UCC21521ADW - 4A/6A 5.7kVrms Isolated Gate Driver | TI
부품 번호: UCC21521ADW ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.03 | $3.03 |
| 10 | $2.75 | $27.50 |
| 100 | $2.42 | $242.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.96 | $1,960.00 |
UCC21521ADW 개요
An isolated gate driver is a power management IC that translates low-voltage logic signals across a galvanic isolation barrier to drive the gate of a power semiconductor such as a MOSFET, SiC FET, or IGBT. Within the power-supply and motor-control hierarchy, it sits between the PWM controller or microcontroller and the power stage, providing both the high peak currents needed for fast switching and the reinforced isolation needed for safety and level shifting.
Key features include the universal configuration supporting dual low-side, dual high-side, or half-bridge operation, fast 19-ns typical propagation delay, 10-ns minimum input pulse width, and 5-ns maximum interchannel delay matching. The 4-A/6-A asymmetric source/sink drive accelerates turn-off to reduce switching losses in hard-switched converters. A programmable dead-time feature prevents shoot-through in half-bridge topologies, and the enable pin allows global shutdown for fault handling.
The device uses TI capacitive isolation technology with a 5700-Vrms working isolation rating and 8-V undervoltage lockout on the output-side supply to guarantee complete gate enhancement before operation. Operating temperature spans -40C to +125C, supporting industrial power conversion, motor drives, solar inverters, and on-board chargers.
Typical applications include half-bridge and full-bridge stages in server and telecom power supplies, three-phase inverters in motor drives, and isolated DC-DC converters where fast, precisely matched gate drive improves efficiency.
For design, ensure the output-side VDD meets the 8-V UVLO threshold with adequate local decoupling, and size the dead time for the target power switch.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: UCC21521ADW — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: UCC21521ADW (동일 폼 팩터 및 풋프린트) — 차이점: Isolation Rating, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UCC21521ADWR
✅ 드롭인✓ 재고 있음
$2.41 / 개
데이터시트 보기 →UCC21520ADW
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
UCC21540ADW
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
UCC21521ADWR
✅ 드롭인✓ 재고 있음
$2.41 / 개
데이터시트 보기 →UCC21521ADW 최대 정격 & 전기적 특성
| Channel Count | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Rating | 5700 Vrms |
| Isolation Technology | Capacitive coupling |
| Propagation Delay (Typ) | 19 ns |
| Minimum Input Pulse Width | 10 ns |
| Maximum Delay Matching | 5 ns |
| UVLO Threshold | 8 V |
| Configuration | Dual low-side / dual high-side / half-bridge (universal) |
| Input Type | Dual input |
| 인에이블 핀 | Yes |
| Dead Time | Programmable |
| 동작 온도 범위 | -40C to +125C |
| 패키지 | SOIC-16 (DW), 16 pins |
| 실장 유형 | Surface Mount |
UCC21521ADW soic-16 (dw), 16 pins 핀 구성 가이드
UCC21521ADW(soic-16 (dw), 16 pins 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: UCC21521ADW.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
UCC21521ADW 적합 용도: 6 애플리케이션s: Half-Bridge Power Supplies, SiC MOSFET Motor Drives, Solar String Inverters, On-Board Chargers and EV Power Conversion, Industrial Motor Drives and Servo Amplifiers, Isolated DC-DC Converters.
Half-Bridge Power Supplies
The UCC21521ADW is purpose-built for half-bridge stages in server, telecom, and industrial power supplies. Its universal configuration drives the high-side and low-side switch from one package, while 5-ns maximum delay matching keeps effective dead time tight, directly reducing body-diode conduction loss. The 4-A source current charges large MOSFET gate capacitances quickly, and the 6-A sink current pulls the gate below threshold fast to minimize switching loss at 100-500 kHz. The programmable dead time adds shoot-through protection independent of the PWM controller. Place a local 1-uF plus 100-nF decoupling pair on the output-side VDD to support 6-A gate-current pulses.
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SiC MOSFET Motor Drives
In three-phase inverter motor drives using SiC MOSFETs, the UCC21521ADW provides the fast, tightly matched gate drive that wide-bandgap switches demand. The 19-ns typical propagation delay and 10-ns minimum pulse width preserve PWM edge integrity at high carrier frequencies, while the 5700-Vrms reinforced isolation separates the control electronics from the DC bus. The 6-A sink strength prevents Miller-induced turn-on glitches during high dv/dt switching events. The enable pin allows the MCU to gate off all phases instantly during overcurrent faults. Verify the 8-V UVLO aligns with the chosen SiC gate-drive rail, typically 15-18 V, for reliable full enhancement.
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Solar String Inverters
Grid-tied solar inverters combine an MPPT boost stage with a DC-AC half-bridge or full-bridge output stage, both of which benefit from the UCC21521ADW. Its 5700-Vrms isolation rating satisfies the reinforced isolation boundary between the PV input/control domain and the grid-connected power stage. The 5-ns channel matching minimizes dead-time distortion in the output bridge, improving THD, and the 4-A/6-A drive supports paralleled FETs for higher power ratings. The -40C to +125C operating range covers outdoor inverter environments. The programmable dead time can be tuned per switching frequency to balance efficiency against shoot-through margin across the full temperature range.
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On-Board Chargers and EV Power Conversion
EV on-board chargers and DC-DC converters require reinforced isolation between the high-voltage battery domain and the low-voltage chassis domain, exactly what the UCC21521ADW's 5700-Vrms capacitive isolation provides. The 19-ns propagation delay supports the 200-500 kHz switching frequencies typical of LLC and totem-pole PFC stages, while the 6-A sink current keeps SiC and superjunction MOSFET turn-off crisp to limit EMI. The 8-V UVLO prevents partial-enhancement operation during bias-rail startup. For an automotive program, evaluate the automotive-qualified variants within TI's isolated driver portfolio and confirm AEC-Q100 grade against the specific ECU requirements before design-in.
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Industrial Motor Drives and Servo Amplifiers
Industrial servo drives and general-purpose VFDs use six switches per inverter, and the UCC21521ADW covers each half-bridge phase leg with one package, reducing component count versus single-channel drivers. The 5-ns delay matching across channels keeps all three phase legs symmetric, minimizing torque ripple at low speed. Its -40C to +125C range suits cabinet-mounted drives near heatsinks, and the enable pin supports safe-torque-off behavior by pulling all gates low on a single control signal. The 6-A sink current improves immunity to dV/dt-induced spurious turn-on with long gate-loop layouts common in IGBT modules. Add a dedicated pulldown resistor on the enable line to default-disable outputs at power-up.
추천
Isolated DC-DC Converters
Push-pull, half-bridge, and full-bridge isolated DC-DC converters in telecom rectifiers and energy-storage systems use the UCC21521ADW to drive primary-side switches with reinforced isolation from the control ground. The dual low-side configuration suits push-pull and full-bridge primary ends where both switch sources sit on the primary ground, eliminating the need for high-side floating supplies in those topologies. The 10-ns minimum pulse width supports the narrow duty-cycle operation used in fixed-frequency phase-shifted bridges, and the 19-ns delay keeps transformer volt-second balance predictable. Local 100-nF decoupling at each VDD pin is essential for the 6-A sink-current transients during transformer reset.
추천
추천 제품 요약
엔지니어링 참조 데이터: UCC21521ADW — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UCC21521ADWR | UCC21520ADW | UCC21540ADW |
|---|---|---|---|---|
| Package | SOIC-16 (DW) | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source / Sink Current | 4 A / 6 A | 4 A / 6 A | 4 A / 6 A | 4 A / 6 A |
| Isolation Rating | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms |
| Propagation Delay (Typ) | 19 ns | 19 ns | 19 ns (family typical) | 19 ns (family typical) |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C |
주요 차별점
- Programmable dead time enforced in the driver (vs UCC21520ADW)
- Enable pin for single-signal global shutdown (vs UCC21540ADW)
- 6-A sink strength reduces turn-off loss (vs UCC21521ADWR (vs generic 2-A class drivers))
설계 노트
Decouple the output-side supply (VDD) with a 1-uF ceramic in parallel with 100-nF placed within 5 mm of the VDD pin, and return the loop directly to the driver GND through a low-inductance via pair. The 6-A sink current creates fast di/dt transients; keep the gate-loop area of each channel minimal and route gate and return traces as a tight pair. Separate the power-ground return of the gate loop from the signal ground under the input side to prevent dv/dt-coupled jitter on INA/INB.
The 8-V UVLO means the isolated bias rail must reliably exceed 8 V before switching; a bootstrap-based supply that sags below this during startup will produce erratic low-side-only operation. Confirm the minimum input pulse width of 10 ns against your PWM peripheral - pulses shorter than 10 ns may be rejected, causing missed cycles at extreme duty cycles or dead times. Also verify the dead-time programming resistor value against the datasheet equation at temperature extremes before release.
The capacitive isolation barrier tolerates high common-mode dv/dt, but layout still matters: keep the two channels' gate-drive returns symmetrical to preserve the 5-ns delay-matching benefit, and avoid routing INA/INB control traces parallel to gate-return traces where Miller currents flow. Use a 2-4 ohm external gate resistor per channel, split into turn-on and turn-off paths if you need independent edge control; the 6-A sink path lets you size a smaller turn-off resistor for lower switching loss without overshooting gate ringing limits.
Estimated: gate-drive dissipation is dominated by Qg switching, not quiescent loss. For a 100-nC MOSFET switched at 200 kHz from a 15-V rail, each channel dissipates roughly P = Qg x VDD x f = 0.3 W, so both channels plus driver internal loss total well under 1 W - within SOIC-16 capability with standard copper pour. For larger SiC modules or >300 kHz operation, recalculate and consider wider copper under the package to keep junction temperature below 125C.
규정 준수 정보
Compliance status not stated in the retrieved web data; verify RoHS/REACH status on the TI product page (ti.com/product/UCC21521) quality section before order release.