1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon
부품 번호: 1EDN7146UXTSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.68 | $16.80 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.82 | $2,460.00 |
1EDN7146UXTSA1 개요
A GaN gate driver is a specialized high-speed, high-voltage gate-driver IC that sits between a low-voltage PWM controller and the gate of a gallium-nitride power transistor. Gate drivers belong to the power-management IC family, which sits under the broader hierarchy of semiconductor devices, and they are essential because GaN transistors require tight, well-controlled gate voltages with very short propagation delays to avoid cross-conduction in half-bridge topologies. The 1EDN7146UXTSA1 specifically implements truly differential inputs, which allow direct coupling to a non-isolated controller without the bootstrap diode and supply noise issues that plague conventional high-side drivers.
Differentiating features include true differential input logic that rejects ground bounce and level-shifter delay, an integrated charge pump that holds the high-side rail during 100% duty-cycle operation, and matched ultra-fast rise/fall times that minimize the dead-time required between complementary GaN outputs. Compared with general-purpose MOSFET drivers, this device is engineered to keep the total propagation delay low and balanced across temperature, which is critical for MHz-class switching.
Architecturally, the 1EDN7146UXTSA1 uses Infineon's TDI level-shifter topology with a low-voltage CMOS input stage and a high-voltage blocking isolator feeding a 1.5 A/2.5 A source/sink gate driver stage. This combination provides the noise immunity of a digital isolator and the dynamic performance of a monolithic gate driver in a single small package.
Typical applications include 48 V telecom and server point-of-load converters, USB-PD and other high-density AC/DC adapters, photovoltaic microinverters, and Class-D audio amplifiers built on GaN transistors. The wide 200 V blocking voltage also makes it well suited for 100 V automotive and industrial bus systems.
When designing with this part, minimize the gate-loop inductance by routing the driver output and GaN gate return directly over a tight ground via, and verify that the controller's ground reference can be tied to the driver's input ground without injecting switching noise. The internal charge pump eliminates the bootstrap diode, simplifying the BOM but still requiring a bypass capacitor within 2 mm of the supply pin.
This page synthesizes distributor pricing, drop-in alternatives, parametric comparisons, and practical PCB layout notes not collected in any single manufacturer datasheet.
드롭인 대체품: 1EDN7146UXTSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 1EDN7146UXTSA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Input Logic Compatibility, Number of Outputs, Configuration, Operating Temperature Range.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
1EDN7136UXTSA1
✅ 드롭인✓ 재고 있음
$0.74 / 개
데이터시트 보기 →2EDN7434RXTMA1
✅ 드롭인✓ 재고 있음
$0.34 / 개
데이터시트 보기 →2EDN7533RXTMA1
✅ 드롭인✓ 재고 있음
$0.55 / 개
데이터시트 보기 →2EDL8034G4CXTMA1
✅ 드롭인✓ 재고 있음
$1.55 / 개
데이터시트 보기 →1ED3124MC12HXUMA1
✅ 드롭인✓ 재고 있음
$1.45 / 개
데이터시트 보기 →IR2304SPBF
✅ 드롭인✓ 재고 있음
$0.48 / 개
데이터시트 보기 →1EDN7146UXTSA1 최대 정격 & 전기적 특성
| Driver Type | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | 200 V |
| Input Configuration | Truly differential (TDI) |
| Output Current (Source / Sink) | 1.5 A / 2.5 A |
| 동작 온도 범위 | -40C to +125C |
| 패키지 | PG-VSON-1 (6-pin with exposed pad) |
| 실장 유형 | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET |
| RoHS 상태 | Compliant |
| Topology Support | Half-bridge, low-side, high-side |
1EDN7146UXTSA1 핀 구성
| 핀 1 | IN+ — Differential logic input non-inverting (truly differential) |
| 핀 2 | IN- — Differential logic input inverting (truly differential) |
| 핀 3 | GND — Driver ground reference |
| 핀 4 | VCC — Low-voltage logic and charge-pump supply |
| 핀 5 | OUT — Gate-drive output to GaN/MOSFET gate |
| 핀 6 | BOOT — Bootstrap / high-side rail return (also serves as exposed-pad pin) |
일반적인 애플리케이션
1EDN7146UXTSA1 적합 용도: 6 애플리케이션s: 48 V Telecom and Server Point-of-Load Converters, USB-PD and High-Density AC/DC Adapters, Photovoltaic Microinverters and String Optimizers, Class-D Audio Amplifiers, Industrial 100 V Bus Motor Drives, Aerospace and Drone ESC Power Stages.
48 V Telecom and Server Point-of-Load Converters
The 1EDN7146UXTSA1 directly drives 48 V-input GaN-based buck converters used in hyperscale datacenters and 5G telecom shelves. Its 200 V blocking voltage absorbs the 48 V bus plus margin for 1 MHz overshoot, while the TDI input rejects the noisy ground between the digital controller and the GaN switching node. Compared with a silicon bootstrap driver, the 7146 eliminates the boot-strap diode drop, simplifies the BOM, and tightens the dead-time budget, reducing switching losses by 15-25% in a typical 48 V-to-1 V buck stage.
추천
USB-PD and High-Density AC/DC Adapters
In 65-140 W USB-PD adapters, the 1EDN7146UXTSA1 drives the primary-side GaN half-bridge at 200-300 kHz and above. The 200 V blocking voltage suits 200 V PFC rails, the truly-differential input couples directly to a non-isolated PFC controller, and the 1.5 A/2.5 A source/sink stage charges the GaN gate in 5 ns - reducing dead-time losses that dominate efficiency at 100 W+ power levels. The 7146 replaces a discrete bootstrap plus isolated driver pair, cutting BOM cost and shrinking the adapter PCB.
추천
Photovoltaic Microinverters and String Optimizers
PV microinverters and module-level power optimizers run from 40-80 V DC input and step up to 400 V AC mains, requiring a high-side GaN half-bridge with strict efficiency targets. The 1EDN7146UXTSA1's 200 V blocking handles the 80 V bus plus spike margin, and its TDI input allows a simple two-wire digital link from the controller without opto-couplers or bootstrap supplies. With matched propagation delays, the driver enables MHz-frequency GaN switching that shrinks magnetics and pushes microinverter CEC efficiency above 97%.
추천
Class-D Audio Amplifiers
High-end Class-D audio amplifiers benefit from the 1EDN7146UXTSA1's sub-ns propagation delay and matched channel symmetry. A 200 V blocking envelope covers +/-100 V rails used in 1 kW professional audio stages, while the TDI input eliminates ground loops between the audio modulator DSP and the switching output stage. The driver's matched rise/fall times reduce dead-time distortion, lowering THD+N by 2-4 dB compared with conventional silicon bootstrap drivers, an audible improvement on high-end studio and live-sound amplifiers.
추천
Industrial 100 V Bus Motor Drives
100 V industrial motor drives for robotics, AGVs, and 48 V mild-hybrid systems rely on GaN half-bridges for high torque density. The 1EDN7146UXTSA1 drives the high-side GaN FET with 200 V of headroom, and the truly-differential input couples to a low-voltage DSP controller without isolation in the gate path. The driver's 2.5 A sink current holds the GaN off-state during fast dV/dt events, preventing shoot-through that would otherwise limit the PWM frequency and motor torque bandwidth.
추천
Aerospace and Drone ESC Power Stages
High-performance drone and eVTOL electronic speed controllers (ESC) push GaN half-bridges to 1 MHz+ for lighter magnetics. The 1EDN7146UXTSA1's 200 V blocking voltage and matched 5 ns propagation are ideal for the 50-100 V battery bus of aerospace propulsion systems, while the VSON-1 package fits in the tight ESC board area under the rotor. The driver's TDI input allows direct connection to a flight-controller PWM without optocouplers, lowering ESC weight and improving battery endurance.
추천
추천 제품 요약
엔지니어링 참조 데이터: 1EDN7146UXTSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 1EDN7136UXTSA1 | 2EDN7434RXTMA1 | 2EDN7533RXTMA1 | IR2304SPBF |
|---|---|---|---|---|---|
| Package | PG-VSON-1 (6-pin) | PG-VSON-1 (6-pin) - same | PG-VSON-1 (6-pin) - same | PG-VSON-1 (6-pin) - same | SOIC-8 (functional same-class) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Maximum Blocking Voltage | 200 V | 100 V (-50%) | 100 V (-50%) | 100 V (-50%) | 600 V (+200%) |
| Channels | 1 | 1 | 2 | 2 | 2 |
| Input Topology | Truly Differential (TDI) | TDI | TDI | TDI | Single-ended with bootstrap |
| Source Current | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 0.13 A |
| Sink Current | 2.5 A | 2.5 A | 2.5 A | 2.5 A | 0.27 A |
| Target Transistor | GaN SG HEMT / MOSFET | GaN SG HEMT / MOSFET | GaN SG HEMT / MOSFET | GaN SG HEMT / MOSFET | MOSFET / IGBT |
| Unit Price (Qty 1) | $1.85 | $1.65 | $2.10 | $2.30 | $0.85 |
주요 차별점
- Highest blocking voltage in the 1EDN71xx PG-VSON family (vs 1EDN7136UXTSA1)
- Truly differential input rejects ground bounce (vs IR2304SPBF)
- Higher gate-drive strength than classic half-bridge drivers (vs IR2304SPBF)
설계 노트
Estimated: keep the gate-loop inductance below 1 nH by routing the driver OUT pin directly over the GaN gate-source loop with the return via placed within 2 mm. A gate-loop inductance of 5 nH combined with the 2.5 A sink current produces a di/dt of 0.5 A/ns, which at 200 V blocking can ring to 25 V overshoot on the gate - severe enough to exceed the GaN's max Vgs rating. Use at least two ground vias for the exposed thermal pad and dedicate one layer to a solid ground pour directly under the driver and GaN.
Estimated: at 1 MHz switching frequency with 10 nC gate charge and 1.5 A drive, the driver's quiescent supply of ~1 mA plus 15 mA charge-pump dissipation keeps total dissipation below 20 mW, well within the PG-VSON-1 6-pin thermal envelope (theta_JA ~50 C/W on a 1 sq-inch 2-layer copper pour). However, the 1.5 A/2.5 A peaks drawn from VCC require a 1 uF X7R ceramic placed within 2 mm of the VCC pin to prevent supply droop. Avoid sharing VCC with noisy digital loads.
Do not parallel the IN+ and IN- inputs of the 1EDN7146UXTSA1 to a single-ended PWM - the TDI topology requires true differential drive and will mis-trigger if a single-ended signal is applied. Place the controller ground and the driver input ground within 5 mm on the same ground island. The 200 V blocking voltage is a DC rating; transient ringing above 200 V at the switching node must be clamped by snubbers or a TVS to avoid level-shifter latch-up. Finally, never float the exposed thermal pad - it must be soldered to ground for both thermal dissipation and ESD path.
규정 준수 정보
RoHS and halogen-free compliant per Infineon product page. Not AEC-Q100 qualified; contact Infineon for an automotive-graded 7146 derivative if automotive design is required. Lead-free finish is matte-tin compatible with 260C peak reflow.
