1EDN7146GXTMA1 vs 2EDL8023GXUMA1 비교

다음의 상세 나란히 비교: 1EDN7146GXTMA1 제조: Infineon 및 2EDL8023GXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ 활성

사양 비교

파라미터 1EDN7146GXTMA1 2EDL8023GXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.05 $1.52
Driver Type High-side, single-channel —
Number of Drivers 1 2
Logic Type Non-Inverting —
Input Type TDI (Truly Differential Inductor) Non-inverting, TTL-compatible
Maximum Bootstrap Voltage (VB) 200 V —
Supply Voltage (VCC) 4.5 V to 20 V —
Source/Sink Drive Current 500 mA / 500 mA —
Gate Drive Voltage Up to 11 V (typ) —
Propagation Delay (typ) 40 ns [DATA_NEEDED: exact propagation delay ns from datasheet]
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
UVLO (VCC) Yes —
UVLO (VB) Yes —
Bootstrap Diode Integrated Integrated, 120 V rated
동작 온도 -40 C to +125 C -40C to +125C
패키지 PG-VSON-10-4 PG-VDSON-8-4 (DSO-8 with exposed thermal pad)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
MSL 레벨 1 [DATA_NEEDED: MSL rating]
Driver Configuration — Half-bridge (high-side + low-side)
Peak Source Current — 3 A
Peak Sink Current — 4 A
Maximum Bootstrap Voltage — 120 V
VCC Supply Range — 8 V to 17 V
Channel-to-Channel Delay Match — ±2 ns
Undervoltage Lockout (VCC) — Yes (internal)
Undervoltage Lockout (VBS) — Yes (internal)
Isolation Technology — Junction isolation

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청