UCC21521ADW - 4A/6A 5.7kVrms Isolated Gate Driver | TI
部品番号: UCC21521ADW ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.03 | $3.03 |
| 10 | $2.75 | $27.50 |
| 100 | $2.42 | $242.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.96 | $1,960.00 |
UCC21521ADW 概要
An isolated gate driver is a power management IC that translates low-voltage logic signals across a galvanic isolation barrier to drive the gate of a power semiconductor such as a MOSFET, SiC FET, or IGBT. Within the power-supply and motor-control hierarchy, it sits between the PWM controller or microcontroller and the power stage, providing both the high peak currents needed for fast switching and the reinforced isolation needed for safety and level shifting.
Key features include the universal configuration supporting dual low-side, dual high-side, or half-bridge operation, fast 19-ns typical propagation delay, 10-ns minimum input pulse width, and 5-ns maximum interchannel delay matching. The 4-A/6-A asymmetric source/sink drive accelerates turn-off to reduce switching losses in hard-switched converters. A programmable dead-time feature prevents shoot-through in half-bridge topologies, and the enable pin allows global shutdown for fault handling.
The device uses TI capacitive isolation technology with a 5700-Vrms working isolation rating and 8-V undervoltage lockout on the output-side supply to guarantee complete gate enhancement before operation. Operating temperature spans -40C to +125C, supporting industrial power conversion, motor drives, solar inverters, and on-board chargers.
Typical applications include half-bridge and full-bridge stages in server and telecom power supplies, three-phase inverters in motor drives, and isolated DC-DC converters where fast, precisely matched gate drive improves efficiency.
For design, ensure the output-side VDD meets the 8-V UVLO threshold with adequate local decoupling, and size the dead time for the target power switch.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: UCC21521ADW — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: UCC21521ADW （同一形状・フットプリント） — 相違点: Isolation Rating, Package.
クイック比較ツール — 並列比較する代替部品を選択:
UCC21521ADWR
✅ ドロップイン✓ 在庫あり
$2.41 / 個
データシートを見る →UCC21520ADW
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC21540ADW
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC21521ADWR
✅ ドロップイン✓ 在庫あり
$2.41 / 個
データシートを見る →UCC21521ADW 最大定格＆電気的特性
| Channel Count | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Rating | 5700 Vrms |
| Isolation Technology | Capacitive coupling |
| Propagation Delay (Typ) | 19 ns |
| Minimum Input Pulse Width | 10 ns |
| Maximum Delay Matching | 5 ns |
| UVLO Threshold | 8 V |
| Configuration | Dual low-side / dual high-side / half-bridge (universal) |
| Input Type | Dual input |
| イネーブルピン | Yes |
| Dead Time | Programmable |
| 動作温度範囲 | -40C to +125C |
| パッケージ | SOIC-16 (DW), 16 pins |
| 実装タイプ | Surface Mount |
UCC21521ADW soic-16 (dw), 16 pins ピン配置ガイド
UCC21521ADW (soic-16 (dw), 16 pins パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: UCC21521ADW.
詳細は データシート をご参照ください。
主な用途
UCC21521ADW の用途: 6 件s: Half-Bridge Power Supplies, SiC MOSFET Motor Drives, Solar String Inverters, On-Board Chargers and EV Power Conversion, Industrial Motor Drives and Servo Amplifiers, Isolated DC-DC Converters.
Half-Bridge Power Supplies
The UCC21521ADW is purpose-built for half-bridge stages in server, telecom, and industrial power supplies. Its universal configuration drives the high-side and low-side switch from one package, while 5-ns maximum delay matching keeps effective dead time tight, directly reducing body-diode conduction loss. The 4-A source current charges large MOSFET gate capacitances quickly, and the 6-A sink current pulls the gate below threshold fast to minimize switching loss at 100-500 kHz. The programmable dead time adds shoot-through protection independent of the PWM controller. Place a local 1-uF plus 100-nF decoupling pair on the output-side VDD to support 6-A gate-current pulses.
おすすめ
SiC MOSFET Motor Drives
In three-phase inverter motor drives using SiC MOSFETs, the UCC21521ADW provides the fast, tightly matched gate drive that wide-bandgap switches demand. The 19-ns typical propagation delay and 10-ns minimum pulse width preserve PWM edge integrity at high carrier frequencies, while the 5700-Vrms reinforced isolation separates the control electronics from the DC bus. The 6-A sink strength prevents Miller-induced turn-on glitches during high dv/dt switching events. The enable pin allows the MCU to gate off all phases instantly during overcurrent faults. Verify the 8-V UVLO aligns with the chosen SiC gate-drive rail, typically 15-18 V, for reliable full enhancement.
おすすめ
Solar String Inverters
Grid-tied solar inverters combine an MPPT boost stage with a DC-AC half-bridge or full-bridge output stage, both of which benefit from the UCC21521ADW. Its 5700-Vrms isolation rating satisfies the reinforced isolation boundary between the PV input/control domain and the grid-connected power stage. The 5-ns channel matching minimizes dead-time distortion in the output bridge, improving THD, and the 4-A/6-A drive supports paralleled FETs for higher power ratings. The -40C to +125C operating range covers outdoor inverter environments. The programmable dead time can be tuned per switching frequency to balance efficiency against shoot-through margin across the full temperature range.
おすすめ
On-Board Chargers and EV Power Conversion
EV on-board chargers and DC-DC converters require reinforced isolation between the high-voltage battery domain and the low-voltage chassis domain, exactly what the UCC21521ADW's 5700-Vrms capacitive isolation provides. The 19-ns propagation delay supports the 200-500 kHz switching frequencies typical of LLC and totem-pole PFC stages, while the 6-A sink current keeps SiC and superjunction MOSFET turn-off crisp to limit EMI. The 8-V UVLO prevents partial-enhancement operation during bias-rail startup. For an automotive program, evaluate the automotive-qualified variants within TI's isolated driver portfolio and confirm AEC-Q100 grade against the specific ECU requirements before design-in.
おすすめ
Industrial Motor Drives and Servo Amplifiers
Industrial servo drives and general-purpose VFDs use six switches per inverter, and the UCC21521ADW covers each half-bridge phase leg with one package, reducing component count versus single-channel drivers. The 5-ns delay matching across channels keeps all three phase legs symmetric, minimizing torque ripple at low speed. Its -40C to +125C range suits cabinet-mounted drives near heatsinks, and the enable pin supports safe-torque-off behavior by pulling all gates low on a single control signal. The 6-A sink current improves immunity to dV/dt-induced spurious turn-on with long gate-loop layouts common in IGBT modules. Add a dedicated pulldown resistor on the enable line to default-disable outputs at power-up.
おすすめ
Isolated DC-DC Converters
Push-pull, half-bridge, and full-bridge isolated DC-DC converters in telecom rectifiers and energy-storage systems use the UCC21521ADW to drive primary-side switches with reinforced isolation from the control ground. The dual low-side configuration suits push-pull and full-bridge primary ends where both switch sources sit on the primary ground, eliminating the need for high-side floating supplies in those topologies. The 10-ns minimum pulse width supports the narrow duty-cycle operation used in fixed-frequency phase-shifted bridges, and the 19-ns delay keeps transformer volt-second balance predictable. Local 100-nF decoupling at each VDD pin is essential for the 6-A sink-current transients during transformer reset.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: UCC21521ADW — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | UCC21521ADWR | UCC21520ADW | UCC21540ADW |
|---|---|---|---|---|
| Package | SOIC-16 (DW) | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source / Sink Current | 4 A / 6 A | 4 A / 6 A | 4 A / 6 A | 4 A / 6 A |
| Isolation Rating | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms |
| Propagation Delay (Typ) | 19 ns | 19 ns | 19 ns (family typical) | 19 ns (family typical) |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C |
主な差別化要因
- Programmable dead time enforced in the driver （vs UCC21520ADW)
- Enable pin for single-signal global shutdown （vs UCC21540ADW)
- 6-A sink strength reduces turn-off loss （vs UCC21521ADWR (vs generic 2-A class drivers))
設計ノート
Decouple the output-side supply (VDD) with a 1-uF ceramic in parallel with 100-nF placed within 5 mm of the VDD pin, and return the loop directly to the driver GND through a low-inductance via pair. The 6-A sink current creates fast di/dt transients; keep the gate-loop area of each channel minimal and route gate and return traces as a tight pair. Separate the power-ground return of the gate loop from the signal ground under the input side to prevent dv/dt-coupled jitter on INA/INB.
The 8-V UVLO means the isolated bias rail must reliably exceed 8 V before switching; a bootstrap-based supply that sags below this during startup will produce erratic low-side-only operation. Confirm the minimum input pulse width of 10 ns against your PWM peripheral - pulses shorter than 10 ns may be rejected, causing missed cycles at extreme duty cycles or dead times. Also verify the dead-time programming resistor value against the datasheet equation at temperature extremes before release.
The capacitive isolation barrier tolerates high common-mode dv/dt, but layout still matters: keep the two channels' gate-drive returns symmetrical to preserve the 5-ns delay-matching benefit, and avoid routing INA/INB control traces parallel to gate-return traces where Miller currents flow. Use a 2-4 ohm external gate resistor per channel, split into turn-on and turn-off paths if you need independent edge control; the 6-A sink path lets you size a smaller turn-off resistor for lower switching loss without overshooting gate ringing limits.
Estimated: gate-drive dissipation is dominated by Qg switching, not quiescent loss. For a 100-nC MOSFET switched at 200 kHz from a 15-V rail, each channel dissipates roughly P = Qg x VDD x f = 0.3 W, so both channels plus driver internal loss total well under 1 W - within SOIC-16 capability with standard copper pour. For larger SiC modules or >300 kHz operation, recalculate and consider wider copper under the package to keep junction temperature below 125C.
コンプライアンス情報
Compliance status not stated in the retrieved web data; verify RoHS/REACH status on the TI product page (ti.com/product/UCC21521) quality section before order release.
