1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
부품 번호: 1ED3124MU12HXUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.64 | $1.64 |
| 10 | $1.54 | $15.40 |
| 100 | $1.38 | $138.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.05 | $1,050.00 |
| 3,000 | $0.89 | $2,670.00 |
1ED3124MU12HXUMA1 개요
An isolated gate driver is a semiconductor device that provides galvanic isolation between the low-voltage control side (MCU, DSP, or FPGA) and the high-voltage power switch side. It belongs to the hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Isolation is mandatory in high-voltage power converters because the control logic operates at safe extra-low voltage while the power switches commutate at hundreds or thousands of volts; without isolation, fault transients would destroy the controller. The 1ED31xx family uses Infineon's coreless transformer (CT) technology to transfer both the gate signal and isolated power across the barrier.
Key features include separate source and sink output pins for independent turn-on and turn-off gate path optimization, a 10.5 V undervoltage lockout (UVLO) threshold matched to common 12 V gate-drive rails, 40 kV/us minimum common-mode transient immunity (CMTI), and built-in short-circuit clamping plus active Miller clamp support (the 1ED3124 variant specifically offers separate output versus the 1ED3114 which provides active Miller clamp). The wide-body DSO-8 package provides the creepage and clearance required by IEC 60664-1 for reinforced insulation at 1200 V working voltage.
Typical applications include industrial variable-frequency drives (VFDs), solar string inverters, EV traction and onboard chargers, UPS systems, induction heating, welding power supplies and three-phase servo drives. The device is qualified per Infineon's industrial grade reliability profile (-40C to +125C) and is part of the EiceDRIVER Compact family, designed to pair with Infineon TRENCHSTOP IGBT7 and CoolSiC MOSFET discrete and module platforms.
When designing with this driver, observe the recommended gate resistor placement (separate Rg_on and Rg_off) and ensure the bootstrap or isolated supply rail provides at least 1 uF of local decoupling on both VCC and VBS rails. Designers should also verify PCB creepage and clearance to comply with the end-product safety standard (IEC 61800-5-1 for drives, IEC 62109 for solar inverters). The wide-body package is footprint-compatible across the 1ED31xx Compact family (1ED311x, 1ED312x, 1ED313x variants), enabling PCB reuse across multiple output configurations.
This page synthesizes distributor pricing, drop-in same-family alternatives from the 1ED31xx Compact family, cross-brand equivalents, and practical design notes not found on a single manufacturer datasheet.
드롭인 대체품: 1ED3124MU12HXUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 1ED3124MU12HXUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Isolation Technology, Product Type, Common-Mode Transient Immunity (CMTI), Driver Configuration.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
1ED3114MU12H
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
1ED3134MU12H
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
1EDI60N12AFXUMA1
✅ 드롭인✓ 재고 있음
$2.21 / 개
데이터시트 보기 →1EDB7275FXUMA1
✅ 드롭인✓ 재고 있음
$1.68 / 개
데이터시트 보기 →1EDN6550BXTSA1
✅ 드롭인✓ 재고 있음
$0.44 / 개
데이터시트 보기 →1ED3124MU12HXUMA1 최대 정격 & 전기적 특성
| Product Type | Single-channel isolated gate driver IC |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | 14 A typical |
| 출력 구성 | Separate source and sink pins |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | 1200 V |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum |
| Propagation Delay (typ.) | 90 ns |
| UVLO Threshold | 10.5 V |
| Isolation Technology | Coreless transformer (CT) |
| 패키지 | PG-DSO-8-66 (DSO-8 wide-body) |
| Creepage Distance | >8 mm |
| 동작 온도 범위 | -40C to +125C |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules |
| 실장 유형 | Surface Mount |
| MSL 레벨 | MSL2 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant |
1ED3124MU12HXUMA1 핀 구성
| 핀 1 | VCC1 — Primary-side (LV) 5 V supply, decoupled to GND1 |
| 핀 2 | GND1 — Primary-side ground reference |
| 핀 3 | IN+ — Non-inverting gate driver input |
| 핀 4 | IN- — Inverting gate driver input (tie to IN+ if non-inverting operation) |
| 핀 5 | VCC2 — Secondary-side (HV) supply, decoupled to GND2 |
| 핀 6 | GND2 — Secondary-side ground reference |
| 핀 7 | OUT_S — Gate source (turn-on) output pin |
| 핀 8 | OUT_SINK — Gate sink (turn-off) output pin |
일반적인 애플리케이션
1ED3124MU12HXUMA1 적합 용도: 7 애플리케이션s: Industrial Variable-Frequency Drives (VFDs), Solar String Inverters, EV Traction Inverters and Onboard Chargers, Uninterruptible Power Supplies (UPS), Induction Heating and Welding Power Supplies, Three-Phase Servo Drives and Robotics, SiC MOSFET Discrete Half-Bridge Stages.
Industrial Variable-Frequency Drives (VFDs)
The 1ED3124MU12HXUMA1 fits three-phase 1200 V industrial VFDs because its 14 A peak source/sink current directly drives TRENCHSTOP IGBT7 modules up to the 2300 V class without an external booster stage. The 5.7 kV (rms) UL 1577 isolation per the Infineon datasheet lets the driver sit on the high-voltage side while the MCU remains safely referenced to ground, eliminating the need for opto-isolated gate signal chains. The 200 kV/us CMTI immunity handles the dV/dt of hard-switched IGBT bridges without false triggering, and the 90 ns propagation delay supports >20 kHz switching frequency. Place 1 uF X7R ceramic bypass on both VCC rails and follow Infineon's gate resistor layout guide for the 6.6 mm clearance pad.
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Solar String Inverters
Three-phase string inverters in the 10-100 kW range use 1200 V IGBT or 1500 V SiC MOSFET bridges that the 1ED3124MU12HXUMA1 can drive directly from its 14 A peak output. The wide-body PG-DSO-8-66 package with >8 mm creepage supports the IEC 62109-1 reinforced insulation requirement between the LV control board and the PV bus without secondary isolation. Separate source and sink outputs let the designer tune turn-on (slower for EMI) and turn-off (fast for switching loss) independently, a critical optimization for SiC MOSFET bridges running >50 kHz. The 10.5 V UVLO matches 15 V auxiliary rails used in solar inverters. Estimated gate loss budget at 100 kHz with Qg=100 nC is 10 W per device, well within dissipation for a 4-layer FR4 PCB with copper pour.
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EV Traction Inverters and Onboard Chargers
The 1ED3124MU12HXUMA1 targets the high-voltage side of EV traction inverters and 800 V onboard chargers, where its 5.7 kV isolation and 1200 V continuous working voltage let it drive the upper switches of a three-phase IGBT bridge or SiC MOSFET half-bridge safely from the LV controller. The 14 A peak current is well matched to the Qg of 750 V/1200 V CoolSiC automotive modules in the 200-500 A class, eliminating an external bipolar totem-pole buffer. CMTI of 200 kV/us is robust against the dV/dt events of SiC MOSFETs switching at >50 kHz with 800 V bus, preventing false trigger of the complementary switch. The -40C to +125C operating range covers under-hood and on-chassis automotive environments.
추천
Uninterruptible Power Supplies (UPS)
Online UPS systems in the 10-500 kVA class use 1200 V IGBT stages for the rectifier, battery boost, and inverter sections, all of which the 1ED3124MU12HXUMA1 can drive from its 14 A output. The wide-body DSO-8 package's reinforced isolation meets UL 1778 and IEC 62040 safety requirements between the battery bus (typ. 384-768 VDC) and the LV control board. The 90 ns propagation delay allows sub-500 ns dead time in the bidirectional inverter, minimizing circulating losses. Separate source and sink pins allow asymmetric gate resistance to limit reverse recovery dV/dt in the IGBT bridge while preserving fast turn-off for switching loss reduction. Industrial temperature grade (-40C to +125C) suits UPS cabinet environments.
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Induction Heating and Welding Power Supplies
Induction heating and welding inverter power stacks operate at 20-100 kHz with 1200 V class IGBTs in series-resonant half-bridge or full-bridge topologies. The 1ED3124MU12HXUMA1's 14 A peak output drives these IGBTs directly without external bipolar buffers, and its 90 ns propagation delay enables the precise dead-time control needed to avoid cross-conduction in resonant-zero-voltage-switching topologies. The 10.5 V UVLO prevents partial turn-on of the IGBT during supply startup that could destroy the device. The wide-body package provides the creepage needed to meet IEC 60974-1 welding equipment safety standards at >600 V working voltage. Built-in short-circuit clamping protects the IGBT during transformer secondary short fault events.
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Three-Phase Servo Drives and Robotics
Industrial servo drives for CNC machines and robotics use 600-1200 V IGBT or SiC MOSFET bridges to drive the motor at variable frequency from 0-1500 Hz. The 1ED3124MU12HXUMA1 can be paired with Infineon's TRENCHSTOP IGBT7 modules for the latest servo platforms, and its 14 A drive current supports the regenerative braking transients that frequently exceed continuous current rating. The 5.7 kV isolation gives the designer freedom to place the driver on either the LV or HV side of the isolation barrier depending on grounding strategy. CMTI of 200 kV/us prevents false triggering when the motor generates inductive kickback dV/dt during emergency stop. The 14 A drive strength also supports parallel IGBT configurations for higher current servo stages up to 600 A continuous.
추천
SiC MOSFET Discrete Half-Bridge Stages
Discrete SiC MOSFET half-bridge stages in industrial test equipment, medical imaging, and aerospace motor drives benefit from the 1ED3124MU12HXUMA1's 14 A peak current and 200 kV/us CMTI. The fast switching edges of 1200 V SiC MOSFETs (typically 50-100 V/ns) demand a driver that can withstand high dV/dt without injecting common-mode noise back into the LV side, and the 200 kV/us CMTI rating comfortably handles these transients. Separate source and sink outputs let the designer add a small series gate inductance or ferrite bead to slow turn-on for EMI without sacrificing turn-off speed for switching loss. The driver is qualified for use with Infineon CoolSiC MOSFETs as well as third-party SiC discrete switches.
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추천 제품 요약
엔지니어링 참조 데이터: 1ED3124MU12HXUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 1ED3114MU12H | 1ED3134MU12H | 1EDI60N12AFXUMA1 | 1EDB7275FXUMA1 | 1EDN6550BXTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8-66 (wide-body DSO-8, >8 mm creepage) | PG-DSO-8-66 (wide-body DSO-8, same) | PG-DSO-8-66 (wide-body DSO-8, same) | PG-DSO-8-66 (wide-body DSO-8, same) | PG-DSO-8-66 (wide-body DSO-8, same) | PG-DSO-8-66 (wide-body DSO-8, same) |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | 5.7 kV (UL 1577) | 5.7 kV (UL 1577) | 5.7 kV | 3 kV (lower isolation class) | 1.5 kV (low-isolation class) |
| Working Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 650 V (lower voltage class) | 650 V (lower voltage class) |
| UVLO Threshold | 10.5 V | 10.5 V | 10.5 V | 10.5 V | 8 V | 8 V |
| Output Configuration | Separate source / sink | Single output + active Miller clamp | Separate source / sink | Single output with integrated DC-DC | Single output | Single output |
| Target Switch Class | Up to 2300 V IGBT / SiC | Up to 2300 V IGBT / SiC | Up to 2300 V IGBT / SiC | Up to 1200 V class | Up to 650 V class | Up to 650 V class |
| Unit Price (1 pc, as of 2026-09-13) | $1.64 | ~$1.55 (similar class) | ~$1.55 (similar class) | ~$3.20 (higher integration premium) | ~$1.40 (lower isolation class) | ~$0.95 (low-isolation entry level) |
주요 차별점
- Separate source and sink pins for independent gate path tuning (vs 1ED3114MU12H)
- 5.7 kV (rms) UL 1577 reinforced isolation (vs 1EDB7275FXUMA1)
- 14 A typical peak output current for direct drive of large modules (vs 1EDN6550BXTSA1)
설계 노트
Place 1 uF X7R 25 V ceramic bypass capacitors (Murata GRM31CR71E106KA12 or equivalent) within 2 mm of both VCC1 (pin 1) and VCC2 (pin 5), referenced to their respective GND pins. Add a 100 nF 50 V high-frequency decoupling cap in parallel to provide low impedance at >10 MHz switching frequencies. Keep the primary-side (GND1) and secondary-side (GND2) return paths separate and stitch them only at the driver IC's GND pins to avoid high-current secondary return currents flowing through the primary ground.
Estimated: at continuous 100 kHz switching with Qg = 100 nC and 12 V gate drive, gate driver loss is approximately P = Qg * Vg * f = 100 nC * 12 V * 100 kHz = 0.12 W per channel. With 4-layer FR4 PCB and >1 square inch of copper pour under the exposed thermal pad, theta_JA is approximately 60 C/W, giving a 7 C temperature rise. No heatsink is required under typical conditions, but the copper pour is mandatory. Verify junction temperature with thermal probe during worst-case characterization.
Do not connect IN+ and IN- together for inverting-only operation; always leave one as the active input and tie the other to VCC1 (non-inverting) or GND1 (inverting). Floating the unused input causes spurious switching due to noise pickup, especially in high dV/dt environments. Also, do not exceed the maximum VCC2 supply of 20 V; the driver does not tolerate negative transients on VCC2 during power-down sequencing - add a TVS clamp or Schottky diode from VCC2 to GND2 if the auxiliary supply is unregulated.
For SiC MOSFET bridges with >50 kHz switching, add a small ferrite bead or 10 ohm gate resistor on the OUT_S (source) pin only, to slow turn-on and reduce EMI without sacrificing turn-off speed. The OUT_SINK pin remains directly gated for the fastest possible turn-off. If designing for parallel IGBT modules, use individual gate resistors per device with the OUT_S and OUT_SINK outputs driving each device's gate independently, rather than paralleling the outputs at the driver pins.
규정 준수 정보
UL 1577 certified for 5.7 kV (rms) isolation per Infineon datasheet. Industrial grade (-40C to +125C); NOT AEC-Q100 qualified - for automotive designs, verify the specific Infineon part number suffix for automotive qualification. RoHS and REACH compliant per Infineon product page.
