresh adjustments.
Recommended
Recommended Products Summary
Engineering reference data for MT53E256M32D2DS-053 WT:B β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53E256M32D2DS-046 | MT53E256M32D2DS-053 AIT:B | MT53E256M32D2DS-053 AAT:B | MT53D512M32D2DS-053 WT:D |
|---|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 8 Gbit (256M x 32) | 8 Gbit (256M x 32) | 8 Gbit (256M x 32) | 8 Gbit (256M x 32) | 4 Gbit (128M x 32) |
| Data Rate | 1866 Mbps (-053) | 1600 Mbps (-046) | 1866 Mbps (-053) | 1866 Mbps (-053) | 1866 Mbps (-053) |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Temperature Grade | WT (-30C to +85C) | [DATA_NEEDED] | IT (industrial) | AT (automotive) | WT (-30C to +85C) |
| Automotive Qualification | No (WT consumer/industrial) | [DATA_NEEDED] | No (industrial) | Yes (automotive grade) | No (WT grade) |
| Family Generation | MT53E (current) | MT53E (current) | MT53E (current) | MT53E (current) | MT53D (legacy, migrating toward MT53E) |
Key Differentiators
- Highest speed grade in the same footprint (vs MT53E256M32D2DS-046)
- Current-generation MT53E family supply security (vs MT53D512M32D2DS-053 WT:D)
- Automotive upgrade path without redesign (vs MT53E256M32D2DS-053 AAT:B)
Design Notes
At the -053 grade's 1866 Mbps data rate, LPDDR4 signal integrity dominates layout success. Route the 32-bit DQ bus with length-matched byte groups (DQ to its DQS strobe kept tightly matched), reference a continuous ground plane, and avoid crossing plane splits under the memory bus. Follow Micron's WFBGA-200 footprint and routing guidelines for CA/CK fly-by topology and on-die termination settings. Eye-mask compliance at 1866 Mbps typically requires 6+ layer PCBs with controlled impedance; simulate with the controller's IBIS models before committing the stackup.
The MT53E256M32D2DS-053 runs from a 1.1V LPDDR4 supply domain. Select a PMIC with a dedicated LPDDR4-rated 1.1V rail and follow the controller's power-sequencing requirements (VDD2/VDDQ ramp relationships). Decouple the VDD balls of the WFBGA-200 with a dense array of small ceramics placed close to the package, since LPDDR4 burst currents are fast and localized. Estimated: at full read bursts the per-device current is on the order of hundreds of milliamps; verify with Micron's current-loading spreadsheet or DRAM power calculator using your actual utilization profile.
ZQ calibration requires the datasheet-specified precision reference resistor routed as a quiet analog trace to the ZQ ball - do not share or length-match it into the data bus. Also confirm the temperature grade suffix before release: WT:B (-30C to +85C), AIT:B (industrial), and AAT:B (automotive) share one footprint, so a BOM substitution of suffix alone changes qualification status. Finally, the legacy MT53D generation is being phased out in several grades per Micron migration notices; design new boards on MT53E family parts to avoid forced re-qualification.
Compliance Information
RoHS compliance indicated by JLCPCB listing for MT53E256M32D2DS-053 WT:B. Automotive-grade suffix variants (AAT:B/AUT:B) exist for automotive qualification programs. Other compliance statuses not stated in provided data.
